Canon Kabushiki Kaisha

Tokyo Institute of Technology

Pioneer Electronic Corporation

Keishi Saito

Toshimitsu Kariya

Tatsuyuki Aoike

Masafumi Sano

Yasushi Fujioka

Minoru Kato

Mitsuyuki Niwa

Ryo Hayashi

Shigeru Shirai

Takayoshi Arai

Yuzo Koda

Naoto Okada

Hideo Hosono

Isamu Shimizu

Shunichi Ishihara

Yasuhiro Someda

Toshio Kamiya

Kenji Nomura

Shunri Oda

Masahiko Tonogaki

Katsumi Nakagawa

Yasufumi Asao

Yasuyoshi Takai

Koichi Matsuda

Jinsho Matsuyama

Shigeru Ichihara

Soichiro Kawakami

Tohru Den

Tatsuo Takeuchi

Tetsuya Takei

Akio Maruyama

Masao Sugata

Yoshihiro Oguchi

Keiji Hirabayashi

Susumu Ito

Hiroshi Satomura

Hirokazu Ohtoshi

Noriko Kurihara

Hiroshi Shimoda

Nobuyuki Ishikawa

Keiko Ikoma

Kuniji Osabe

Yuzo Kouda

Masahiro Kanai

Satoshi Ishii

Satoshi Kojima

Kenichi Nagae

Yukiko Iwasaki

Noboru Toyama

Takeo Ono

Junichiro Hashizume

Toru Sato

Atsushi Shiozaki

Takaharu Kondo

Katsuya Oikawa

Yusuke Miyamoto

Hirofumi Taki

Yuzo Kohda

Tomonori Nishimoto

Nobuo Kawase

Akio Ozawa

Susumu Sueyoshi

Fumio Matsushita

Hirofumi Yanagawa

Kikuo Ishikawa

Sumio Hagiwara

Kiyomi Yatsuhashi

Satoshi Kumada

Osamu Iketa

Masamichi Yumino

Yoshiki Ohta

Minoru Yoshida

Yutaka Nishio

Katsumi Amano

Provided are an ultrasonic probe capable of forming an image without degradation even when the frequency band of a photoacoustic wave and the frequency band of an ultrasonic wave used in ultrasonography are separated from each other, and an inspection object imaging apparatus including the ultrasonic probe. The ultrasonic probe includes a first array device capable of transmitting and receiving an ultrasonic wave; and a second array device capable of receiving a photoacoustic wave. The first array device includes plural electromechanical transducers arranged in a direction perpendicular to a scanning direction, the second array device includes plural electromechanical transducers arranged in a two-dimensional manner, and the first array device and the second array device are provided on the same plane and in the scanning direction.

Ultrasonic probe, and photoacoustic-ultrasonic system and inspection object imaging apparatus including the ultrasonic probe

An ultrasound image forming method comprises a first step of receiving a first signal reflected from the object, a second step of obtaining an aberration correction value based on the first signal thus received, a third step of receiving a second signal reflected from the object when a second ultrasound corrected based on the aberration correction value is transmitted to the object, and a fourth step of forming an image from the aberration correction value and the second signal. The center frequency of the second ultrasound is between 0.5 MHz and 20 MHz, the center frequency of the first ultrasound is between 3/16 and 9/20 of the center frequency of the second ultrasound. By this method, an accurate aberration correction value can be obtained and an ultrasound imaging with high resolution can be achieved even if aberrations are large and difficult to correct.

Image forming method using ultrasound and aberration correction method

A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Sensor and image pickup device

The present invention provides an organic EL display device having a planarizing layer, which is prevented from being distorted. The above organic EL display device has a planarizing layer, which retains 5% or less the oligomer used to form this layer.

Organic electroluminescent display device having a planarizing layer and manufacturing method thereof

Provided is a deposited film containing microcrystalline silicon by plasma CVD, which includes changing at least one of conditions selected from a high frequency power density, a bias voltage with respect to an interelectrode distance, a bias current with respect to an electrode area, a high frequency power with respect to a source gas flow rate, a ratio of a diluting gas flow rate to a source gas flow rate, a substrate temperature, a pressure, and an interelectrode distance, between conditions for forming a deposited film of a microcrystalline region and conditions for forming a deposited film of an amorphous region; and forming a deposited film under conditions within a predetermined range in the vicinity of boundary conditions under which the crystal system of the deposited film substantially changes between a amorphous state and a microcrystalline state.

Method of forming deposited film and method of forming photovoltaic element

A patterning method forms a pattern including a lyophilic region and a lyophobic region. The method includes treating the surface of an object by exposing an atmosphere containing at least one gas selected from the group consisting of hydrogen, deuterium, deuterated hydrogen, and tritium; partially exposing the treated surface to light to form an exposed region and an unexposed region; and applying a liquid onto one of the exposed region and the unexposed region.

Patterning method and methods for producing electro-optic device, color filter, illuminant, and thin-film transistor

In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising microcrystalline semiconductor, microcrystal grains of different grain diameters are provided as a mixture to form a semiconductor layer. Thereby, discontinuity of a semiconductor junction is lessened to thereby improve the characteristics, durability, and heat resisting properties of a semiconductor element. Distortion in a semiconductor layer is also reduced.

Semiconductor element and its manufacturing method

In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising microcrystalline semiconductor, providing microcrystal grains of different grain diameters as a mixture to form a semiconductor layer. Thereby, discontinuity of a semiconductor junction is improved to improve the characteristics, durability, and heat resisting properties of a semiconductor element. Distortion in a semiconductor layer is also reduced.

Semiconductor element having microcrystalline grains and manufacturing method thereof

The present invention provides a stacked photovoltaic element formed by stacking, on a substrate, at least a pin junction constituent element having a microcrystalline semiconductor in an i-type semiconductor layer and a pin junction constituent element having an amorphous semiconductor in an i-type semiconductor layer, wherein a current is controlled by the pin junction constituent element having the microcrystalline semiconductor in the i-type semiconductor layer, thereby obtaining a stacked photovoltaic element with a high photoelectric conversion efficiency and a reduced variation in the photoelectric conversion efficiency for a long light irradiation time.

Stacked photovoltaic element

Disclosed is a method for manufacturing a photovoltaic element wherein a pin-structure formed by laminating n-, i- and p-type semiconductor layers, each of which contains silicon atoms and has a non-monocrystalline crystal structure is formed at least one or more times on a substrate, the method comprising steps of forming each of the semiconductor layers and annealing the surface of at least one of the semiconductor layers or the substrate in an atmosphere of hydrogen gas, helium gas or argon gas that contains 1 to 1000 ppm of oxygen atom containing gas.

Method for manufacturing photovoltaic element

Growing community of inventors

Tokyo, Japan

Keishi Saito