Nichia Corporation

Keiji Sakamoto

Masahiko Sano

Shinichi Nagahama

Tomoya Yanamoto

Masashi Yamamoto

Daisuke Morita

Hiroaki Matsumura

Kunihiro Izuno

Kouki Matsumoto

Tokuya Kozaki

Mitsuhiro Nonaka

Hiroki Sakata

Tsuyoshi Hirao

Takashi Abe

Hitoshi Minakuchi

Kenji Hashizume

Katsuyuki Kawabata

Tsuyoshi Ito

A method of manufacturing a light-emitting device includes: providing a substrate having a first surface and a second surface opposite to the first surface; forming, on or above the first surface of the substrate, a semiconductor structure comprising a light-emitting layer; forming a crack inside the substrate, the crack reaching the first surface of the substrate; disposing a wavelength conversion layer on the second surface of the substrate; forming a first recess in the wavelength conversion layer by removing a first portion of the wavelength conversion layer, the first portion overlapping with the crack when viewed in a direction from the wavelength conversion layer toward the semiconductor structure, and leaving a second portion of the wavelength conversion layer between the first recess and the semiconductor structure; and cleaving the second portion along the crack.

Method of manufacturing light-emitting device

A nitride semiconductor device having a substrate electrode establishing an excellent ohmic contact with a nitride semiconductor substrate is provided. The nitride semiconductor device includes a substrate having an electrode formed on at least one main surface. The substrate is a nitride semiconductor substrate whose surface includes two regions. The first region has an electrode formed thereon and a second region does not have any electrodes formed thereon. A first n-type impurity is included in a higher concentration in the first region than that in the second region in the vicinity of the surface of the substrate.

Nitride semiconductor device including different concentrations of impurities

A step of forming a first auxiliary groove in a semiconductor element structure provided on a semiconductor substrate, a step of forming a second auxiliary groove in the semiconductor element structure, and a step of dividing the semiconductor substrate and the semiconductor element structure in a direction along the first auxiliary groove and the second auxiliary groove are provided, and in the dividing direction, a plurality of the second auxiliary grooves are arranged spaced apart from each other, and at least two first auxiliary grooves are arranged spaced apart from each other between at least a pair of adjacent second auxiliary grooves, and in the dividing step, a separation region interposed between the two first auxiliary grooves is divided, so as to improve such accuracy and suppress the problems such as a damage of the end surface due to cleavage of the substrate.

Method of manufacturing semiconductor element

A substratefor growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layersto, an active layerand p-type nitride semiconductor layerstoare laminated to form a stack of nitride semiconductor on the first face of the substrate. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substratefor growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layerand the second bonding layerare faced with each other and, then, pressed with heat to bond together. After that, the substratefor growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

Nitride semiconductor device comprising bonded substrate and fabrication method of the same

A method for manufacturing a nitride semiconductor laser element, equipped with a laminate that has a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer on a substrate, and constitutes a resonator, comprises the steps of: forming a first auxiliary groove having an exposed region extending in the resonator direction of the laser element and in which at least the second conductivity type nitride semiconductor layer and the active layer are removed from the second conductivity type nitride semiconductor layer side on both sides in the resonator direction of an element region where the laser element is formed on the surface of the laminate, thereby exposing the first conductivity type nitride semiconductor layer, and two protrusion regions that are narrower than the exposed region and protrude in the resonator direction from the exposed region; forming a second auxiliary groove whose angle of inclination of the side faces with respect to the normal direction versus the substrate surface is greater than that of the first auxiliary groove within the exposed region; and dividing the substrate and the laminate with using the second auxiliary groove.

Method for manufacturing nitride semiconductor laser element, and nitride semiconductor laser element

The nitride semiconductor laser device has a counter electrode structure where contact resistance is reduced and manufacturing methods thereof are provided. The nitride semiconductor laser device comprises a nitride semiconductor substrate having a first main surface and a second main surface. A nitride semiconductor layer is stacked on the first main surface of the nitride semiconductor substrate. A ridge-shaped stripe is formed in the nitride semiconductor layer, and a resonance surface forms an optical waveguide in the direction perpendicular to the length of the ridge-shaped stripe. A first region having a crystal growth facet in the (0001) plane and a second region on the first main surface or the second main surface are provided. Further, a recess is formed in the second region of the first main surface and/or the second main surface. A ridge-shape stripe is formed over the first main surface of the nitride semiconductor substrate.

Nitride semiconductor laser device and method of manufacturing the nitride semiconductor laser device

A light emitting apparatus comprising a light emitting device () disposed on a supporting body (), and coating layers (() that bind a fluorescent substance that absorbs light emitted by the light emitting device () and emits light of a different wavelength and secures the fluorescent substance onto the surface of the light emitting device (). The coating layers () are made of an inorganic material including an oxide and a hydroxide, each containing at least one element selected from the group consisting of Si, Al, Ga, Ti, Ge, P, B, Zr, Y, Sn, Pb and alkali earth metals. Also an adhesive layer () is made of the same inorganic material as that of the coating layers ().

Light emitting apparatus and method of manufacturing the same

A substratefor growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layerstoan active layerand p-type nitride semiconductor layerstoare laminated to form a stack of nitride semiconductor on the first face of the substrateA first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layerA supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substratefor growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layerand the second bonding layerare faced with each other and, then, pressed with heat to bond together. After that, the substratefor growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

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Anan, Japan

Keiji Sakamoto