Micron Technology Incorporated

Keisuke Otsuka

Tsuyoshi Tomoyama

Akira Kaneko

Methods for forming openings in conductive layers and using the same are described. An example method includes: forming a conductive layer; forming a first hard mask on the conductive layer; forming a second hard mask on the first hard mask; providing an opening through the first and second masks; and removing a surface of the conductive layer under the opening. The first hard mask may have hardness greater than hardness of the second hard mask.

Methods for forming openings in conductive layers and using the same

An apparatus includes: a substrate; a plurality of pillar-shaped bottom electrodes provided over the substrate; and an upper electrode covering side and top surfaces of the pillar-shaped bottom electrodes with an intervening capacitor insulating film therebetween; wherein the pillar-shaped bottom electrodes have at least an upper portion and a lower portion, and the diameter of the upper portion is smaller than the diameter of the lower portion.

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Kasaoka, Japan

Keisuke Otsuka