Mitsubishi Denki Kabushiki Kaisha

Keiji Yamauchi

Hajime Watanabe

Yasuhiro Kimura

Hidekazu Yamamoto

Kenji Kusakabe

Yasukazu Mukogawa

Shigehisa Yamamoto

Masafumi Katsumata

A semiconductor substrate with no reduction in the effective usage area and mechanical strength, and non-uniformity of the resist film thickness, and method of manufacturing and using the same are obtained. A detection mark for detecting the crystal orientation of a silicon wafer having an outer perimeter entirely of a circular contour is formed at a predetermined region of the silicon wafer. The crystal orientation of the semiconductor wafer can easily be detected with the outer perimeter still taking a circular contour. Therefore, various problems encountered in a conventional semiconductor substrate having an orientation flat or notch such as reduction in mechanical strength and effective usage area, and non-uniformity of the resist film can be circumvented.

Crystal orientation detectable semiconductor substrate, and methods of

A semiconductor production apparatus employs a target prepared by using a solder alloy which has a limited Sn content. The solder alloy can form an alloy layer having large elongation between a metal target and a backing plate to prevent undesirable cracking and separation of target, whereby a semiconductor device can be produced with a high degree of reliability.

Semiconductor production apparatus

Growing community of inventors

Itami, Japan

Keiji Yamauchi