Denso Corporation

Keisuke Gotoh

Tetsuo Fujii

Masaya Tanaka

Kenichi Ao

Kentaro Mizuno

Norikazu Ohta

A dynamic quantity sensor device includes: first and second dynamic quantity sensors having first and second dynamic quantity detecting units; and first and second substrates, which are bonded to each other to provide first and second spaces. The first and second units are air-tightly accommodated in the first and second spaces, respectively. A SOI layer of the first substrate is divided into multiple semiconductor regions by trenches. First and second parts of the semiconductor regions provide the first and second units, respectively. The second part includes: a second movable semiconductor region having a second movable electrode, which is provided by a sacrifice etching of the embedded oxide film; and a second fixed semiconductor region having a second fixed electrode. The second sensor detects the second dynamic quantity by measuring a capacitance between the second movable and fixed electrodes, which is changeable in accordance with the second dynamic quantity.

Dynamic quantity sensor device and manufacturing method of the same

In a semiconductor physical quantity sensor, a pattern portion including a wiring pattern as a wiring is formed on a surface of a first semiconductor substrate. A support substrate having a surface made of an electrically insulating material is prepared. The first semiconductor substrate is joined to the support substrate by bonding the pattern portion to the surface of the support substrate. Further, a sensor structure is formed in the first semiconductor substrate. The sensor structure is electrically connected to the wiring pattern. A cap is bonded to the first semiconductor substrate such that the sensor structure is hermetically sealed.

Semiconductor physical quantity sensor

A region-divided substrate includes: a substrate having a first surface and a second surface opposite to the first surface and having a plurality of partial regions, which are divided by a plurality of trenches, wherein each trench penetrates the substrate from the first surface to the second surface; a conductive layer having an electrical conductivity higher than the substrate and disposed on a sidewall of one of the plurality of partial regions from the first surface to the second surface; and an insulator embedded in each trench.

Region-divided substrate, semiconductor device having region-divided substrate, and method for manufacturing the same

A sensor includes an acceleration detector, an angular velocity detector, a driver, and first to fourth springs. Each detector includes a pair of fixed electrodes, a pair of movable electrodes, and a pair of supporting members for supporting the movable electrodes. The driver causes the supporting members to vibrate in opposite phases in a first direction. The first spring couples the supporting members of the acceleration detector and has elasticity in a second direction perpendicular to the first direction. The second spring couples the supporting members of the acceleration detector to a base and has elasticity in both directions. The third spring couples the supporting members of the acceleration detector to the supporting members of the angular velocity detector and has elasticity in both directions. The fourth spring couples the supporting members to the movable electrodes of the angular velocity detector and has elasticity in the second direction.

Sensor for detecting acceleration and angular velocity

A sensor includes an acceleration detector, an angular velocity detector, a driver, and first to fourth springs. Each detector includes a pair of fixed electrodes, a pair of movable electrodes, and a pair of supporting members for supporting the moveable electrodes. The driver causes the supporting members to vibrate in opposite phases in a first direction. The first spring couples the supporting members of the accelereation detector and has elasticity in a second direction perpendicular to the first direction. The second spring couples the supporting members of the acceleration detector to a base and has elasticity in both directions. The third spring couples the supporting members of the acceleration detector to the supporting members of the angular velocity detector and has elasticity in both directions. The fourth spring couples the supporting members to the movable electrodes of the angular velocity detector and has elasticity in the second direction.

A region divided substrate includes a substrate, a plurality of trenches, a conductive layer, and an insulating member. The substrate has a first surface and a second surface opposed to each other. The trenches penetrate the substrate from the first surface to the second surface and divide the substrate into a plurality of partial regions. The conductive layer is disposed on a sidewall of each of the trenches from a portion adjacent to the first surface to a portion adjacent to the second surface. The conductive layer has an electric conductivity higher than an electric conductivity of the substrate. The insulating member fills each of the trenches through the conductive layer.

Region divided substrate and semiconductor device

A capacitive sensor device includes first and second sensor capacitors coupled in series, a clock signal generating part, an operational amplifier, a feedback capacitor, a compensating capacitor, and a compensating signal generating part. The clock signal generating part generates a first clock signal and the second clock signal applied to the first and second sensor capacitors, respectively. The compensating signal generating part generates a compensating signal applied to the compensating capacitor. The first clock signal and the second clock signal have the same frequency and the same amplitude and have phases being opposite each other. The compensating signal has a frequency same as the first clock signal and the second clock signal, has a phase same as one of the first clock signal and the second clock signal, and has an amplitude that is adjustable.

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Toyohashi, Japan

Keisuke Gotoh