Nissan Chemical Industries Limited

Nissan Chemical Corporation

Nagoya University

Keisuke Hashimoto

Rikimaru Sakamoto

Tetsuya Shinjo

Hirokazu Nishimaki

Takafumi Endo

Hikaru Tokunaga

Yasunobu Someya

Ryo Karasawa

Makoto Nakajima

Daigo Saito

Satoshi Takei

Hiroto Ogata

Hiroaki Okuyama

Takahiro Kishioka

Yasushi Sakaida

Masakazu Kato

Kenji Takase

Hideki Musashi

Masaru Hori

Makoto Sekine

Satoshi Takeda

Yuki Usui

Yuto Hashimoto

Yusuke Horiguchi

Hikaru Imamura

Masashi Ohno

Tomotada Hirohara

Satoshi Hamada

A resist underlayer film formation composition including a novolak resin that has a repeating unit structure represented by the following formula (1). (In formula (1), groups A and B are organic groups which each have an aromatic ring, a fused aromatic ring, or a fused aromatic heterocycle and have a structure in which two or more mono- or divalent chemical groups selected from the group consisting of chemical groups (a) that cause an increase in mass upon oxidation, groups (b) that form a crosslink upon heating, and groups (c) that induce phase separation during curing have replaced hydrogen atoms on the ring(s) contained in group A and/or B.) The composition further includes a crosslinking agent and an acid and/or acid generator. A production process is provided in which the resist underlayer film formation composition is applied to a semiconductor substrate and burned to obtain a resist underlayer film.

Composition for forming resist underlayer film with improved film density

A resist underlayer film-forming composition includes a resin; and a crosslinkable compound of Formula (1) or Formula (2): wherein the crosslinkable compound of Formula (1) or Formula (2) is a compound obtained by reacting a compound of Formula (3) or Formula (4): with an ether compound comprising a hydroxy group or a Calcohol.

Resist underlayer film-forming composition containing substituted crosslinkable compound

A resist lower layer film formation composition that exhibits a high etching resistance and a good dry-etching rate ratio and optical constant, exhibits good coating performance even on a so-called stepped substrate, produces a small film thickness difference after embedding, and enables a flat film to be formed. Also a method for manufacturing a polymer suitable for the resist lower layer film formation composition, a resist lower layer film in which the formation composition is used, and a method for manufacturing a semiconductor device. A resist lower layer film formation composition containing: a solvent; and a reaction product between an aromatic compound having 6-60 carbon atoms and a carbon-oxygen double bond of an oxygen-containing compound having 3-60 carbon atoms. The oxygen-containing compound has, in one molecule, one partial structure: —CON< or —COO—. In the reaction product, one carbon atom of the oxygen-containing compound links two of the aromatic compounds.

Resist underlayer film-forming composition using carbon-oxygen double bond

A resist underlayer film-forming composition including: a resin having a repeating structural unit including at least one —C(═O)—O— group in a main chain and a repeating structural unit including at least one hydroxy group in a side chain, or including at least one —C(═O)—O— group in a main chain and at least one hydroxy group in a side chain, wherein none of these units have an organic group containing an epoxy or oxetane ring; an acid catalyst or salt thereof in an amount of 0.1 to 10 parts by mass relative to 100 parts by mass of the resin, when the catalyst is a monovalent acid, an acid dissociation constant pKa is −0.5 or less in 25° C. water, or when a multivalent acid, an acid dissociation constant pKais −0.5 or less in 25° C. water; and a solvent, wherein the composition does not include a monomer crosslinking agent.

Resist underlayer film-forming composition

A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and Band Bare each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or Band Boptionally form a ring with a carbon atom bonded to Band B.

Resist underlayer film-forming composition containing indolocarbazole novolak resin

A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure, a hydrocarbon structure, and a solvent. The compound may have the photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure and the hydrocarbon structure in one molecule, or may be a combination of compounds which contain the structures in separate molecules.

Photocurable composition and method for producing semiconductor device

A resist underlayer film-forming composition has high solubility in a solvent used at a lithography process for exhibiting good coating film forming properties and able to decrease a sublime generated during formation of a film. A resist underlayer film-forming composition having a novolac resin having a structure group (C) obtained by a reaction of an aromatic ring structure of an aromatic ring-containing compound (A) with a vinyl group of an aromatic vinyl compound (B). The aromatic vinyl compound (B) is represented by Formula (1), and is specifically styrene, 2-vinylnaphthalene, 4-tert-butylstyrene, or 4-tert-butoxystyrene. The structure group (C) is represented by Formula (2). The aromatic ring-containing compound (A) is an aromatic amine compound or a phenolic hydroxy group-containing compound. The novolac resin is a resin produced by a reaction of the aromatic amine compound or the phenolic hydroxy group-containing compound with aldehyde or ketone.

Resist underlayer film-forming composition containing novolac resin to which aromatic vinyl compound is added

A resist underlayer film-forming composition formed into a flat film which can exhibit high etching resistance, a good dry etching velocity ratio and a good optical constant, has a good covering property even against a so-called step-structure substrate, and has a small film thickness difference after being embedded. Also, a method for producing a polymer suitable for the resist underlayer film-forming composition; a resist underlayer film using the resist underlayer film-forming composition; and a method for manufacturing a semiconductor device. A resist underlayer film-forming composition containing a reaction product of an aromatic compound having 6 to 60 carbon atoms with a carbonyl group in a cyclic carbonyl compound having 3 to 60 carbon atoms and a solvent, wherein the reaction product has such a structure that one of the carbon atoms in the cyclic carbonyl compound links two molecules of the aromatic compound to each other.

Resist underlayer film-forming composition including cyclic carbonyl compound

A resist underlayer film-forming composition including a novolac resin having a structural group (C) formed by reaction between an aromatic ring of an aromatic compound (A) having at least two amino groups and three Caromatic rings and a vinyl group of an aromatic vinyl compound (B). The structural group (C) may be a group of the following Formula (1): [wherein Ris a divalent group containing at least two amino groups and at least three Caromatic rings]. Rmay be a divalent organic group prepared by removal of two hydrogen atoms from aromatic rings of a compound of the following Formula (2): Rmay be a divalent organic group prepared by removal of two hydrogen atoms from aromatic rings of N,N'-diphenyl-1,4-phenylenediamine.

Resist underlayer film-forming composition that contains triaryldiamine-containing novolac resin to which aromatic vinyl compound is added

A resist underlayer film-forming composition exhibiting high etching resistance, high heat resistance, and excellent coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing the same; a method for forming a resist pattern; and a method for producing a semiconductor device. A resist underlayer film-forming composition including a polymer and a compound represented by Formula (1) as a solvent. In Formula (1), R, R, and Rin Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R, R, and Rmay be the same or different and may bond to each other to form a ring structure.

Resist underlayer film-forming composition containing amide solvent

A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or sulfur-containing structure, a hydrocarbon structure, and a solvent. A compound which contains at least one photodegradable structure in one molecule. A compound which contains the photodegradable structures, and the hydrocarbon structure in one molecule, or a combination of compounds which contain the structures in separate molecules. The hydrocarbon structure is a saturated or unsaturated, linear, branched or cyclic hydrocarbon group having a carbon atom number of 1 to 40. The nitrogen-containing structure contains a reactive nitrogen-containing functional group or reactive carbon-containing functional group produced by irradiation with ultraviolet light; and the sulfur-containing structure contains an organic sulfur radical or carbon radical produced by irradiation with ultraviolet light.

A stepped substrate coating composition for forming a coating film having planarity on a substrate, including: a main agent and a solvent, the main agent containing a compound (A), a compound (B), or a mixture thereof, the compound (A) having a partial structure Formula (A-1) or (A-2): and the compound (B) having at least one partial structure selected from Formulae (B-1)-(B-5), or having a partial structure including a combination of a partial structure of Formula (B-6) and a partial structure of Formula (B-7) or (B-8): where the composition is cured by photoirradiation or by heating at 30&#xb0; C.-300&#xb0; C.; and the amount of the main agent in the solid content of the composition is 95%-100% by mass.

Stepped substrate coating composition containing compound having curable functional group

A resist underlayer film for lithography has high solubility in a resist solvent (solvent used in lithography) for expressing good coating film forming property and a smaller selection ratio of dry etching rate as compared with a resist. A resist underlayer film-forming composition containing a novolac resin containing a structure (C) obtained by a reaction of an aromatic ring of an aromatic compound (A) with a hydroxy group-containing aromatic methylol compound (B). The aromatic compound (A) may be a component constituting the structure (C) in the novolac resin. The hydroxy group-containing aromatic methylol compound (B) may be a compound of Formula (1):  The hydroxy group-containing aromatic methylol compound (B) may be 2-hydroxybenzyl alcohol, 4-hydroxybenzyl alcohol, or 2,6-di-tert-butyl-4-hydroxymethyl phenol.

Resist underlayer film-forming composition containing novolac resin reacted with aromatic methylol compound

There is provided resist underlayer film for lithography process with high dry etching resistance, wiggling resistance, and heat resistance. Resist underlayer film-forming composition for lithography including polymer having unit structure of Formula (1): wherein A is hydroxy group-substituted Carylene group derived from polyhydroxy aromatic compound; B is Carylene group or Cheterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof; Xis H, NH, primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, or quaternary ammonium ion, T is hydrogen atom, Calkyl group or Caryl group that may be substituted with halogen group, hydroxy group, nitro group, amino group, carboxylate ester group, nitrile group, or combination thereof as substituent, or Cheterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof, B and T may form Cring together with carbon atom to which they are bonded. 

Growing community of inventors

Toyama, Japan

Keisuke Hashimoto