Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Keisuke Furuta

Shuichi Fujikawa

Yukio Sato

Kimio Shigihara

Tomohiro Sasagawa

Junichi Nishimae

Hidetada Tokioka

Mitsuo Inoue

Tatsuki Okamoto

Tetsuya Ogawa

Yoko Inoue

Daisuke Morita

Tomotaka Katsura

Tomohiro Kyoto

Masaki Seguchi

Susumu Konno

Takafumi Kawai

A semiconductor laser machine includes a semiconductor laser element including a first end face that emits a laser beam and a second end face that is opposite the first end face; a heat sink; and a sub-mount securing the semiconductor laser element to the heat sink. The sub-mount includes a substrate that serves as a thermal stress reliever, a solder layer joined to the semiconductor laser element, and a junction layer formed between the substrate and the solder layer. Compared with the semiconductor laser element, the substrate is extended in a rearward direction that is from the first end face toward the second end face. As for the solder layer and the junction layer, a portion of at least the solder layer is removed behind the second end face.

Semiconductor laser machine

A wavelength conversion crystal including: a single nonlinear optical crystal which satisfies both of a first phase-matching condition and a second phase-matching condition, the first phase-matching condition being required for first wavelength conversion to convert a fundamental wave having a wavelength of 1064 nm into a second harmonic having a wavelength of 532 nm, and the second phase-matching condition being required for second wavelength conversion to convert the light having a wavelength of 532 nm into a fourth harmonic having a wavelength of 266 nm; and a first reflective face and a second reflective face for reflecting the light having a wavelength of 532 nm generated by the first wavelength conversion to supply it to the second wavelength conversion. This approach can efficiently generate a third or higher-order harmonic with a reliable and simple configuration.

Wavelength conversion crystal and wavelength conversion laser device

A laser oscillator includes a light condensing block having a through-hole for housing a laser medium, and an aperture for introducing excitation light from an excitation light source module into the through-hole; an end plate fixed to an end of the light condensing block, in which a cooling water channel for leading cooling water to the light condensing block and a cooling water channel for leading cooling water to the excitation light source module are formed; and a flow tube fixed and sealed by the end plate, for forming a cooling water passage for the laser medium; and an excitation light source module in which a cooling water channel, communicating with the water channel for the excitation light source module in the end plate, is formed for cooling its excitation light source.

Laser beam transmitter

A solid state laser excited by a semiconductor laser can generate a stable and highly efficient high power laser beam. The laser apparatus includes a solid state laser element containing an active medium, a semiconductor laser for optically exciting the solid state laser element, a power supply for supplying pulses of current having magnitudes that change with time during each pulse to the semiconductor laser, and an optical resonator for emission of a laser beam from the solid state laser element. When the semiconductor laser is driven with the pulses that change in magnitude during each pulse, it produces pulsed excitation light that excites the solid state laser element. A stable laser beam is produced because changes in thermally sensitive light-generating parameters of the semiconductor laser are compensated.

Solid state laser apparatus

An optical system that controls laser beam spot profile for forming a high performance thin film by a laser heat treatment process is provided. In the optical system that irradiates a rectangular laser beam on a film formed on a substrate, intensity distribution forming, apparatus makes the intensity distribution uniform in the longitudinal direction while maintaining the properties of the laser beam such as directivity in the direction of shorter side, making it possible to concentrate the light to a limit permitted by the nature of the laser beam and achieve the maximum intensity gradient on the film disposed on the substrate. Thus a steep temperature distribution can be generated on the film disposed on the substrate and, as a result, high performance thin film can be formed.

Optical system and apparatus for laser heat treatment and method for producing semiconductor devices by using the same

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Tokyo, Japan

Keisuke Furuta