Sharp Kabushiki Kaisha Corporation

Keisuke Miyazaki

Taiji Morimoto

Yoshinori Ohitsu

Kazuhiko Wada

Toshio Hata

Yoshihisa Fujii

Masaki Tatsumi

Takashi Ishizumi

Zenkichi Shibata

Yoshiaki Ueda

Shin Itoh

Light emission efficiency is increased in an eye-safe light source by regulating light distribution properties. An eye-safe light source includes a package, a semiconductor laser that emits laser light from a left light emission end surface and a right light emission end surface, and a wire that is joined to the semiconductor laser. The semiconductor laser is joined to the package such that the laser light is emitted parallel to an upper surface of a lead frame of the package. The package includes reflection surfaces that face the left light emission end surface and the right light emission end surface and reflect the laser light. In top view, a direction in which the wire extends is perpendicular to a direction of emission of the laser light.

Eye-safe light source

A semiconductor laser device including a submount having a front surface and a back surface corresponding to the opposing face that are in parallel with each other and a visible light transmittance of 60% or more; a connection electrode that is formed on the front surface; and a semiconductor laser element that is packaged on the submount through the connection electrode, and is allowed to emit a laser beam in a direction parallel to the front surface.

Semiconductor laser device and method for manufacturing the same

A light confinement layer constructed of a semiconductor that has a refractive index different from that of p-type second cladding layers is formed to a small film thickness of not greater than 2 &#x3bc;m (about 0.5 &#x3bc;m) on the whole surface of ridge portions of two semiconductor lasers. Thus, the light confinement layer on the ridge portions is made roughly flat so as to be easily removable by etching. As a result, the exposure of p-type second cladding layers of the ridge portions due to deep etching is prevented to allow the confinement of light into the p-type cladding layers to be stably effected. A dielectric film is formed on the light confinement layer and reinforces the current constriction function lost by the reduction in the thickness of the light confinement layer.

Semiconductor laser device and manufacturing method therefor

An AlGaAs-based semiconductor laseris formed on an n-type GaAs substrateand thereafter etching is carried out until reaching an n-type AlGaAs clad layerfrom the surface. Next, the n-type AlGaAs clad layeris removed by etching with an etchant having selectivity to GaAs. Subsequently, the surface of an n-type GaAs buffer layeris lightly etched. Thus, the n-type GaAs buffer layerof the AlGaAs-based semiconductor laseris left in a slightly abraded state on the n-type GaAs substratemaintaining the flatness of the groundwork layer during growing an AlGaInP-based semiconductor laserat the second time. Therefore, the flatness of the crystals of, in particular, an active layer grown at the second time can be improved, and the poor characteristics of the AlGaInP-based semiconductor laserattributed to the poor flatness of the groundwork can be improved.

Semiconductor laser device having a multi-layer buffer layer

There is provided a semiconductor laser device having on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, the plurality of laser portions containing different types, respectively, of dopant. There is also provided a method of fabricating a semiconductor laser device, forming on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, initially forming a laser portion in a crystal growth method and subsequently forming another laser portion in a different crystal growth method.

Semiconductor laser device and method of fabricating the same

Provided is a semiconductor laser device in which at least an n-type first cladding layer, an active layer and a p-type second cladding layer are formed on or above an n-type semiconductor substrate. An n-type current block layer having a stripe-shaped groove-like removed portion is formed on the second cladding layer and at least a p-type third cladding layer is formed on the current block layer including the stripe-shaped removed portion. The second cladding layer has a p-type C impurity concentration of 3&#xd7;10cmto 2&#xd7;10cm.

Semiconductor laser device and fabricating method thereof

An AlGaAs-based semiconductor laseris formed on an n-type GaAs substrate, and thereafter, a non-doped GaAs protective layeris formed. When the n-type substrateis exposed by removing by etching a partial region of the AlGaAs-based semiconductor laser, an impurity Zn is prevented from evaporating from a p-type GaAs contact layer. The deterioration of the characteristic of contact with a p-type electrode as a consequence of a reduction in the carrier density of the p-type contact layercan be prevented. Furthermore, the impurity evaporated from the p-type contact layercan be prevented from readhering onto the exposed n-type substrate. A layer where the n-type GaAs substrateand the readhering impurity are mixed with each other is not formed when an AlGaInP-based semiconductor laseris succeedingly formed, and the reliability in long-term operation can be improved.

Semiconductor laser device fabricating method

Provided is a semiconductor laser device in which at least an n-type first cladding layer, an active layer and a p-type second cladding layer are formed on or above an n-type semiconductor substrate. An n-type current block layer having a stripe-shaped groove-like removed portion is formed on the second cladding layer and at least a p-type third cladding layer is formed on the current block layer including the stripe-shaped removed portion. The second cladding layer has a p-type C impurity concentration of 3&times;10 cm to 2&times;10 cm .

A semiconductor laser device having high performance, low operating voltage, and long service life, and a method for fabricating the same are provided. A semiconductor multilayer film including an active layer for use of laser beam oscillation is stacked on a substrate. Then a clad layer composed of p-type AlGaAs doped with a p-type impurity Mg, and a contact layer composed of p-type GaAs doped also with Mg are grown by an LPE growth process, and further a surface layer having a high-resistance portion present in the contact layer and low in carrier concentration is removed. The active layer for use of laser beam oscillation is arranged in a substantially center of an end surface from which the laser beam is emitted.

Growing community of inventors

Ikoma, Japan

Keisuke Miyazaki