Shin-etsu Chemical Co., Ltd.

International Business Machines Corporation

Shin-etsu Chemical C O., Ltd.

Keisuke Niida

Tsutomu Ogihara

Takashi Sawamura

Takeru Watanabe

Seiichiro Tachibana

Daisuke Kori

Hiroko Nagai

Jun Hatakeyama

Rudy J Wojtecki

Daniel Sanders

Motoaki Iwabuchi

Gregory Breyta

Yasuyuki Yamamoto

Alexander Edward Hess

Koji Hasegawa

Osamu Watanabe

Toshiharu Yano

Takayoshi Nakahara

Naoki Kobayashi

Yusuke Kai

Daniel Paul Sanders

The present invention is a composition for forming a silicon-containing resist underlayer film, containing one or both of a hydrolysis product and a hydrolysis condensate of one or more silicon compounds (A-1) shown by the following general formula (1). This provides: a composition for forming a silicon-containing resist underlayer film with which it is possible to form a resist underlayer film having favorable adhesiveness to resist patterns regardless of whether in negative development or positive development, and also having favorable adhesiveness to finer patterns as in EUV photo-exposure; a patterning process; and a silicon compound.

Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound

The present invention provides a coating-type composition for forming an organic film containing: a polymer having a structure shown by the following general formula (1) as a partial structure; and an organic solvent, where in the formula (1), ring structures Ar1 and Ar2 represent a benzene ring or a naphthalene ring optionally having a substituent, and Wrepresents an aryl group having 6 to 30 carbon atoms and optionally having a substituent. This provides a coating-type composition for forming an organic film that can form an organic film having high pattern-curving resistance and high dry-etching resistance, the composition being excellent in solvent solubility and having a low generation of defects.

Coating-type composition for forming organic film, patterning process, polymer, and method for manufacturing polymer

A material for forming an organic film, including: a compound for forming an organic film shown by the following general formula (1A); and an organic solvent, where Wrepresents a tetravalent organic group, n1 an integer of 0 or 1, n2 an integer of 1 to 3, and Ran alkynyl group having 2 to 10 carbon atoms. A compound for forming an organic film is cured not only under air, but also under film formation conditions of inert gas, and forms an organic film having not only excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but also favorable adhesion to a substrate, and a material for forming an organic film containing the compound, and a substrate for manufacturing a semiconductor device using the material, a method for forming an organic film using the material, and a patterning process using the material.

Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film

A material for forming an organic film, including: a polymer having a structure shown by the following general formula (1A) as a partial structure; and an organic solvent, where in the general formula (1A), W1 represents a tetravalent organic group, W2 represents a single bond or a linking group shown by the following formula (1B), R1 represents a hydrogen atom or a monovalent organic group having 1 to 10 carbon atoms, n1 represents an integer of 0 or 1, and n2 and n3 satisfy 0≤n2≤6,0≤n3≤6, and 1≤n2+n3≤6, and where R2 and R3 each independently represent hydrogen or an organic group having 1 to 30 carbon atoms, and the organic group R2 and the organic group R3 optionally bond to each other within a molecule to form a cyclic organic group.

Material for forming organic film, patterning process, and polymer

An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air, generates no by-product and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate. The present invention provides a material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A) or (1B); and (B) an organic solvent, noting that in the general formula (1A), when Wrepresents any of Rdoes not represent any of

A material for forming an organic film using a polymer including an imide group for forming an organic underlayer film that cures under film-forming conditions in the air and in an inert gas, generates no by-product in heat resistance and embedding and flattening characteristics of a pattern formed on a substrate, also adhesiveness to a substrate for manufacturing a semiconductor apparatus, a method for forming an organic film, and a patterning process. The material includes (A) a polymer having a repeating unit represented by the following general formula (1A) whose terminal group is a group represented by either of the following general formulae (1B) or (1C), and (B) an organic solvent: wherein, Wrepresents a tetravalent organic group, and Wrepresents a divalent organic group: wherein, Rrepresents any of the groups represented by the following formula (1D), and two or more of Rs may be used in combination. 

Material for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, and patterning process

A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1) as a repeating unit, and an organic solvent. Each of AR1 and AR2 represents a benzene ring or naphthalene ring which optionally have a substituent; Wrepresents a particular partial structure having a triple bond, and the polymer optionally contains two or more kinds of W; and Wrepresents a divalent organic group having 6 to 80 carbon atoms and at least one aromatic ring. This invention provides: a polymer curable even under film formation conditions in an inert gas and capable of forming an organic film which has not only excellent heat resistance and properties of filling and planarizing a pattern formed in a substrate, but also favorable film formability onto a substrate with less sublimation product; and a composition for forming an organic film, containing the polymer. 

Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and polymer

An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate, and a material for forming an organic film containing the compound. A material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent,   

A compound including two or more partial structures shown by the following general formula (1-1) in the molecule,  wherein each Ar independently represents an aromatic ring optionally having a substituent or an aromatic ring that contains at least one nitrogen atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with an organic group; B represents an anionic leaving group that is capable of forming a reactive cation due to effect of either or both of heat and acid. This provides a compound that is capable of curing under the film forming conditions in air or an inert gas without forming byproducts, and forming an organic under layer film that has good dry etching durability during substrate processing not only excellent characteristics of gap filling and planarizing a pattern formed on a substrate.

Compound, composition for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, and patterning process

The invention provides a composition for forming an organic film, which generates no by-product even under such a film formation condition in an inert gas to prevent substrate corrosion, which is capable of forming an organic film not only excellent in properties of filling and planarizing a pattern formed on a substrate but also favorable for dry etching resistance during substrate processing, and further which causes no fluctuation in film thickness of the film due to thermal decomposition even when a CVD hard mask is formed on the organic film. The composition for forming an organic film includes (A) a polymer having a repeating unit shown by the following general formula (1) and (B) an organic solvent. 

Composition for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, patterning process, and polymer

A compound shown by the following general formula (1-1), AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; 'p' is 1 or 2; 'q' is 1 or 2; &#x201c;r&#x201d; is 0 or 1; &#x201c;s&#x201d; is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.

Compound and composition for forming organic film

Polymer and composition for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, and patterning process

The present invention provides an adhesive film including a resin having a silsesquioxane in a side chain and a urethane bond in a main chain, together with a method for forming the same. The inventive adhesive film has excellent stretchability and strength, with the film surface having higher adhesion and thinner film thickness.

Adhesive film, method for forming an adhesive film, and urethane polymer

The present invention provides a bio-electrode composition including: a resin containing a urethane bond in a main chain and a silsesquioxane in a side chain; and an electro-conductive material, wherein the electro-conductive material is a polymer compound having one or more repeating units selected from fluorosulfonic acid salts shown by the following general formulae (1)-1 and (1)-2, sulfonimide salts shown by the following general formula (1)-3, and sulfonamide salts shown by the following general formula (1)-4. This can form a living body contact layer for a bio-electrode that is excellent in electric conductivity and biocompatibility, light in weight, manufacturable at low cost, and free from large lowering of the electric conductivity even when it is wetted with water or dried. The present invention also provides a bio-electrode in which the living body contact layer is formed from the bio-electrode composition, and a method for manufacturing the bio-electrode. 

Bio-electrode composition, bio-electrode, and method for manufacturing bio-electrode

A compound includes two or more structures shown by the following general formula (1-1) in the molecule, 'Ar' represents an aromatic ring or one that contains at least one nitrogen atom and/or sulfur atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with Y; Y represents a divalent or trivalent organic group having 6 to 30 carbon atoms that contains an aromatic ring or a heteroaromatic ring optionally having a substituent, the bonds of which are located in a structure of the aromatic ring or the heteroaromatic ring; R represents a hydrogen atom or a monovalent group having 1 to 68 carbon atoms. This compound can be cured even in an inert gas not only in air atmosphere without forming byproducts, and can form an organic under layer film.

Growing community of inventors

Joetsu, Japan

Keisuke Niida