Fujitsu Corporation

Mitsubishi Denki Kabushiki Kaisha

Canon Kabushiki Kaisha

Hitachi, Ltd.

Nkk Corporation

Nitto Chemical Industry Co., Ltd.

Jfe Steel Corporation

Hitachi Chemical Company, Ltd.

Fujitsu Isotec Limited

Fujitsu Limtied

Keiji Watanabe

Ei Yano

Takahisa Namiki

Masato Saito

Koji Nozaki

Ryo Suzuki

Miwa Kozawa

Hiroaki Nishio

Norikazu Nakamura

Yoshinori Tagawa

Takashi Maruyama

Hiroyuki Murayama

Kenji Fujii

Takashi Saitoh

Toshiyuki Mine

Hiroyasu Shichi

Keiji Matsumoto

Shirou Ozaki

Yasuhiro Yoneda

Tadahiro Imada

Kazuaki Kurihara

Junichi Kobayashi

Hideo Tamura

Yasuo Yamagishi

Nobuyuki Sugii

Shuntaro Machida

Toshihide Kikkawa

Shuji Koyama

Kazuki Watanabe

Satoshi Ibe

Toshihiro Ohki

Takashi Hattori

Kenji Imanishi

Tomonori Sekiguchi

Akira Kato

Kazuhiro Asai

Aya Yoshihira

Jun Watanabe

Souta Takeuchi

Noriyuki Sakuma

Jun Yamamuro

Tamaki Sato

Takao Ishikawa

Keiji Fukuyama

Miwa Igarashi

Daisuke Ryuzaki

Michitaka Sato

Tomio Nakamura

Eishin Yamakawa

Shigeru Shimizu

Satoshi Takechi

Taichi Yonemoto

Nobuhiro Imaizumi

Makoto Takahashi

Keishiro Okamoto

Michihiro Tsuchihashi

Takuya Ohira

Tetsufumi Kawamura

Eiichi Hoshino

Masatoshi Morishita

Hiroyuki Abo

Masayuki Ochiai

Makoto Watanabe

Ryuta Tsuchiya

Masaharu Kinoshita

Shun-ichi Fukuyama

Yuji Uehara

Kozo Shimizu

Masahito Kanamura

Hisanori Matsumoto

Susumu Hoshinouchi

Mieko Matsumura

Toyoo Miyajima

Misuzu Sagawa

Jun Kawai

Atsushi Isobe

Nobuo Kamehara

Yasushi Kurata

Koichi Kobayashi

Masato Yoshida

Shingo Nagata

Akio Shima

Keiji Aruga

Junichi Kon

Masahisa Watanabe

Isamu Horiuchi

Takashi Sugawara

Kazuo Ono

Yoshiharu Kasamatsu

Katsuya Miura

Takeshi Nojiri

Kenji Tamamori

Hirotaka Hamamura

Hiroaki Hasegawa

Koji Fujisaki

Tetsushi Ishikawa

Masashi Uzawa

Kunihito Uohashi

Manabu Otsuka

Yuji Yoshida

A thin film manufacturing method of manufacturing a laminate of a thin film of a coating film member and a support member includes a coating step of coating the coating film member on a surface of the support member, a sandwiching step of sandwiching the coating film member between the support member and a peeled-off member, a film thinning step of reducing a thickness of the coating film member by applying an external force to the coating film member sandwiched between the support member and the peeled-off member in a state where the coating film member is softened, and a peeling step of peeling the peeled-off member off the coating film member after the film thinning step.

Thin film manufacturing method and method of manufacturing substrate

A liquid ejection apparatus that prevents a user's hand from becoming dirty when attaching and detaching a liquid holding container, the liquid ejection apparatus includes a space portion that is open on a side surface of a housing, a liquid holding container that is detachably mounted to the space portion and includes an introduction port for introducing liquid to an inside thereof, on an upper surface, and a discharge portion that is provided at a position facing the introduction port inside the space portion in a state in which the liquid holding container mounted and includes a discharge port for discharging the liquid to the inside of the liquid holding container, in which the discharge portion is configured such that at least the discharge port is movable.

Liquid ejection apparatus

A sensor system that detects a vibration of a rotating part with a high accuracy even in a case in which a sensor is additionally attached is provided. The invention is directed to a sensor system includes a board that is installed in a rotating part of a cut processing machine; a plurality of acceleration sensors mounted on the board, and a signal processing unit (arithmetic operation). The signal processing unit detects a translational acceleration accompanying moving of the rotating part and a centrifugal acceleration accompanying rotation of the rotating part on the basis of acceleration data detected by each of the acceleration sensors.

Sensor system

A machine-tool-state determination system configured to determine a state associated with a machine tool including a rotation mechanism for processing a member, the system including: a sensor configured to acquire a state value from the machine tool; and an analysis device, in which the analysis device: performs spectral analysis with time series data of the state value, to extract a rotational frequency of the rotation mechanism and a harmonic wave to the rotational frequency; calculates a ratio of an amplitude of the rotational frequency to an amplitude of the harmonic wave; generates feature-amount data including the state value and the ratio as feature amounts; performs clustering with the feature-amount data; and determines a state associated with the machine tool, based on a result of the clustering.

Machine-tool-state determination system and machine-tool-state determination method

Provided is a method of manufacturing a liquid ejection head, which is capable of patterning a dry film while suppressing deformation of the dry film caused by a pressure. The method of manufacturing a liquid ejection head includes: preparing a substrate including an ejection orifice member on a first surface; forming, on an ejection orifice surface of the ejection orifice member, a protection film having communicating holes for allowing ejection orifices to communicate to outside; closing an opening of a supply port on a second surface on a side opposite to the first surface of the substrate with a dry film; and patterning the dry film by irradiating the dry film with light under a state in which the protection film is formed on the ejection orifice surface.

Method of manufacturing a liquid ejection head

A redeposited material is removed so as to electrically observe a microelement without causing foreign matters or metal contamination. An FIB device (charged particle beam device) includes an FIB barrel which discharges the focused ion beam (charged particle beam), a stage which holds a sample (substrate), a microcurrent measuring device (current measuring unit) which measures a leakage current from the sample, and a timer (time measuring unit) which measures a time to emit the focused ion beam and a time to measure the leakage current. Further, the FIB device includes a system control unit (control unit) which synchronizes a time to emit the focused ion beam and a time to measure the leakage current by the microcurrent measuring device.

Sensor characteristic evaluation method and charged particle beam device

The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view. The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points. In the second step, the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.

Micro-electro-mechanical-systems processing method, and micro-electro-mechanical-systems processing apparatus

For the purpose of shortening the MEMS manufacturing TAT, the MEMS manufacturing method according to the present invention includes a step of extracting the first MEMS with first characteristic in a range approximate to the required characteristic from the plurality of MEMS preliminarily prepared on the main surface of the substrate, and a step of forming a second MEMS having the required characteristic by directly processing the first MEMS.

MEMS manufacturing method and MEMS manufacturing apparatus

A sufficient processing speed and sufficient processing accuracy are obtained in a microstructure manufacturing method using ion beams. The microstructure manufacturing method includes the steps of: (a) irradiating a first region of a sample with a first ion beam (projection ion beam) formed by being passed through a first opening portion of a first mask, and etching the sample; and (b) irradiating a second region that is wider than the first region in a direction along a beam width, with a second ion beam (projection ion beam), and processing the sample. Furthermore, a magnitude of a skirt width of a longitudinal section of the second ion beam is smaller than a magnitude of a skirt width of a longitudinal section of the first ion beam.

Microstructure manufacturing method and ION beam apparatus

The present invention provides a technology for avoiding radiation of an ion beam at a position other than a desired processing position. A microstructure manufacturing method includes a step of radiating an ion beam to a sample; a step of supplying a gas to the sample; a step of stopping supplying the gas to the sample; and a step of stopping radiating the ion beam to the sample. The step of radiating the ion beam is performed earlier than the step of supplying the gas or the step of stopping supplying the gas is performed earlier than the step of stopping radiating the ion beam.

Microstructure manufacturing method and microstructure manufacturing apparatus

The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.

Device processing method and device processing apparatus

First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.

Microstructure processing method and microstructure processing apparatus

The present invention is directed to a technique for correcting processing positional deviation and processing size deviation during processing by a focused ion beam device. A focused ion beam device control method includes forming a first processed figure on the surface of a specimen through the application of a focused ion beam in a first processing range of vision; determining the position of a next, second processing range of vision based on the outer dimension of the first processed figure; and moving a stage to the position of the second processing range of vision thus determined. Further, the control method includes forming a second processed figure through the application of the focused ion beam in a second processing range of vision.

Control method and control program for focused ion beam device

A method for manufacturing a liquid-discharge-head substrate includes providing a substrate having an energy-generating element and a pad, the pad having a wiring layer and a contact-probe receiving section, the contact-probe receiving section having a Vickers hardness that is higher than a Vickers hardness of the wiring layer; bringing a contact probe into contact with the contact-probe receiving section; and performing an electrical inspection by bringing the contact probe into contact with the wiring layer in the pad.

Method for manufacturing liquid-discharge-head substrate

A manufacturing method of a MEMS sensor includes a step of, by irradiating a first hole formed in a second layer on a semiconductor substrate with a focused ion beam for a first predetermined time, forming a first sealing film, which seals the first hole, on the first hole, and a step of, by irradiating a second hole formed in the second layer with a focused ion beam for a second predetermined time, forming a second sealing film, which seals the second hole, on the second hole. At this time, each of the first predetermined time and the second predetermined time is a time in which thermal equilibrium of the second layer is maintainable, and the step of forming the first sealing film and the step of forming the second sealing film are performed repeatedly.

Manufacturing method of MEMS sensor

Growing community of inventors

Kawasaki, Japan

Keiji Watanabe