Kabushiki Kaisha Toyota Chuo Kenkyusho

Denso Corporation

Showa Denko K.k.

Keisuke Shigetoh

Yasushi Urakami

Itaru Gunjishima

Masakazu Kobayashi

Nobuhiko Muramoto

Ayumu Adachi

Masanori Yamada

Daisuke Nakamura

Ryoji Asahi

Shin Tajima

Akihiro Matsuse

Akitoshi Suzumura

Shougo Higashi

Kazutaka Nishikawa

Atsushi Beniya

An inorganic structure body has a free-standing structure including a fibrous member and/or a shell. The fibrous member and/or the shell include a metal and/or an inorganic material and have a three-dimensionally continuous configuration. The free-standing structure may have a structure that is based on a nonwoven fabric or a porous membrane used as a substrate.

Inorganic structure body, device, and method for manufacturing inorganic structure body

A seed crystal for SiC single-crystal growth includes a facet formation region containing a {0001}-plane uppermost portion and n (n&#x3e;=3) planes provided enclosing the periphery of the facet formation region. The seed crystal for SiC single-crystal growth satisfies the relationships represented by formula (a): B&#x3c;=cos(sin(2.3 degrees)/sin C), formula (b): B&#x3c;=cos(sin(2.3 degrees)/sin C), and formula (c): min(C)&#x3c;=20 degrees. In the formulas, Cis an offset angle of a k-th plane, Bis an angle defined by an offset downstream direction of the k-th plane and a (k&#x2212;1)-th ridge line, and Bis an angle defined by the offset downstream direction of the k-th plane and a k-th ridge line.

Seed crystal for SiC single-crystal growth, SiC single crystal, and method of manufacturing the SiC single crystal

A high heat-resistant member includes a graphite substrate including isotropic graphite and a carbide coating film including a carbide, such as tantalum carbide, and covering a surface of the graphite substrate, the carbide coating film having a randomly oriented isotropic grain structure in which crystallites having a size indexed by a full width at half maximum of a diffraction peak of an X-ray diffraction pattern of not more than 0.2&#xb0; from (111) planes are accumulated at substantially random. The orientation of the carbide coating film is determined by whether degree of orientation (F) in any Miller plane calculated based on an XRD pattern using the Lotgering method is within a range from &#x2212;0.2 to 0.2.

High heat-resistant member, method for producing the same, graphite crucible and method for producing single crystal ingot

When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single crystal is carried out so that a ratio S(=S&#xd7;100/S) of an area (S) of a Si-plane side facet region to a total area (S) of the growth plane is maintained at 20% or less.

SiC single crystal, production method therefor, SiC wafer and semiconductor device

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Nagoya, Japan

Keisuke Shigetoh