Sony Corporation

Sony Semiconductor Solutions Corporation

Kabushiki Kaisha Toshiba

Sony Group Corporation

Other

Sony Coroporation

Keiji Mabuchi

Takashi Abe

Nobuo Nakamura

Eiichi Funatsu

Hiroki Sato

Hiroaki Fujita

Tomoyuki Umeda

Ryoji Suzuki

Takeshi Yanagita

Toshifumi Wakano

Tomonori Mori

Yorito Sakano

Takahisa Ueno

Tsutomu Haruta

Taiichiro Watanabe

Koichi Shiono

Hirofumi Yamashita

Ken Koseki

Akihiro Yamada

Nagataka Tanaka

Hideo Kido

Yuko Ohgishi

Tetsuya Iizuka

Eiji Makino

Shinjiro Kameda

Hiromasa Saito

Tetsuo Nomoto

Hiroaki Ishiwata

Tsutomu Imoto

Masakazu Furukawa

Shunichi Urasaki

Hiroyuki Mori

Fumihiko Koga

Hideshi Abe

Yoshiharu Kudoh

Hideo Kanbe

Ryohei Miyagawa

Kazunobu Ota

Masanori Kasai

Shiro Uchida

Nobuhiro Karasawa

Michio Sasaki

Eiji Oba

Yukihiro Kiyota

Testuya Iizuka

Yoshiyuki Matsunaga

Yusuke Oike

Ken Nakajima

Hirofumi Sumi

Takashi Machida

Shinji Ohsawa

Hiroki Miura

Takamasa Wada

Takashi Nakashikiryo

Kazunari Matsubayashi

Tetsuji Yamaguchi

Isao Hirota

Masaki Sakakibara

Yoshinori Iida

Kouichi Harada

Tetsuya Yamaguchi

Hisanori Ihara

Katsuaki Hirota

Susumu Inoue

Atsushi Ooshima

Kasai Masanori

Yortio Sakano

Nobuyuki Satou

A solid-state imaging device and method of making a solid-state imaging device are described herein. By way of example, the solid-state imaging device includes a first wiring layer formed on a sensor substrate and a second wiring layer formed on a circuit substrate. The sensor substrate is coupled to the circuit substrate, the first wiring layer and the second wiring layer being positioned between the sensor substrate and the circuit substrate. A first electrode is formed on a surface of the first wiring layer, and a second electrode is formed on a surface of the second wiring layer. The first electrode is in electrical contact with the second electrode.

Solid-state imaging device and electronic apparatus

A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

Solid-state imaging device, drive method thereof and electronic apparatus

The present technology relates to a conversion apparatus, an imaging apparatus, an electronic apparatus, and a conversion method that are capable of reducing the scale of a circuit. The conversion apparatus includes: a comparison unit that compares an input voltage of an input signal and a ramp voltage of a ramp signal that varies with time; and a storage unit that holds a code value when a comparison result from the comparison unit is inverted, the holding of the code value by the storage unit being repeated a plurality of times, to generate a digital signal having a predetermined bit number. The predetermined bit number is divided into high-order bits and low-order bits, the low-order bits are acquired earlier than the high-order bits, and the acquired low-order bits and the high-order bits are combined with each other, to generate the digital signal having the predetermined bit number. The present technology can be applied to a portion of an image sensor, in which AD conversion is performed.

Conversion apparatus, imaging apparatus, electronic apparatus, and conversion method

The present technology relates to an imaging device that can reduce the size thereof, and to an electronic apparatus. An upper substrate and a lower substrate are stacked. A pixel and a comparing unit that compares the voltage of a signal from the pixel with the ramp voltage are provided on the upper substrate, the ramp voltage varying with time. A storage unit that stores a code value obtained at a time when a comparison result from the comparing unit is inverted is provided on the lower substrate. The comparing unit is formed with a transistor that receives the voltage of the signal from the pixel at the gate, receives the ramp voltage at the source, and outputs a drain voltage. Accordingly, the imaging device can be made smaller in size. The present technology can be applied to image sensors.

Imaging device and electronic apparatus with upper and lower substrates

A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.

Solid-state imaging device

An imaging device includes a pixel region in which light sensing pixels are grouped into pixel-units that each include multiple pixels, each column including pixels from at least two of the pixel-units. Each of the pixel-units is connected, via a corresponding readout line, to a corresponding readout unit configured to perform analog-to-digital conversion on pixel signals output thereto. A scanning unit that extends in a column direction is configured to select pixels for readout by applying row scanning pulses to scan lines connected to rows. A scanning unit that extends in a row direction for applying readout-enabling scan pulses to lines connected to columns is omitted. Those pixels that are selected for readout by one of the row scanning pulses are read out independently of any enabling pulses applied to lines connected to columns.

Solid-state imaging device and imaging apparatus

A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.

Solid-state imaging device, production method of the same, and imaging apparatus

A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup devicein which micro padsare formed on the wiring layer side and a signal processing chiphaving micro padsformed on the wiring layer at the positions corresponding to the micro padsof the MOS solid-state image pickup deviceare connected by micro bumps. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.

Semiconductor module, MOS type solid-state image pickup device, camera and manufacturing method of camera

There is provided an imaging device that includes photovoltaic type pixels that have photoelectric conversion regions generating photovoltaic power for each pixel depending on irradiation light; and an element isolation region that is provided between the photoelectric conversion regions of adjacent pixels and in a state of substantially surrounding the photoelectric conversion region.

Imaging device and electronic apparatus

Growing community of inventors

Kanagawa, Japan

Keiji Mabuchi