Jsr Corporation

Keiji Konno

Masato Tanaka

Eiji Hayashi

Junichi Takahashi

Tomoki Nagai

Kinji Yamada

Atsushi Shiota

Kohei Goto

Takahiko Kurosawa

Nakaatsu Yoshimura

Toshiyuki Akiike

Momoko Ishii

Tadahiro Shiba

Tsutomu Shimokawa

Hikaru Sugita

Nobuo Bessho

Kenji Yamada

Atsushi Kumano

Makoto Sugiura

Igor Rozhanskii

Norihiro Natsume

Seo Youngsoon

A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen asking during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A),RRSi(OR)&#x2003;&#x2003;(A)wherein Ris a monovalent organic group having at least one unsaturated bond, Rindividually represents a hydrogen atom, a halogen atom or a monovalent organic group, Rindividually represents a monovalent organic group, Ris a group other than OR, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.

Composition for resist underlayer film and process for producing same

A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen ashing during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A),RRSi(OR)&#x2003;&#x2003;(A)wherein Ris a monovalent organic group having at least one unsaturated bond, Rindividually represents a hydrogen atom, a halogen atom or a monovalent organic group, Rindividually represents a monovalent organic group, Ris a group other than OR, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.

A pattern-forming method includes selectively exposing a resist layer formed using a positive-tone radiation-sensitive resin composition including a resin component and an acid generator. The resist layer is developed to form a first pattern. An uncrosslinked embedded section is formed adjacent the first the pattern using a pattern-forming resin composition including a polymer. The polymer has a carbon content higher than that of the resin component, does not include silicon atom in a molecule, and is crosslinkable due to an acid generated from the acid generator. The uncrosslinked embedded section is crosslinked in an area around an interface with the first pattern to form an array structure. The first pattern, a first crosslinked section, the uncrosslinked embedded section, and a second crosslinked section are repeatedly arranged in the array structure in this order. The first pattern and the uncrosslinked embedded section are removed to form a second pattern.

Pattern-forming method

An antireflection film-forming composition which has excellent applicability, is significantly inhibited from generating ultrafine microbubbles, gives an antireflection film capable of sufficiently reducing the standing-wave effect, and has excellent solubility in water and an alkaline developing solution. The antireflection film-forming composition contains: (A) a copolymer (salt) of a sulfonic acid group-containing acrylamide derivative represented by, e.g., 2-(meth)acrylamido-2-methylpropanesulfonic acid and a fluoroalkyl group-containing acrylic acid ester derivative represented by, e.g., 2,2,3,3,3-pentafluoropropyl (meth)acrylate; and (B) a surfactant whose 0.1 wt. % aqueous solution has a surface tension as measured at 25&#xb0; C. of 45 mN/m or lower.

Composition for forming antireflection film, layered product, and method of forming resist pattern

An antireflection film-forming composition having excellent coatability, capable of significantly inhibiting production of fine microbubbles and capable of forming an antireflection film with a sufficiently decreased standing-wave effect, and having excellent solubility in water and alkaline developers is provided. The composition comprises a polymer having at least one polymerization unit with a hydroxyl group-containing organic group on the side chain, preferably a copolymer having at least one recurring unit of the following formula (2) and/or at least one recurring unit of the following formula (3) and at least one recurring unit of the following formula (4), and/or a salt thereof: wherein Rand Rrepresent a hydrogen atom, a fluorine atom, or a monovalent organic group, m is an integer of 1-20, and A represents a divalent coupling means.

Composition for forming antireflection film, laminate, and method for forming resist pattern

Novel compounds acetoxymethylacenaphthylene and hydroxymethylacenaphthyleneare disclosed. A polymer prepared from these novel compounds containing a structural unit of the formula (3),wherein Ris a hydrogen atom and Rand Rindividually represent a monovalent atom or a monovalent organic group is also disclosed. The polymer is suitable as a component for an antireflection film-forming composition exhibiting a high antireflection effect and not causing intermixing with a resist film.

Acenaphthylene derivative, polymer, and antireflection film-forming composition

Radiation sensitive refractive index changing composition and refractive index changing method

A polyorganosiloxane-based composition for film formation which gives a film having low dielectric constant and high modulus of elasticity and useful as an interlayer insulating film in semiconductor devices and the like. The composition for film formation comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of an alkali catalyst, at least one member selected from the group consisting of compounds (1) represented by R Si(OR ) (wherein R represents hydrogen, fluorine, or a monovalent organic group; R represents a monovalent organic group; and a Is an integer of 1 or 2), compounds (2) represented by Si(OR ) (wherein R represents a monovalent organic group), and compounds (3) represented by R (R O) Si&mdash;(R ) &mdash;Si(OR ) R &lsqb;wherein R to R may be the same or different and each represent a monovalent organic group; b and c may be the same or different and each are an integer of 0 to 2; R represents oxygen, phenylene, or a group represented by &mdash;(CH ) &mdash;, wherein n is an integer of 1 to 6; and d is 0 or 1&rsqb;; and (B) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of an acid catalyst, at least one member selected from the group consisting of the compounds (1), (2), and (3).

Composition for film formation, method of film formation, and insulating film

Film-forming composition

The present invention is a process for producing a phenylene-containing polymer in the presence of a catalyst system containing a transition metal compound, and a film-forming material comprising the phenylene-containing polymer.

Process for producing phenylene-containing polymer and film-forming material

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Tokyo, Japan

Keiji Konno