Matsushita Electronics Corporation

Keiji Yamane

Hideto Adachi

Akira Takamori

A method for producing a semiconductor element comprises the steps of: forming a plurality of grooves on a first surface of a semiconductor multi-layer structure along a first direction: forming a plurality of multi-element bars by cleaving the semiconductor multi-layer structure along a second direction; placing at least one of the plurality of multi-element bars on a support stage; and cleaving the at least one of the plurality of multi-element bars along the plurality of grooves by moving a pressure member in a longitudinal direction of the at least one of the plurality of multi-element bars while a constant load is applied by the pressure member to a second surface of the at least one of the plurality of multi-element bars, the second surface being opposite a third surface corresponding to the first surface of the at least one of the plurality of multi-element bars.

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Okayama, Japan

Keiji Yamane