Sony Semiconductor Solutions Corporation

Keiji Nishida

Akira Matsumoto

Koichiro Zaitsu

Tomoyuki Arai

Naohiro Takahashi

Mizuki Nishida

Yosuke Satake

There is provided an imaging device including a semiconductor substrate and a plurality of imaging elements that are arrayed in a matrix in a first direction and a second direction on the semiconductor substrate and perform photoelectric conversion on incident light. Each of the plurality of imaging elements includes a plurality of pixels that are provided in a predetermined unit region of the semiconductor substrate to be adjacent to each other and contains impurities of a first conductivity type, a separation section that separates the plurality of pixels, two first element separation walls that are provided along two first side surfaces extending in the second direction of the predetermined unit region to pierce through at least a part of the semiconductor substrate, and a first diffusion region provided in the semiconductor substrate around the first element separation wall and the separation section and containing impurities of a second conductivity type.

Imaging device and electronic equipment

Provided is a solid-state imaging device that includes a plurality of photoelectric conversion units formed on a substrate to generate signal charges according to an amount of incident light, a microlens array including a microlens for a photoelectric conversion unit group including at least two or more adjacent photoelectric conversion units to guide incident light to the photoelectric conversion unit group, a scatterer on an optical path of the incident light collected by the microlens, and an inter-pixel light shielding portion including a groove between the photoelectric conversion unit of the photoelectric conversion unit group and the photoelectric conversion unit adjacent to the photoelectric conversion unit group and an insulating material filled in the groove. An opening side of an inner side surface of the groove on the scatterer side is a flat surface inclined so that a groove width becomes narrower toward a bottom of the groove.

Solid-state imaging device and electronic device

The present disclosure relates to a solid-state imaging device, an imaging device, and an electronic apparatus that are capable of suppressing generation of flare and also suppressing coloring caused by the flare with a simple configuration. A high refractive index layer is formed between a solid-state imaging element and a transparent protective substrate (glass substrate). When reflected light caused by diffracted light generated from an on-chip lens is reflected at an interface with the high refractive index layer, the reflected light is entirely reflected at a surface layer that is a transparent protective substrate and then the reflected light is sufficiently attenuated before being incident again. Consequently, flare and coloring caused by the flare are suppressed. The present disclosure is adaptable to an imaging device.

Growing community of inventors

Kanagawa, Japan

Keiji Nishida