Kabushiki Kaisha Toshiba

Keinichi Tokano

Masaru Izumisawa

Takahiro Kawano

Shigeo Kouzuki

Yasunori Usui

Yoshihiko Saito

As and B are implanted to side surfaces of trenchesby a rotation ion implanting method, and by using a difference between these impurities in diffusion coefficient, the structure in which an n-type epitaxial Si layer is interposed between trenchesis converted into a semiconductor structure consisting of n-type pillar layer/p-type pillar layer/n-type pillar layerlining up. The structure can function substantially the same role as that of a super junction structure.

Growing community of inventors

Kawasaki, Japan

Keinichi Tokano