Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Construction Machinery Co., Ltd.

Keiko Kushida

Hiroshi Miki

Yoshihisa Fujisaki

Kazuyoshi Torii

Shinichiro Takatani

Yasuhiro Shimamoto

Hiroshi Takeuchi

Hiromi Nakai

Masahiro Moniwa

Hiroshi Kawakami

Masahiko Hiratani

Kazumasa Takagi

Toshio Kobayashi

Yukio Ito

Kageyoshi Katakura

Hiroshi Kanda

Kazuhiro Sugawara

Kenzo Susa

Kazushige Imagawa

Yuuichi Matsui

The upper electrode of a capacitor is constituted of laminated films which act to prevent hydrogen atoms from reaching the capacitor electrodes and degrading performance. In one example, a four layer upper electrode respectively acts as a Schottky barrier layer, a hydrogen diffusion preventing layer, a reaction preventing layer, and an adsorption inhibiting layer. Therefore, the occurrence of a capacitance drop, imperfect insulation, and electrode peeling in the semiconductor device due to a reducing atmosphere can be prevented. In addition, the long-term reliability of the device can be improved.

Semiconductor storage device which includes a hydrogen diffusion inhibiting layer

A method for forming a semiconductor storage device includes steps of forming a memory cell transistor, forming a first plug connected to the memory cell transistor, forming a second plug of a hydrogen diffusion inhibiting layer, forming capacitor electrodes and a capacitor insulator between the capacitor electrodes and forming a hydrogen adsorption inhibiting layer.

Semiconductor storage device manufacturing method which forms a hydrogen diffusion inhibiting layer

A semiconductor device includes a capacitor having a lower electrode ( ), a high-dielectric-constant or ferroelectric thin film ( ), and an upper electrode ( ) which are subsequently stacked. An impurity having an action of suppressing the catalytic activity of a metal or a conductive oxide constituting the electrode is added to the upper electrode ( ). The addition of the impurity is effective to prevent inconveniences such as a reduction in capacitance, an insulation failure, and the peeling of the electrode due to hydrogen heat-treatment performed after formation of the upper electrode ( ), and to improve the long-term reliability.

Semiconductor device and fabrication method thereof

The upper electrode of a capacitor is constituted of laminated films which act to prevent hydrogen atoms from reaching the capacitor electrodes and degrading performance. In one example, a four layer upper electrode respectively act as a Schottky barrier layer, a hydrogen diffusion preventing layer, a reaction preventing layer, and an adsorption inhibiting layer. Therefore, the occurrence of a capacitance drop, imperfect insulation, and electrode peeling in the semiconductor device due to a reducing atmosphere can be prevented. In addition, the long-term reliability of the device can be improved.

Semiconductor storage device

A diffusion preventive layer extending between the bottom surface of a lower electrode and an interconnection connecting the lower electrode to one of the diffusion layer of a switching transistor is self-aligned. As a result, side trench is produced since a hole pattern is formed by using a dummy film, and even if a contact plug of a memory section is misaligned with the diffusion preventive layer, the contact plug is out of direct contact with a dielectric film having a high permittivity. Hence, a highly reliable device can be obtained.

Ferroelectric capacitor with a self-aligned diffusion barrier

A semiconductor device having a bottom electrode, a ferroelectric film, and a top electrode formed on a semiconductor substrate, wherein the angle of each of the main cross sectional sides of the ferroelectric film relative to the main surface of the semiconductor substrate is less than 75 degrees. Forming the ferroelectric film into the trapezoid in cross section having such an angle provides a microscopic capacitor without electrical short-circuit between the top and bottom electrodes if the top electrode, the ferroelectric film, and the bottom electrode are etched with single photolithography process step. The novel technique implements a microscopic memory cell structure suitable for highly integrated memory devices.

Method of fabricating semiconductor device

Semiconductor device and method for manufacturing the same

A diffusion preventive layer extending between the bottom surface of a lower electrode and an interconnection connecting the lower electrode to one of the diffusion layers of a switching transistor is self-aligned. As a result, no side trench is produced since a hole pattern is formed by using a dummy film, and even if a contact plug of a memory section is misaligned with the diffusion preventive layer, the contact plug is out of direct contact with a dielectric film having a high permittivity. Hence, a highly reliable device can be obtained.

Semiconductor storage device with ferrielectric capacitor and metal-oxide isolation

Semiconductor device and method of fabricating thereof

Semiconductor device and its manufacture

Semiconductor device and method of fabricating

Bi-layer oxide ferroelectrics

A thin film pattern and a method of fabricating the thin film pattern available for an ultrasonic transducer are disclosed. That is, an oriented thin film made of a material different from the material of a substrate is formed on the substrate, a mask having a predetermined pattern is formed on the thin film, and anisotropic etching is carried out for the thin film in accordance with the predetermined pattern of the mask, by using an etchant for selectively etching a predetermined crystallographic plane parallel to the surface of the thin film, to form the predetermined pattern in the thin film, thereby obtaining a thin film pattern.

Thin film pattern and method of forming the same

There is provided a piezoelectric transducer comprising a substrate having a single crystal plate comprising strontium titanate or magnesium oxide, a first electrode comprising metal films so formed on the substrate as to leave openings exposing the surface of the substrate, a piezoelectric thin film comprising lead titanate as the main component formed so as to cover the openings and the first electrode, and a second electrode formed on the piezoelectric thin film.

Piezoelectric transducer

Growing community of inventors

Kodaira, Japan

Keiko Kushida