Matsushita Electric Industrial Co., Ltd.

Keisuke Shimamoto

Mamoru Soga

Tohru Nakagawa

Kenji Tomita

Makio Nobayashi

The ink-jet head of this invention includes a nozzle plate in which a nozzle is formed; a pressure chamber part in which a pressure chamber charged with an ink is formed; an ink passage part in which an ink supplying passage for supplying the ink to the pressure chamber is formed; a piezoelectric actuator for applying a pressure to the pressure chamber for discharging the ink from the nozzle; a damper wall for separating the ink supplying passage from an air chamber; and a communicating hole for communicating the air chamber with the atmospheric air.

Ink-jet head and recording apparatus

A coat liquid, in which a methoxysilane or ethoxysilane compound which is a precursor of silicon oxide and an ethoxysilane or methoxysilane compound which contains therein a carbon fluoride chain are dissolved, is applied onto the surface of a base material of SUS having a thickness of 20 &#x3bc;m. This is followed by drying the base material for one hour at room temperature condition. Thereafter, the base material is baked at 200 degrees centigrade for 30 minutes thereby to form a water repellent thin film having a thickness of from 10 nm to 1000 nm and containing therein a molecule in which fluoroalkyl chains are bonded to the silicon oxide. A nozzle orifice is formed by electrical discharge machining from the lower side of the base material.

Ink jet head and method for the manufacture thereof

A coat liquid, in which a methoxysilane or ethoxysilane compound which is a precursor of silicon oxide and an ethoxysilane or methoxysilane compound which contains therein a carbon fluoride chain are dissolved, is applied onto the surface of a base material of SUS having a thickness of 20 &mgr;m. This is followed by drying the base material for one hour at room temperature condition. Thereafter, the base material is baked at 200 degrees centigrade for 30 minutes thereby to form a water repellent thin film having a thickness of from 10 nm to 1000 nm and containing therein a molecule in which fluoroalkyl chains are bonded to the silicon oxide. A nozzle orifice is formed by electrical discharge machining from the lower side of the base material.

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Kumamoto, Japan

Keisuke Shimamoto