Semiconductor Energy Laboratory Co., Ltd.

Fuji Jukogyo Kabushiki Kaisha

Kawasaki Steel Corporation

Canon Kabushiki Kaisha

Seiko Instruments Inc

Sony Corporation

Other

Seiko Instruments R & D Center Inc.

Sii R&d Center Inc.

Yokogawa Electric Corporation

Keiji Sato

Shunpei Yamazaki

Toru Takayama

Tetsunori Maruyama

Yuhei Sato

Kiyoshi Aratake

Minoru Takashima

Junichi Koezuka

Masashi Numata

Hitoshi Takeuchi

Bunjiro Fukuda

Takashi Obara

Takahiko Nakamura

Kengo Akimoto

Yutaka Saito

Yutaka Saitoh

Naoya Sakamoto

Atsuhito Honda

Hirofumi Honda

Masaki Kawano

Tadao Akamine

Toshitomo Sugiyama

Koh Nakano

Daisuke Terada

Toshinari Sasaki

Atsuo Isobe

Hiroshi Tanaka

Yasuo Inoue

Satoshi Inoue

Hiroyuki Suzuki

Hiroshi Ogawa

Sachiaki Tezuka

Tsutomu Murakawa

Motohisa Miyawaki

Takeharu Asano

Hajime Kashiwase

Naoto Suzuki

Takeshi Sugiyama

Akio Fujita

Takashi Hirose

Wataru Nonaka

Hideaki Noguchi

Motofumi Itawaki

Jun Nakayama

Yuka Komori

Eiji Hina

Junko Yamanaka

Noriyuki Yamazaki

Shogo Oki

Tetsuro Tsubota

Keiichi Maruyama

Osamu Iida

Ryoichi Himono

Atsushi Ogino

Katsutoshi Tozawa

Yoshitaka Otonomiya

Shigeru Uetake

Tadao Fujisawa

Junko Kohagura

Noboru Wakiyama

Teruji Cho

Mafumi Kondoh

Kouji Yano

Yoshie Kitamura

Haruo Takeda

Ichiro Tsubota

Masato Sawaoka

Katuro Yamaguchi

Kenji Oikawa

Ryuichiro Hayashi

Tomotaka Maki

Masato Katsuki

Akifumi Inomata

In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

Method of manufacturing semiconductor device

A method to be performed in a production support system configured to process a raw material and to produce a product. And the method includes: acquiring a plurality of element values relating to production elements of the product; determining whether the element values are within allowable ranges in which a quality of the product meets a predetermined allowed quality; resetting the allowable ranges of one or a plurality of other element values to the allowable ranges in which the quality of the product meets the predetermined allowed quality, upon determining that at least one element value exceeds the allowable range; and outputting information about the reset allowable ranges.

Production support system, method and product for monitoring production quality using adjustable allowable ranges

One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1&#xd7;10atoms/cm, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by HO or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

Sputtering target and manufacturing method thereof, and transistor

To provide a highly reliable semiconductor device manufactured by giving stable electric characteristics to a semiconductor device including an oxide semiconductor. In a manufacturing process of a transistor, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a gate insulating film, a gate electrode layer, and an aluminum oxide film are formed in this order, and then heat treatment is performed on the oxide semiconductor layer and the aluminum oxide film, whereby an oxide semiconductor layer from which an impurity containing a hydrogen atom is removed and which includes a region containing oxygen more than the stoichiometric proportion is formed. In addition, when the aluminum oxide film is formed, entry and diffusion of water or hydrogen into the oxide semiconductor layer from the air due to heat treatment in a manufacturing process of a semiconductor device or an electronic appliance including the transistor can be prevented.

Manufacturing method of semiconductor device

A drive apparatus for a vehicle includes an engine output system that outputs power from an engine and a power transmission system that transmits the power from the engine output system to a driving wheel. A power transmission path including a chain mechanism and a one-way clutch is provided between an oil pump and a turbine shaft that is part of the engine output system. Another power transmission path including a corresponding chain mechanism and a corresponding one-way clutch is provided between the oil pump and a primary shaft that is part of the power transmission system.

Drive apparatus for a vehicle

A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300&#xb0; C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from &#x2212;1&#xd7;10dyn/cmto 1&#xd7;10dyn/cm. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 &#x3bc;&#x3a9;&#xb7;cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof

According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.

Display device and method for manufacturing the same

An information recording apparatus has a stop mode in which only recording means comprised of a rotatable drum on which a recording head is mounted and recording medium driving means comprised of a capstan/pinch roller are stopped, which stop mode can be changed from a record temporary stop mode. During the stop mode of the recording means and the recording medium driving means, a video signal photo-taken by a camera of the information recording apparatus can be outputted externally, and, change to the stop mode is made effective by a combination of user's selection and/or presence/absence of an external connection device.

Information recording apparatus

It is an object to provide a method for packaging a target material with which a thin film that is less contaminated with an impurity in the air such as a compound containing a hydrogen atom can be formed. In addition, it is an object to provide a method for mounting a target with which a thin film that is less contaminated with an impurity can be formed. In order to achieve the objects, a target material in a target is not exposed to the air and kept sealed after being manufactured until a deposition apparatus on which the target is mounted is evacuated.

Method for packaging target material and method for mounting target

In a process of manufacturing a transistor including an oxide semiconductor layer, an amorphous oxide semiconductor layer which includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state is formed over a silicon oxide film, an aluminum oxide film is formed over the amorphous oxide semiconductor layer, and then heat treatment is performed so that at least part of the amorphous oxide semiconductor layer is crystallized and an oxide semiconductor layer which includes a crystal having a c-axis substantially perpendicular to a surface of the oxide semiconductor layer is formed.

Growing community of inventors

Tokyo, Japan

Keiji Sato