Elpida Memory, Inc.

Other

Hitachi, Ltd.

Hitachi Ulsi Systems Co., Ltd.

Longitude Semiconductor S.a.r.l.

Keiji Kuroki

Yoshitaka Nakamura

Isamu Asano

Shinpei Iijima

Hiroshi Sakuma

Hidekazu Goto

Tsuyoshi Kawagoe

Kenichi Koyanagi

Mitsuhiro Horikawa

A method for manufacturing a semiconductor device comprises forming a first layer on an impurity diffusion region in a semiconductor substrate by a selective epitaxial growth method, forming a second layer on the first layer by the selective epitaxial growth method, forming a contact hole penetrating an interlayer insulating film in a thickness direction thereof and reaching the second layer, and filling a conductive material into the contact hole to form a contact plug including the first and second layers and the conductive material.

Semiconductor device and method for manufacturing the same

A semiconductor storage device is manufactured by the following steps. A cylindrical hole is formed in an interlayer insulating film. Then, a multilayer conductive layer including a first sublayer and a second sublayer is formed over the entire surface of the insulating interlayer including the internal surface of the hole. The second sublayer has a higher nitrogen content than the first sublayer. A cup-like lower electrode is formed by reactive ion etching of the conductive layer under conditions that the second sublayer is etched faster than the first sublayer, so that the conductive layer remains only on the internal surface of the hole, and so that the upper edge of the remaining conductive layer forms an angle of 45&#xb0; or less with the internal wall of the hole. Then, a capacitor insulating layer and an upper electrode are formed in that order on the lower electrode.

Semiconductor storage device and method for manufacturing the same

A method for manufacturing a semiconductor memory having a memory cell selection transistor and a capacitor, comprises a step of forming a polysilicon plug having a large-diameter portion on a side of the capacitor, a step of forming a hole reaching the large-diameter portion by etching an insulating film formed on the large-diameter portion using the large-diameter portion as an etching stopper layer, and a step of forming a conductive film inside the hole so as to serve as an electrode for the capacitor.

Method for manufacturing semiconductor memory

A semiconductor device includes memory cells each having an MISFET for memory selection formed on one major surface of a semiconductor substrate and a capacitive element comprised of a lower electrode electrically connected at a bottom portion to one of a source and drain of the MISFET for memory selection via a first metal layer and an upper electrode formed on the lower electrode via a capacitive insulating film. The lower electrode has a thickness of 30 nm or greater at the bottom portion thereof. Sputtering with a high ionization ratio and high directivity, such as PCM, is adapted to the formation of the lower electrode to make only the bottom portion of a capacitor thicker.

Memory with memory cells that include a MIM type capacitor with a lower electrode made for reduced resistance at an interface with a metal film

After an upper electrode protective film is formed such that it is in a firm contact with ruthenium film of the upper electrode without damaging the ruthenium film, the upper electrode is etched, thereby, a MIM capacitor is obtained in which leak current is not increased due to oxidation of the ruthenium film of the upper electrode.

Manufacturing method of semiconductor device

A lower electrode of a capacitor element is formed by manufacturing a crown structure while using a first conducting material such as titanium nitride or the like excellent in mechanical strength as a base material and by forming a film of a second conducting material such as ruthenium or the like, which is comparatively difficult to be oxidized, on a surface of the crown structure. First, ruthenium is deposited on a surface of the crown structure by using a sputtering method. Thereafter, the ruthenium (sputtered ruthenium) placed in a peripheral region of the crown structure is removed by etching, and a film of ruthenium is further formed on a surface of the crown structure by using a CVD method while using the sputtered ruthenium as a seed layer.

Growing community of inventors

Tokyo, Japan

Keiji Kuroki