Stanley Electric Co., Ltd

Keima Kono

Hideaki Yamamoto

Koji Ichikawa

Naochika Horio

Tatsuma Saito

Tsutomu Okubo

Eiji Takashiro

Daizo Kambara

Shigehiro Yanagisawa

Tsutomo Okubo

A semiconductor light emitting device includes a semiconductor light emitting laminate, and an SOI substrate including an upper semiconductor layer, an interlayer insulating film, and a lower semiconductor layer. The SOI substrate includes a first wiring electrode provided on the upper semiconductor layer through an insulating film and corresponding to a p-electrode, a second wiring electrode connected to the upper semiconductor layer and corresponding to an n-electrode, an anode that is provided on the lower semiconductor layer and connected to a first wiring electrode by a first via electrode passing through the SOI substrate, a cathode that is provided on the lower semiconductor layer through an insulating film and connected to the upper semiconductor layer by a second via electrode reaching the upper semiconductor layer. The p-electrode and the n-electrode are respectively bonded to the first wiring electrode and the second wiring electrode.

Semiconductor light emitting device and supporting substrate for semiconductor light emitting elements

A lighting apparatus comprising a light source which emits light with predetermined light distribution in a fixed direction, and an optical element which is arranged in such a manner that at least part of light emitted from the light source inputs to the optical element, and can perform switching to a transmission state in which the light is transmitted, a first reflection state in which the light is reflected in a first direction, and a second reflection state in which the light is reflected in a second direction different from the first direction.

Lighting apparatus capable of switching between transmission and two reflection states

There is provided a light-emitting element which includes a first semiconductor layer, a second semiconductor layer having an electrical conductivity that is different from that of the first semiconductor layer and an active layer disposed between the first and second layers, and a first and second electrodes respectively disposed on surfaces of the first and second semiconductor layers. The first electrode comprises a plurality of electrode pieces separated from each other; and each of the electrode pieces comprises a power feed pad, and an extended portion connected to the pad and that extends in a direction away from the pad, and a terminal end portion of the extended portion of an electrode piece is opposed to a terminal end portion of the extended portion of the other electrode piece across a gap.

Semiconductor light-emitting element and flash-light device

Growing community of inventors

Tokyo, Japan

Keima Kono