Kabushiki Kaisha Toyota Jidoshokki

Toyota Jidosha Kabushiki Kaisha

Showa Denko K.k.

Kabushiki Kaisha Toyoda Jidoshokki Seisakusho

Other

Kabushiki Kaisha Toyota Chuo Kenkyusho

Kabushiki Kaisha Toshiba Jidoshokki

Showa Denko Kabushiki Kaisha

Keiji Toh

Hidehito Kubo

Daigoro Mori

Masahiko Kimbara

Shinobu Yamauchi

Eiji Kono

Katsuyoshi Fujita

Shintaro Nakagawa

Akiko Kumano

Nobuhiro Wakabayashi

Shogo Mori

Katsufumi Tanaka

Yuichi Furukawa

Hiroyuki Mitsui

Kota Otoshi

Shohei Matsumoto

Norihiko Nakamura

Haruyuki Nakanishi

Nobuo Fujita

Hidekazu Arikawa

Yoshihiro Isogai

Hideyasu Obara

Takehiro Nito

Kazuhiko Itoh

Hirofumi Fujiwara

Susumu Kojima

Hiroshi Aoki

Tomojiro Sugimoto

Makoto Koike

Ryoichi Hoshino

Hidefumi Oishi

Shintaro Watanabe

Shinobu Tamura

Kiyoshi Yamazaki

Makoto Tsuzuki

Hiroshi Miyagawa

Haruo Takagi

Shinichi Towata

Makoto Ishikura

Kosei Yoshida

Rioh Shimizu

Daizo Kamiyama

Kumiko Nishizawa

Sinichi Towata

Hideki Morino

Masayoshi Miura

A hydrogen generator into which a mixed gas is run and out of which a reformed gas including hydrogen is discharged, which can reliably control the hydrogen concentration in the reformed gas to a desired concentration. The hydrogen generator is provided with an upstream side oxidation unit and a downstream side decomposition unit, burns part of the compound in the mixed gas in the oxidation unit using the oxygen in the mixed gas so as to generate heat of combustion, and uses the heat of combustion to break down another part of the compound in the mixed gas in the decomposition unit so as to generate hydrogen. The hydrogen generator is provided with a first temperature sensor controller.

Hydrogen generator

A power module base includes a heat radiation substrate formed of a high-thermal-conduction material, an insulating substrate joined to an upper surface of the heat radiation substrate, a wiring layer provided on an upper surface of the insulating substrate, and a heat radiation fin joined to a lower surface of the heat radiation substrate. A component attachment plate thicker than the heat radiation substrate and including a through hole for accommodating the insulating substrate is joined to the upper surface of the heat radiation substrate such that the insulating substrate is located within the through hole. This power module base can maintain the upper surface of the component attachment plate flat, and various components for a power module, such as a casing, can be attached onto the component attachment plate.

Base for power module

A hydrogen filling system includes: a hydrogen tank that is filled with hydrogen; a determination unit that determines whether to fill hydrogen into the hydrogen tank; and a temperature regulating unit that regulates a temperature of the hydrogen tank, wherein, when the determination unit determines to fill hydrogen into the hydrogen tank, the temperature regulating unit starts cooling the hydrogen tank before filling of hydrogen into the hydrogen tank is started.

Hydrogen filling system and hydrogen filling method

An apparatus and method purify hydrogen from a mixed fluid containing gaseous hydrogen, gaseous oxygen, and liquid water. The apparatus has a mixed fluid channel through which the mixed fluid flows; a first gas channel through which a mixed gas containing gaseous hydrogen and gaseous oxygen flows; a second gas channel through which gaseous hydrogen or oxygen flows; a gas-liquid separating membrane forming a wall between the mixed fluid channel and the first gas channel, separating the mixed gas from the mixed fluid of the mixed fluid channel, and providing the separated mixed gas to the first gas channel; and a hydrogen or oxygen separating membrane forming a wall between the first gas channel and the second gas channel, separating gaseous hydrogen or oxygen from the mixed gas of the first gas channel, and providing the separated gaseous hydrogen or oxygen to the second gas channel.

Apparatus for purifying hydrogen and method for using the same

The present invention provides a hydrogen generation device using a photocatalyst to generate hydrogen from liquid water or water vapor and a method of using the same. The hydrogen generation device of the present invention has a water channel through which liquid water or water vapor flows, and which has an outer circumferential wall made at least in part of a transparent material; a hydrogen channel through which hydrogen flows and which is located at the inner circumference side of the water channel; a hydrogen separating membrane forming at least part of a wall between the water channel and hydrogen channel, separating hydrogen from the liquid water or water vapor in the water channel, and providing the hydrogen to the hydrogen channel; and a photocatalyst layer arranged on least at part of the water channel-side surface of the hydrogen separating membrane.

Hydrogen generation device and method of using same

A heat sink () for power module is capable of mounting a power device () on at least a surface of the heat sink. The heat sink includes a refrigerant passage () in which cooling medium that dissipates heat generated by the power device () flows and a corrugated fin body () arranged in the refrigerant passage (). The corrugated fin body () has crests () and troughs () that extend in the flow direction of the cooling medium, and side walls () each of which connects the corresponding one of the crests () with the adjacent one of the troughs (). Each adjacent pair of the side walls () and the corresponding one of the crests () or the corresponding one of the troughs () arranged between the adjacent side walls () form a fin (). Each of the side walls () has a louver () that operates to, at least, rotate the cooling medium flowing in the associated fin (). The heat sink () thus has a further improved heat dissipating performance.

Heat sink for power module

A heat sink for a power module able to realize a further improvement of heat radiating performance and a further improvement of a mounting property is provided. The heat sinkfor a power module has a laminating body, a first side plateand a second side plate. The laminating bodyhas plural flow path platesformed in a plate shape in which plural groovesparallel to each other are concavely arranged on a flat joining face. Each grooveis set to a parallel flow pathparallel to a front face side by laminating each flow path plateby each joining face. A portion other than each grooveof each joining faceforms a heat transfer pathto each parallel flow pathof a laminating direction. A flow-in pathand a flow-out pathare formed in the first and second side plates. The flow-in pathand the flow-out pathare joined to side facesof the laminating body, and are communicated with each parallel flow path. The flow-in pathflows a cooling medium into each parallel flow path. The flow-out pathflows the cooling medium out of each parallel flow path. A refrigerant flow path is constructed by the flow-in path, each parallel flow pathand the flow-out path

A semiconductor device is provided that may include an insulating substrate having a ceramic substrate and metal coating layers on opposite surfaces of the ceramic substrate, a semiconductor chip mounted on one surface of the insulating substrate, and a heat sink directly or indirectly fixed to the other surface of the insulating substrate and thermally connected to the semiconductor chip through the insulating substrate. The heat sink may include a housing that is made of a metal sheet and radiating fins that are fixed in the housing and made of aluminum. The metal sheet may have a coefficient of thermal expansion between those of the insulating substrate and the radiating fin.

Semiconductor device includes a ceramic substrate and heat sink

A semiconductor device includes an insulating substrate having a ceramic substrate and metal coating layers on opposite surfaces of the ceramic substrate, a semiconductor chip mounted on one surface of the insulating substrate, a heat sink directly or indirectly fixed to the other surface of the insulating substrate and thermally connected to the semiconductor chip through the insulating substrate and at least one anti-warping sheet disposed on at least one surface of the heat sink. The anti-warping sheet is made of a metal sheet having a coating layer and has coefficient of thermal expansion between those of the insulating substrate and the heat sink.

Semiconductor device having anti-warping sheet

A heat radiatorincludes an insulating substratewhose first side serves as a heat-generating-element-mounting side, and a heat sinkfixed to a second side of the insulating substrate. A metal layeris formed on the second side of the insulating substrateopposite the heat-generating-element-mounting side. A stress relaxation memberformed of a high-thermal-conduction material intervenes between the metal layerof the insulating substrateand the heat sinkand includes a plate-like bodyand a plurality of projectionsformed at intervals on one side of the plate-like body. The end faces of the projectionsof the stress relaxation memberare brazed to the metal layer, whereas the side of the plate-like bodyon which the projectionsare not formed is brazed to the heat sink. This heat radiatoris low in material cost and exhibits excellent heat radiation performance.

Heat radiator and power module

A power module base includes a heat radiation substrate formed of a high-thermal-conduction material, an insulating substrate joined to an upper surface of the heat radiation substrate, a wiring layer provided on an upper surface of the insulating substrate, and a heat radiation fin joined to a lower surface of the heat radiation substrate. A component attachment plate thicker than the heat radiation substrate and including a through hole for accommodating the insulating substrate is joined to the upper surface of the heat radiation substrate such that the insulating substrate is located within the through hole. This power module base can maintain the upper surface of the component attachment plate flat, and various components required for a power module, such as a casing, can be attached onto the component attachment plate.

A semiconductor apparatus includes a semiconductor device, a cooler of a forced cooling type, and a heat mass. Heat generated in the semiconductor device is conducted to the cooler. The heat mass comes into junction with the semiconductor device with solder so as to be thermally combined with the semiconductor device. The heat mass functions also as an electrode.

Semiconductor apparatus and manufacturing method thereof

A semiconductor moduleincludes a ceramic substrate having a front surface on which a semiconductor elementis mounted and a rear surface on the opposite side of the front surface, a front metal platejoined to the front surface, a rear metal platejoined to the rear surface, and a heat sinkjoined to the rear metal plate. The rear metal plateincludes a joint surfacethat faces the heat sink. The joint surfaceincludes a joint area and a non-joint area. The non-joint area includes recesseswhich extend in the thickness direction of the rear metal plate. The joint area of the rear metal plateis in a range from 65% to 85% of the total area of the joint surfaceon the rear metal plate. As a result, excellent heat dissipating performance can be achieved while occurrence of distortion and cracking due to thermal stress is prevented.

Semiconductor module

A manufacturing method of a hydrogen storage tank stored with a hydrogen gas by including built-in hydrogen-occlusion alloys, has a stacking step of stacking plate members building up heat transfer fins, an arranging step of disposing the hydrogen-occlusion alloys between the neighboring plate members so as to form an area in which to dispose the hydrogen-occlusion alloys and an area in which to dispose none of the hydrogen-occlusion alloys, and a pressurizing step of forming air spaces sectioned by the plate members building up the heat transfer fins and containing the previously built-in hydrogen-occlusion alloys in a way that gets a part of the plate members deformed by pressurizing the plate members in a stacking direction thereof so as to restrict migrations of the hydrogen-occlusion alloys disposed in the arranging step.

Hydrogen storage tank and its manufacturing method

A semiconductor device is disclosed that includes a circuit board, a semiconductor element, a heat sink, and a stress relaxation member. The circuit board includes an insulated substrate, a metal circuit joined to one side of the insulated substrate, and a metal plate joined to the other side of the insulated substrate. The semiconductor element is joined to the metal circuit. The heat sink radiates heat generated in the semiconductor element. The stress relaxation member thermally joins the heat sink to the metal plate. The stress relaxation member is formed of a material having a high thermal conductivity. The stress relaxation member includes recesses, which curve inward from the peripheral portion of the stress relaxation member, to form stress relaxation spaces at the peripheral portion of the stress relaxation member.

Semiconductor device

Growing community of inventors

Kariya, Japan

Keiji Toh