Fujitsu Corporation

Keishiro Okamoto

Keiji Watanabe

Tomoyuki Abe

Motoaki Tani

Nobuhiro Imaizumi

Yasuo Yamagishi

Tadahiro Imada

Osamu Taniguchi

Takeshi Shioga

Masataka Mizukoshi

Nobuyuki Hayashi

Yoshihiko Imanaka

Kozo Shimizu

Koji Omote

Mamoru Kurashina

Kazuaki Kurihara

Seiki Sakuyama

Yoshikatsu Ishizuki

Kazuo Teshirogi

Kanae Nakagawa

Taiji Sakai

Masaki Kurasawa

Motoyuki Nishizawa

An electronic device includes: a first electronic component; first members that are provided on a first surface of the first electronic component and that include outside surfaces configured to face diagonally upward with respect to the first surface; a second electronic component provided above the first surface; second members that are provided corresponding to the first members on a second surface of the second electronic component which faces the first surface and that include inside surfaces configured to face diagonally downward with respect to the second surface and configured to face the outside surfaces; and solder that is provided between the first surface and the second surface and that electrically connects the first electronic component and the second electronic component.

Electronic device and method of manufacturing electronic device

A semiconductor apparatus includes: a semiconductor device including a first electrode; a substrate including a second electrode and a recess; and a heat-dissipating adhesive material to set the semiconductor device in the recess so as to arrange the first electrode close to the second electrode, wherein the first electrode is coupled to the second electrode and the heat-dissipating adhesive material covers a bottom surface and at least part of a side surface of the semiconductor device.

Method for manufacturing semiconductor apparatus

A manufacturing of a semiconductor device includes forming one of a layer with a first metal and the layer with a second metal on one of a semiconductor chip mounting area of a support plate and a back surface of the semiconductor chip; forming the other of the layer with the first metal and the layer with the second metal on an area corresponding to a part of the area, in which one of the layer with the first metal and the layer with the second metal, of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip; and forming a layer which includes an alloy with the first metal and the second metal after positioning the semiconductor chip in the semiconductor chip mounting area to bond the semiconductor chip with the semiconductor chip mounting area.

Semiconductor device and power source device

A semiconductor substrate is secured by suction to a rear face of a supporting face of a substrate supporting table. In this event, the thickness of the semiconductor substrate is made fixed by planarization on the rear face, and the rear face is forcibly brought into a state free from undulation by the suction to the supporting face, so that the rear face becomes a reference face for planarization of a front face. In this state, a tool is used to cut surface layers of Au projections and a resist mask on the front face, thereby planarizing the Au projections and the resist mask so that their surfaces become continuously flat. This can planarize the surfaces of fine bumps formed on the substrate at a low cost and a high speed in place of CMP.

Method for forming bumps, semiconductor device and method for manufacturing same, substrate processing apparatus, and semiconductor manufacturing apparatus

Semiconductor apparatus, method for manufacturing the same and electric device

Semiconductor device, manufacturing method of semiconductor device, and power source device

A method for manufacturing a semiconductor device includes placing a sheet containing a fibrous material having at least one outer surface having a metal on a semiconductor chip-mounting region of a substrate; forming a bonding layer containing a fusible metal on the semiconductor chip-mounting region; placing a semiconductor chip on the semiconductor chip-mounting region; and bonding the semiconductor chip to the semiconductor chip-mounting region with the fusible metal-containing bonding layer by heating.

Semiconductor device, method for manufacturing the same, and power supply unit

A semiconductor device includes: a semiconductor chip including a nitride semiconductor layered structure including a carrier transit layer and a carrier supply layer; a first resin layer on the semiconductor chip, the first resin layer including a coupling agent; a second resin layer on the first resin layer, the second resin layer including a surfactant; and a sealing resin layer to seal the semiconductor chip with the first resin layer and the second resin layer.

Semiconductor device and method for producing the same, and power supply

A stack of 50 layers of a first pitch-base carbon fiber sheet is formed, two sets of stack each having two second pitch-base carbon fiber sheets stacked therein are fabricated. At this time, the second carbon fiber sheets have a thermal expansion coefficient larger than that of the first carbon fiber sheet. Next, the stack of the first carbon fiber sheet is then held between two sets of stack of the second carbon fiber sheets. The stack of the first and second carbon fiber sheets are then impregnated with an epoxy-base resin composition and the resin is solidified. As a result a prepreg composed of the first and second carbon fiber sheets and the resin component composed of the epoxy-base resin composition is obtained. Thereafter, interconnections and the like are then formed on the prepreg, to thereby complete a multilevel interconnection board.

Multilevel interconnection board and method of fabricating the same

A semiconductor apparatus comprises a support substrate having through holes filles with conductor adapted to a first pitch; a capacitor formed on or above said support substrate; a wiring layer formed on or above said support substrate, leading some of said through holes filles with conductor upwards through said capacitor, having branches, and having wires of a second pitch different from said first pitch; and plural semiconductor elements disposed on or above said wiring layer, having terminals adapted to the second pitch, and connected with said wiring layer via said terminals. A semiconductor apparatus, in which semiconductor elements having a narrow terminal pitch, a support having through wires at a wider pitch, and a capacitor are suitably electrically connected to realize the decoupling function with reduced inductance and large capacitance.

Semiconductor system-in-package

The wiring board comprises a plate-shaped conductive core materialwith a through-holeformed in, an insulation layerformed on the surface of the conductive core materialand on the inside wall of the through-hole, a resinburied in the through-holewith the insulation layerformed in, wiringsformed on the upper surface and the undersurface of the conductive core materialwith the insulation layerformed on, and an wiringformed in the through-holeformed in the resinand electrically connected to the wirings

Wiring board and method for fabricating the same

The wiring board comprises a plate-shaped conductive core materialwith a through-holeformed in, an insulation layerformed on the surface of the conductive core materialand on the inside wall of the through-holea resinburied in the through-hole 12 with the insulation layerformed in, wiringsformed on the upper surface and the undersurface of the conductive core materialwith the insulation layerformed on, and an wiringformed in the through-holeformed in the resinand electrically connected to the wirings

An electrode connecting method of connecting a first electrode and a second electrode is disclosed. The respective bonding surfaces of the first and second electrodes are activated. Then, each of the first and second electrodes having the activated surfaces is coated with a coating member for maintaining an activated state. A solid state bond between the first electrode and the second electrode is formed by pressure welding the first electrode and the second electrode so that the first and second electrodes break through the coating members.

Electrode connection method, electrode surface activation apparatus, electrode connection apparatus, connection method of electronic components and connected structure

Growing community of inventors

Kawasaki, Japan

Keishiro Okamoto