Toshiba Memory Corporation

Kabushiki Kaisha Toshiba

Kioxia Corporation

Keiko Morishita

Shingo Kanamitsu

Hideaki Sakurai

Kosuke Takai

According to one embodiment, a pattern inspection method includes detecting a region of a photomask having a pattern that differs from a corresponding design, acquiring an exposure focus shift information including an exposure focus shift amount of a portion of a substrate corresponding to the detected region of the photomask. The exposure focus shift amount for the detected region is acquired from the exposure focus shift information, and then a pass/fail determination for the detected region is performed based on an estimated pattern to be formed on the substrate.

Pattern inspection method and photomask fabrication method

A correction pattern generation device includes a processor configured to receive pattern information for a mask including a defect in a pattern formed on the mask, generate a correction pattern candidate for correcting the defect, calculate a correction difficulty degree for the correction pattern candidate, and select a correction pattern from correction pattern candidates based on the calculated correction difficulty degree for each correction pattern candidate if more than one correction pattern candidate for correcting the defect is generated.

Correction pattern generation device, pattern defect correction system, correction pattern generation method, and semiconductor device manufacturing method

A mask includes a plurality of line patterns provided on a substrate, the plurality of line patterns each including a line comprising a plurality of first layers and a plurality of second layers alternately stacked on the substrate. The lines of the plurality of line patterns extend in a first direction and the lines of the plurality of line patterns are spaced in a second direction crossing the first direction. A line of one of the plurality of line patterns has a first portion and a second portion on a side of the first portion in the first direction, the first portion wider than the second portion in the second direction.

Mask and manufacturing method of mask

In a pattern formation method according to an embodiment, a resist pattern is formed on a first film formed on a substrate. In the process for forming the resist pattern, the resist pattern includes a first pattern including a defect in a predetermined region on the first film. Next, a second film is accumulated on the first pattern in the predetermined region. Furthermore, a second pattern is formed in the first film with the resist pattern and the second film. Then, a third pattern is formed in the predetermined region on the first film.

Pattern formation method, control device, and semiconductor device manufacture method

In a pattern evaluation method of determining whether a pattern formed on a photomask is acceptable, an aberration parameter of an image quality evaluation apparatus for determining a pattern image intensity in transferring a pattern formed on a photomask onto a wafer is acquired. An acceptance criterion value used in determining whether an abnormal pattern of the photomask including the effect of aberration of the image quality evaluation apparatus is acceptable is set through a lithographic simulation using the acquired aberration parameter. Then, using the image quality evaluation apparatus, an image intensity of the abnormal pattern of the photomask and an image intensity of a normal pattern corresponding to the abnormal pattern are obtained. It is determined whether the difference between the two acquired image intensities is within the set acceptance criterion value.

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Yokohama Kanagawa, Japan

Keiko Morishita