Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Hamamatsu-Photonics K.k.

Mirise Technologies Corporation

National University Corporation Tokai National Higher Education and Research System

Tokai National Higher Education and Research System

Keisuke Hara

Daisuke Kawaguchi

Masatake Nagaya

Chiaki Sasaoka

Shoichi Onda

Jun Kojima

Shinichi Hoshi

Ryuji Sugiura

Junji Ohara

Yoshitaka Nagasato

Toshiki Yui

Takashi Ushijima

Tomomi Aratani

Shosuke Nakabayashi

Hiroki Watanabe

Kozo Kato

A method of manufacturing a semiconductor device includes a trench forming step, a laser irradiation step and a peeling step. In the trench forming step, a trench is formed on a first main surface of a semiconductor substrate having a device structure formed thereon. In the laser irradiation step, a laser is irradiated from a second main surface of the semiconductor substrate to a plane surface that is positioned and extends at a predetermined depth of the semiconductor substrate. In the peeling step, a device layer is peeled off from the semiconductor substrate along the plane surface on which the laser is irradiated. The peeling step may be performed in a state in which the trenches are either unfilled or filled with a material having a lower coefficient of thermal expansion than the semiconductor substrate.

Manufacturing method of semiconductor device

A semiconductor chip includes a chip-constituting substrate having one surface, the other surface opposite to the one surface, and two pairs of opposing side surfaces connecting the one surface and the other surface. The one surface and the other surface are along one of a {c-plane, a {-m-plane, and a {-a-plane. One of the two pairs of opposing side surfaces is along another one of the {c-plane, the {-m-plane, and the {-a-plane. The other of the two pairs of opposing side surfaces is along the other of the {c-plane, the {-m-plane, and the {-a-plane. The side surface includes an altered layer containing gallium oxide and gallium metal in a surface layer portion in a depth direction which is a normal direction to the side surface.

Semiconductor chip and method for manufacturing the same

A manufacturing method of a semiconductor device, includes: forming a gas vent recess in a first surface of a compound semiconductor substrate, which includes a plurality of device regions adjacent to the first surface, along an interface between the plurality of device regions; forming an altered layer inside the compound semiconductor substrate to extend along the first surface at a depth corresponding to a range of a depth of the gas vent recess by applying a laser beam; dividing the compound semiconductor substrate at the altered layer into a first part including the first surface and a second part including a second surface of the compound semiconductor substrate opposite to the first surface; and forming a metal film to cover a divided surface of the first part while exposing the gas vent recess.

A semiconductor chip includes a chip constituent substrate having a first surface and a second surface, and including a layer containing gallium nitride. The chip constituent substrate is provided with a semiconductor element, and components constituting the semiconductor element are located more in an area adjacent to the first surface than in an area adjacent to the second surface. The chip constituent substrate is formed with a through hole penetrating the chip constituent substrate from the first surface to the second surface. The through hole defines a first opening adjacent to the first surface and a second opening adjacent to the second surface, and the first opening is larger than the second opening.

Growing community of inventors

Hamamatsu, Japan

Keisuke Hara