Kabushiki Kaisha Toshiba

Keijiro Hirahara

Koichi Mizushima

Akira Miura

Keitaro Shigenaka

Nobuhiro Gemma

Katsuyoshi Fukuda

Fumio Nakata

Taiji Furuno

Hiroyuki Sasabe

A compound semiconductor device suitable for an infrared ray detector comprises a substrate composed of indium antimonide (InSb), a first conductive layer deposited on the substrate and composed of tin-indium antimonide represented by the formula Sn.sub.x (InSb).sub.1-x, where 0.05.ltoreq.x.ltoreq.0.3, a second conductive layer that is a semiconductor region (active region) formed on the first conductive layer, and electrode provided on the second conductive layer, and a surface protective film formed on the first conductive layer except for the electrode portions.

Tin-indium antimonide infrared detector

A light emitting element formed of a metal-insulator-semiconductor junction, the improvement wherein the insulator is a Langmuir-Blodgett film of an organic substance containing at least one of a synthetic protein and a natural protein. According to the element of this invention, stability of dynamic characteristics, luminescence efficiency and long-term stability can be significantly improved.

Light emitting element

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Tokyo, Japan

Keijiro Hirahara