Toyota Jidosha Kabushiki Kaisha

Ngk Insulators, Inc.

Aisin Aw Co., Ltd.

Keisuke Kimura

Satoru Kameyama

Daisuke Tanaka

Shuichi Ichikawa

Sachiko Aoi

Taketoshi Aoki

Suguru Kodama

Masaki Koyama

Taku Nishigaki

Koichi Suga

Tatsuya Takei

Masatoshi Takahara

Takahide Iida

Shingo Hatori

Jun Inoue

Michio Suzuki

Yoshitaka Tabuchi

Ryuta Kouno

A method for manufacturing a honeycomb structure containing silicon carbide, including blending a recycled raw material derived from a material constituting a first honeycomb structure containing silicon carbide in a process after firing as a part of an initial raw material for a second honeycomb structure containing silicon carbide, wherein the initial raw material comprises silicon carbide and metallic silicon; and the recycled raw material is a powder recovered from the material constituting the first honeycomb structure containing silicon carbide in the process after firing, and after the recovering, a particle size is adjusted so that a 10% diameter (D10) is 10 μm or more and a 50% diameter (D50) is 35 μm or less when a cumulative particle size distribution on a volume basis is measured by a laser diffraction/scattering method.

Method for manufacturing honeycomb structure containing silicon carbide

A joining material used for joining side surfaces of a plurality of silicon carbide-based honeycomb segments to each other to produce a silicon carbide-based honeycomb structure. The joining material contains from 0.1 to 50% by mass of processed powder generated in the production of the silicon carbide-based honeycomb segments and/or the silicon carbide-based honeycomb structure. The joining material has an average particle diameter D50 of from 0.5 to 60 &#x3bc;m.

Joining material and silicon carbide based honeycomb structure

A honeycomb structure including a plurality of porous honeycomb block bodies bound via joining material layers A. Each of the porous honeycomb block bodies includes a plurality of porous honeycomb segments bound via joining material layers B, each of the porous honeycomb segment includes: partition walls that defines a plurality of cells to form flow paths for a fluid, each of cells extending from an inflow end face that is an end face on a fluid inflow side to an outflow end face that is an end face on a fluid outflow side; and an outer peripheral wall located at the outermost periphery. At least a part of the joining material layers A has higher toughness than that of the joining material layers B.

Honeycomb structure and method for producing honeycomb structure

A coating material for a honeycomb structure, the coating material containing: from 1% by mass to 10% by mass of first ceramic fibers having an average axial length of from 80 &#x3bc;m to 200 &#x3bc;m in an inorganic raw material; and from 0.1% by mass to 15% by mass of second ceramic fibers having an average axial length of from 50 &#x3bc;m to 70 &#x3bc;m in the inorganic raw material.

Coating material for honeycomb structure, outer peripheral coating of honeycomb structure, and honeycomb structure with outer peripheral coating

Front bumper for an automobile

Motor vehicle and/or toy replica thereof

Front combination lamp for an automobile

The semiconductor substrate may include an emitter region, an upper body region being in direct contact with the gate insulating film below the emitter region, an intermediate region being in direct contact with the gate insulating film below the upper body region, a lower body region being in direct contact with the gate insulating film below the intermediate region, a drift region being in direct contact with the gate insulating film below the lower body region, and a collector region being in direct contact with the drift region from below. The lower body region may include a first range and a second range that has a higher crystal defect density than the first range. The second range may be in direct contact with the gate insulating film. The first range may be in direct contact with the second range on a side opposed to the gate insulating film.

Semiconductor device and method of manufacturing the same

A honeycomb structure includes honeycomb segments each having a porous partition wall defining a plurality of cells, and includes a porous bonding layer containing a crystalline anisotropic ceramic and disposed so as to bond side surfaces of the honeycomb segments to each other. A ratio of a pore volume (cc/g) of a fine pore defined as a pore in the bonding layer having a pore diameter of 10 &#x3bc;m or more and less than 50 &#x3bc;m with respect to a pore volume (cc/g) of a coarse pore defined as a pore in the bonding layer having a pore diameter of 50 &#x3bc;m or more and 300 &#x3bc;m or less is from 2.0 to 3.5, the pore volume of the fine pore is from 0.15 to 0.4 cc/g, and the pore volume of the coarse pore is from 0.05 to 0.25 cc/g.

Honeycomb structure and method for manufacturing honeycomb structure

The present application discloses a semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate. The IGBT region includes: a collector layer; an IGBT drift layer; a body layer; a gate electrode; and an emitter layer. The diode region includes: a cathode layer; a diode drift layer; an anode layer; a trench electrode; and an anode contact layer. The diode region is divided into unit diode regions by the gate electrode or the trench electrode. In a unit diode region adjacent to the IGBT region, when seen in a plan view of the front surface of the semiconductor substrate, the anode layer and the anode contact layer are mixedly placed, and the anode contact layer is placed at least in a location opposite to the emitter layer with the gate electrode interposed therebetween.

Semiconductor device in which an insulated-gate bipolar transistor ( IGBT) region and a diode region are formed on one semiconductor substrate

A semiconductor device includes a main IGBT region in which an IGBT is provided, a main diode region in which a diode is provided, a sense IGBT region in which an IGBT is provided, and a sense diode region in which a diode is provided. A clearance between the body region and the anode region is longer than a product of electron mobility and electron lifetime in the n-type region between the body region and the anode region. A clearance between an end of the collector region on a sense diode region side and the body region is longer than a product of electron mobility and electron lifetime in the n-type region between the end and the body region.

Semiconductor device

In a honeycomb structure, a bonding material monolithically bonds a plurality of honeycomb segments. The bonding material contains crystalline anisotropic ceramic particle and a particulate pore former. The crystalline anisotropic ceramic particle is 20 mass % or less. An average particle diameter of the pore former in the bonding material is 80 to 200 &#x3bc;m. In the case where a compressive Young's modulus of the bonding material is assumed as E (unit: MPa) and a shear strength of the bonding material is assumed as &#x3c3; (unit: kPa), &#x3c3;/E is 5 to 50.

Honeycomb structure

A semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate is disclosed. The IGBT region includes: a body layer of a first conductivity type that is formed on a front surface of the semiconductor substrate; a body contact layer of the first conductivity type that is partially formed on a front surface of the body layer and has a higher impurity concentration of the first conductivity type than the body layer; an emitter layer of a second conductivity type that is partially formed on the front surface of the body layer; a drift layer; a collector layer; and a gate electrode. In the semiconductor device, a part of the body contact layer placed at a long distance from the diode region is made larger than a part of the body contact layer placed at a short distance from the diode region.

A semiconductor device in which an element region including at least an IGBT region is formed on a semiconductor substrate is presented. The IGBT region including: a collector layer; a drift layer; a body layer; a gate electrode placed inside a trench extending from the front surface of the semiconductor substrate to the drift layer; an emitter layer; and a contact layer having a higher impurity concentration than the body layer. In the semiconductor device, assuming that an x direction is a direction in which the trench extends along the front surface of the semiconductor substrate and that a y direction is a direction orthogonal to the x direction along the front surface of the semiconductor substrate, a distance from the contact layer to the emitter layer in the x direction is larger than a distance from the contact layer to the trench in the y direction.

When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

Growing community of inventors

Nagoya, Japan

Keisuke Kimura