Nippon Sheet Glass Company, Limited

Keiji Oyoshi

Shuhei Tanaka

Takashi Tagami

Tomonori Yamaoka

Provided herein is a process for producing a polycrystalline semiconductor film at a low temperature. The process comprises the steps of depositing on a glass substrate by plasma CVD an amorphous silicon film containing the crystal phase as well as hydrogen, heating the film using a heater, thereby releasing hydrogen from the film, and growing the crystal phase by silicon ion implantation, thereby changing the amorphous silicon film into a polycrystalline silicon film containing crystal grains. The releasing of hydrogen from the amorphous silicon film permits the polycrystalline silicon film to be formed at a lower temperature than before without the growth of crystal phase being inhibited.

Method of making a semiconductor film where the hydrogen and/or fluorine

An optical wave guide is formed by implanting at least two ionic species capable of forming an oxide, a nitride or a halide into the surface of a substrate.

Method of forming optical waveguides by ion implantation

The present invention concerns a method of preparing an alkali metal diffusion-preventive layer by applying one of three specific methods in a method of forming an alkali metal diffusion-preventive layer containing phosphorus at the inside of the substrate containing silicon by ion implantation of phosphorus, thereby enabling to prepare an alkali metal diffusion-preventive layer having higher alkali metal diffusion-preventive performance than that of the alkali metal diffusion-preventive layer prepared by the conventional method.

Growing community of inventors

Tsukuba, Japan

Keiji Oyoshi