Kabushiki Kaisha Toshiba

Other

Ricoh Company, Ltd.

Toshiba Memory Corporation

Infineon Technologies Ag

Keisuke Nakazawa

Koji Yamakawa

Katsuaki Natori

Hiroshi Itokawa

Hiroyuki Kanaya

Osamu Arisumi

Soichi Yamazaki

Takeshi Hoshi

Chiaki Hatsuta

Norihito Ito

Yuto Shibata

Naoya Hayashi

Kazuaki Iwasawa

Toshiaki Motonaga

Toru Ogawa

Takahiro Matsuo

Akiko Kitayama

Shogo Matsuo

Toshio Onodera

Ichiro Mizushima

Katsuyuki Sekine

Takashi Nakao

Masahiro Kiyotoshi

Keitaro Imai

Daisuke Okada

Yoshinori Kumura

Shinichi Nakao

Hiroshi Mohri

Atsuko Kawasaki

Yuka Saito

Junji Fujikawa

Hiroya Uruta

Tetsuya Kai

Bum-Ki Moon

Ryu Kato

Katsuhiko Tachibana

Chan Gu

In one embodiment, a spin coating apparatus includes a coating liquid feeding module to drop a coating liquid onto a substrate, and a motor to rotate the substrate. The module drops a first drop amount of the coating liquid onto the substrate at a first discharge rate, while the motor rotates the substrate at a first number of rotations. The module drops a second drop amount of the coating liquid onto the substrate at a second discharge rate larger than the first discharge rate, while the motor rotates the substrate at a second number of rotations smaller than the first number of rotations, after the first drop amount of the coating liquid is dropped. The module discharges the coating liquid onto the substrate at a third discharge rate smaller than the second discharge rate, after the coating liquid is discharged onto the substrate at the second discharge rate.

Spin coating apparatus and method

An information processing system includes a first information processing device and a second information processing device that operates based on a request received from the first information processing device. The first information processing device includes a processor configured to implement a storage unit that stores a portion of information stored in the second information processing device, and a first communication control unit that transmits a job execution request to the second information processing device based on the stored information. When a communication connection between the first and second information processing devices is not established, the transmission of the job execution request is controlled to transmit the job execution request based on the portion of the information after the communication connection is established. The second information processing device executes a predetermined job based on the job execution request received from the first information processing device.

Information processing system, information processing apparatus, information processing method, and information processing program

A spin coating method according to an embodiment includes forming a first material film on an underlying material. The underlying material is rotated while a solution of a second material film is supplied onto an upper surface of the first material film to make the solution stay on the upper surface of the first material film. Rotating of the underlying material is stopped or a rotational speed of the underlying material is reduced to 10 rpm or less. The underlying material is rotated after a first period elapses after the stopping of the rotating of the underlying material, or the rotational speed of the underlying material is increased after the first period elapses after the reducing of the rotational speed of the underlying material to spin off the solution from the upper surface of the first material film.

Spin coating method and manufacturing method of electronic component

An information processing system includes a first information processing apparatus and a second information processing apparatus. The first information processing apparatus includes an acquisition part creating a first information request, a first transmitter transmitting the first information request to the second information processing apparatus, a first receiver receiving the first information from the second information processing apparatus, a display controller controlling displaying the first information, and a first storage storing second information, the display controller controlling displaying the second information when the second information is stored in the first storage. The second information processing apparatus includes a second storage storing the first information, a second receiver receiving the first information request, an extracting part extracting the first information from the second storage in response to the first information request, and a second transmitter transmitting the first information to the first information processing apparatus.

Information processing system, information processing apparatus, information processing method, and recording medium

In one embodiment, a method of manufacturing a semiconductor device includes forming a pattern portion and a flat portion on a substrate, the pattern portion including plural patterns, and the flat portion having a flat surface at a position lower than upper surfaces of the patterns. The method further includes transferring a first film on the substrate to continuously form the first film on the upper surfaces of the patterns and on the flat surface of the flat portion and to form a first air gap between the patterns.

Method of manufacturing semiconductor device including air gap between patterns

According to an embodiment, a method for manufacturing a semiconductor device includes transferring a continuous second layer, forming a third layer, and removing the second layer. The second layer is transferred onto a first layer. The first layer has a first opening. The second layer covers the first opening to form a first air gap. The third layer is formed on the first layer. The third layer has a second opening. The second opening is positioned on the first air gap. The second layer is removed through the second opening.

Method of making openings in a semiconductor device with reduced residue by transferring layers

According to one embodiment, a method of manufacturing a semiconductor device includes providing a substrate, supplying a first liquid including a terpene to a surface of the substrate, supplying a second liquid including a silicon-containing compound to the surface of the substrate, and converting the silicon-containing compound to a silicon oxide compound.

Manufacturing method of semiconductor device and manufacturing apparatus of semiconductor device

According to one embodiment, a method of manufacturing a semiconductor device is provided. In the method, a tunnel insulating film and a first conductive film are formed on a semiconductor layer. A trench is formed. A first sacrifice film is buried in the trench. A second sacrifice film having density higher than that of the first sacrifice film is formed on the first sacrifice film in the trench. An insulating film is formed on the first conductive film and the second sacrifice film. A second conductive film is formed on the insulating film. The second sacrifice film is exposed. The first sacrifice film and the second sacrifice film are removed.

Method of manufacturing semiconductor device

According to one embodiment, a semiconductor device includes a semiconductor substrate, a trench formed in an element isolating area of the semiconductor substrate, and a silicon oxide film that is embedded in the trench and contains an alkali metal element or alkali earth metal element.

Semiconductor device

A spin coating apparatus that supplies a coating liquid to a substrate and rotating the substrate to form a coating film, has a holding part that holds the substrate mounted thereon in a horizontal position; a rotationally driving source that rotationally drives the holding part about a rotational axis parallel with the vertical direction, thereby rotating the substrate; and a coating liquid supplying part that supplies the coating liquid to the substrate held by the holding part.

Spin coating method and spin coating apparatus

According to one embodiment, there is provided a method of manufacturing a semiconductor device. In the method, a substrate portion and a fin portion on the substrate portion are formed. A first silicon oxide film is formed on each side surface of the fin portion. A polysilazane film having an upper surface lower than the upper surface of the first silicon oxide film is formed on each side surface of the first silicon oxide film. The polysilazane film is converted into a silicon oxynitride film. The first silicon oxide film is etched to make the upper surface of the first silicon oxide film not higher than the upper surface of the silicon oxynitride film. A heavily doped semiconductor layer is formed in the fin portion.

Semiconductor device and method of manufacturing the same

In one embodiment, a method of manufacturing a semiconductor device includes forming an isolation trench in a substrate, and forming an amorphous layer on a sidewall surface of the isolation trench. The method further includes forming a sacrificial layer in the isolation trench via the amorphous layer, and forming an air gap layer on the sacrificial layer. The method further includes forming an air gap in the isolation trench under the air gap layer by removing the sacrificial layer after forming the air gap layer.

In accordance with an embodiment, a semiconductor device includes a functional film, first and second trenches, and first and second insulating films. The functional film comprises first and second areas. The first trench is provided in the first area of the functional film and has a first width. The second trench is provided in the second area of the functional film and has a second width larger than the first width. The first insulating film is formed from a polymeric material as a precursor to fill the first trench. The second insulating film has a diameter larger than the first width and is formed from particulates and the polymeric material as precursors. The particulates fill the second trench. The polymeric material fills spaces between the particulates in the second trench and also fills gaps between the particulates and the second trench.

Semiconductor device and manufacturing method thereof

A method for manufacturing semiconductor device has forming a plurality of trenches having at least two kinds of aspect ratios on a semiconductor substrate, filling the plurality of trenches with a coating material containing silicon, forming a mask on the coating material in a part of the trenches among the plurality of trenches filled with the coating material, implanting an ion for accelerating oxidation of the coating material into the coating material in the trenches on which the mask is not formed, forming a first insulating film by oxidizing the coating materials into which the ion is implanted, removing the coating material from the part of the trenches after removing the mask and forming a second insulating film in the part of the trenches from which the coating material is removed.

Growing community of inventors

Yokohama, Japan

Keisuke Nakazawa