Toppan Printing Co., Ltd.

Keisuke Ogata

Kenzo Fukuyoshi

Tadashi Ishimatsu

Mitsuhiro Nakao

Satoshi Kitamura

Akiko Uchibori

A method of manufacturing a solid state image pickup device including photoelectric conversion elements which are two-dimensionally arranged in a semiconductor substrate, and a color filter having a plurality of color filter patterns differing in color from each other and disposed on a surface of the semiconductor substrate according to the photoelectric conversion elements. The method including the steps of successively subjecting a plurality of filter layers differing in color from each other to a patterning process to form the plurality of color filter patterns. At least one color filter pattern to be formed at first among the plurality of color filter patterns is formed by means of dry etching, and the rest of the plurality of the color filter pattern is formed by means of photolithography.

Solid state image pickup device and manufacturing method thereof

A solid state imaging device including photoelectric conversion devices which are arranged two-dimensionally; a color filter including a plurality of picture elements, each disposed corresponding to each of the photoelectric conversion devices; and a plurality of transfer lenses each disposed corresponding to each of the picture elements, formed of a thermoset acrylic resin, and formed directly on each of the picture elements, wherein a gap between neighboring transfer lenses is not more than 0.035 &#x3bc;m, and a contact length between neighboring transfer lenses is within the range of 3-80% of the pitch of the plurality of transfer lenses.

Solid state imaging device, manufacturing method of the same, and substrate for solid state imaging device

A method of manufacturing a solid state image pickup device including photoelectric conversion elements which are two-dimensionally arranged in a semiconductor substrate, and a color filter having a plurality of color filter patterns differing in color from each other and disposed on a surface of the semiconductor substrate according to the photoelectric conversion elements. The method includes successively subjecting a plurality of filter layers differing in color from each other to a patterning process to form the plurality of color filter patterns. At least one color filter pattern to be formed at first among the plurality of color filter patterns is formed by dry etching, and the rest of the plurality of the color filter pattern is formed by photolithography.

Manufacturing method for solid state image pickup device

A method of manufacturing a solid state imaging device having photoelectric conversion devices, the method including: 1) forming a plurality of color filters differing in color from each other, 2) forming a transparent resin layer on the color filters, 3) forming an etching control layer on the transparent resin layer, the etching control layer being enabled to be etched at a different etching rate from the etching rate of the transparent resin layer, 4) forming a lens master on the etching control layer by using a heat-flowable resin material, 5) transferring a pattern of the lens master to the etching control layer by dry etching to form an intermediate micro lens, and 6) transferring a pattern of the intermediate micro lens to the transparent resin layer by dry etching to form the transfer lenses.

A solid-state imaging device includes a plurality of two-dimensionally arranged photo diodes and a plurality of microlenses having substantially hemispherical shapes which cover the respective photo diodes. The microlens has a multilayer structure including at least a transparent resin upper layer which forms at least a portion of the substantially hemispherical shape, and a colored lower layer provided on a portion of the transparent resin upper layer which is located above the photo diode, with an interface between the colored lower layer and the transparent resin upper layer having a shape conforming to a surface of the photo diode.

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Tokyo, Japan

Keisuke Ogata