Canon Kabushiki Kaisha

Hitachi, Ltd.

Hitachi Metals, Ltd.

Proterial, Ltd.

Keisuke Kobayashi

Naoki Tega

Akio Shima

Mieko Matsumura

Digh Hisamoto

Yuki Mori

Junichi Sakano

Hirotaka Hamamura

Koji Fujisaki

Haruka Shimizu

Toshiyuki Ohno

Teruyuki Higashiyama

Kumiko Konishi

Takashi Takahama

Ikunari Nakahara

Kiyoshi Oouchi

An image processing device includes an angle detection unit configured to detect an angle between a front portion of a movable apparatus and a rear portion of the movable apparatus, a combining unit configured to combine an image captured by a front portion imaging unit provided at the front portion and an image captured by a rear portion imaging unit provided at the rear portion, and a boundary calculation unit configured to calculate a boundary between the images combined in the combining unit on the basis of the angle.

Image processing device, image processing method, and storage medium

A SiC wafer including a SiC substrate and an epitaxial layer formed on the SiC substrate and containing SiC is provided, and a composition ratio of C—Si of an upper surface of the epitaxial layer is 50 atm % or less.

SiC wafer and manufacturing method thereof

In a silicon carbide stacked substrate, the efficiency of converting the basal plane dislocation (BPD) which is a fault to deteriorate the current-carrying reliability into a threading edge dislocation (TED) which is a harmless fault is improved, thereby improving the reliability of the silicon carbide stacked substrate. As means therefor, in a silicon carbide stacked substrate including a SiC substrate and a buffer layer and a drift layer which are epitaxial layers sequentially formed on the SiC substrate, a semiconductor layer having an impurity concentration lower than those of the SiC substrate and the buffer layer and higher than that of the drift layer is formed between the SiC substrate and the buffer layer so as to be in contact with an upper surface of the SiC substrate.

Silicon carbide stacked substrate and manufacturing method thereof

An image projection apparatus configured to project a projection image on a projected surface via a projection optical system that includes a first optical system capable of adjusting a curvature amount of an image plane and is interchangeably attached to the image projection apparatus includes an acquirer configured to acquire information on a reference position of the first optical system, and a controller configured to move the first optical system to the reference position when detecting an interchange of the projection optical system or when accepting an instruction from a user.

Image projection apparatus and storage medium capable of adjusting curvature amount of image plane

An image projection apparatus displays includes a lens attachable portion to which a plurality of projection lenses having different optical characteristics are interchangeably attached, a drive signal producer configured to produce, for each color light beam, a drive signal used to drive the light modulation element based on an input image signal, and an information acquirer configured to acquire information on an optical characteristic of the projection lens attached to the lens attachable portion. The information on the optical characteristic of the projection lens contains information on a chromatic aberration of the projection lens. The drive signal producer reduces influence of a shift below the modulation pixel caused by the chromatic aberration of the projection lens by using the information on the optical characteristic, and produces the drive signal corresponding to at least one of the plurality of color light beams.

Image projection apparatus, control method of the image projection apparatus, and storage medium

An image projection apparatus includes an acquirer configured to acquire information on a lens unit, and a controller configured to set, based on the information on the lens unit, at least one of an image orientation of a projection image and a shift direction of the lens unit.

Image projection apparatus

To solve a problem of realizing a large current and highly reliable power semiconductor device while shrinking a unit cell. A semiconductor device according to the present invention includes a plurality of p-type body regions extending in a first direction. The semiconductor device further includes: a JFET region formed to extend in the first direction between p-type body regions which are adjacent to each other in a second direction orthogonal to the first direction; an n-type source region formed to extend in the first direction within a p-type body region and separate from an end side surface of the p-type body; and a channel region formed to extend in the first direction and in a top layer portion of a p-type body region between an end side surface of the p-type body region and an end side surface of an n-type source region.

Semiconductor device and power conversion device

A MOSFET using a SiC substrate has a problem that a carbon-excess layer is formed on a surface by the application of mechanical stress due to thermal oxidation and the carbon-excess layer degrades mobility of channel carriers. In the invention, (1) a layer containing carbon-carbon bonds is removed; (2) a gate insulating film is formed by a deposition method; and (3) an interface between a crystal surface and the insulating film is subjected to an interface treatment at a low temperature for a short time. Due to this, the carbon-excess layer causing characteristic degradation is effectively eliminated, and at the same time, dangling bonds can be effectively eliminated by subjecting an oxide film and an oxynitride film to an interface treatment.

Silicon carbide semiconductor device and method for manufacturing same

In order to provide a high-performance and reliable silicon carbide semiconductor device, in a silicon carbide semiconductor device including an n-type SiC epitaxial substrate, a p-type body layer, a p-type body layer potential fixing region and a nitrogen-introduced n-type first source region formed in the p-type body layer, an n-type second source region to which phosphorus which has a solid-solubility limit higher than that of nitrogen and is easily diffused is introduced is formed inside the nitrogen-introduced n-type first source region so as to be separated from both of the p-type body layer and the p-type body layer potential fixing region.

Growing community of inventors

Tokyo, Japan

Keisuke Kobayashi