Nissan Chemical Industries Limited

Keisuke Nakayama

Takahiro Kishioka

Rikimaru Sakamoto

Tomoyuki Enomoto

Ken-ichi Mizusawa

Yoshiomi Hiroi

Yasuo Kawamura

Takaichi Sugiyama

Jun Uchida

Yuhji Sudoh

Shinya Arase

Makoto Takakura

Hiroyuki Uehara

Yuko Furuya

There is provided a composition for forming anti-reflective coating containing a urea compound substituted by hydroxyalkyl group or alkoxyalkyl group, and preferably a light absorbing compound and/or a light absorbing resin; a method of forming a anti-reflective coating for a semiconductor device by use of the composition; and a process for manufacturing a semiconductor device by use of the composition. The composition according to the present invention exhibits a good light-absorption to a light having a wavelength used for manufacturing a semiconductor device. Therefore, the composition exerts a high protection effect against light reflection, and has a high dry etching rate compared with photoresist layers.

Composition for forming anti-reflective coat

There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.

Composition for forming anti-reflective coating for use in lithography

There is provided an anti-reflective coating forming composition for lithography comprising a reaction product obtained by reacting a sulfur-containing compound having thiourea structure with a nitrogen-containing compound having two or more nitrogen atoms substituted with a hydroxymethyl group or an alkoxymethyl group in the presence of an acid catalyst and a solvent. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, has a higher dry etching rate compared with photoresists and can use in lithography process for manufacturing semiconductor device.

Sulfur atom-containing anti-reflective coating forming composition for lithography

There is provided an anti-reflective coating forming composition comprising a solid content and a solvent, wherein a proportion of sulfur atom in the solid content is 5 to 25 mass %. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, and can use in lithography process by use of a light having a short wavelength such as F2 excimer laser beam (wavelength 157 nm) or ArF excimer laser beam (wavelength 193 nm), etc.

Anti-reflective coating containing sulfur atom

Process for preparing an aqueous solution of sulfanilic acid modified melamine-formaldehyde resin and a cement composition

Amino resin composition

Growing community of inventors

Nei-gun, Japan

Keisuke Nakayama