Mitsubishi Electric Corporation

Toshiba Electron Tubes & Devices Co., Ltd.

Canon Electron Tubes & Devices Co., Ltd.

Keiko Sakai

Akiko Suzuki

Naruhisa Miura

Yoichiro Tarui

Masayuki Imaizumi

Shohei Yoshida

Shinetsu Fujieda

Katsuhisa Homma

Sunao Aya

Hitoshi Chiyoma

Toshikazu Tanioka

Yukiyasu Nakao

Tomokatsu Watanabe

Masakuni Ikagawa

A method of manufacturing a silicon carbide semiconductor device having a silicon carbide layer, the method including a step of implanting at least one of Al ions, B ions and Ga ions having an implantation concentration in a range not lower than 1E19 cmand not higher than 1E21 cmfrom a main surface of the silicon carbide layer toward the inside of the silicon carbide layer while maintaining the temperature of the silicon carbide layer at 175&#xb0; C. or higher, to form a p-type impurity layer; and forming a contact electrode whose back surface establishes ohmic contact with a front surface of the p-type impurity layer on the front surface of the p-type impurity layer.

Silicon carbide semiconductor device comprising silicon carbide layer and method of manufacturing the same

According to one embodiment, a radiation detector includes, a substrate, a scintillator layer, a moistureproof body, and an adhesion layer. The substrate comprises a photoelectric conversion element. The scintillator layer is formed on the substrate and converts radiation into fluorescence. The moistureproof body comprises a flange portion in a periphery thereof, the moistureproof body being deep enough to contain at least the scintillator layer. The adhesion layer causes the substrate and the flange portion of the moistureproof body to adhere to each other in a sealed manner.

Radiation detector and method for producing the same

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Tokyo, Japan

Keiko Sakai