Canon Anelva Corporation

Anelva Corporation

Other

Nec Corporation

Keiji Ishibashi

Masahiko Tanaka

Atsushi Masuda

Akira Kumagai

Yoshiaki Daigo

Manabu Ikemoto

Hideki Matsumura

Minoru Karasawa

Shigeru Mori

Katsuhisa Yuda

Hironobu Umemoto

Hideki Sunayama

Koji Yoneyama

Kazutaka Yamada

The present invention provides an epitaxial film forming method for epitaxially growing a high-quality group III nitride semiconductor thin film on an &#x3b1;-AlOsubstrate by a sputtering method. In the epitaxial film forming method according to an embodiment of the present invention, when an epitaxial film of a group III nitride semiconductor thin film is to be formed on the &#x3b1;-AlOsubstrate arranged on a substrate holder provided with a heater electrode and a bias electrode of a sputtering apparatus, in a state where the &#x3b1;-AlOsubstrate is maintained at a predetermined temperature by the heater electrode, high-frequency power is applied to a target electrode and high-frequency bias power is applied to a bias electrode and at that time, the powers are applied so that frequency interference between the high-frequency power and the high-frequency bias power does not occur.

Epitaxial film forming method, sputtering apparatus, manufacturing method of semiconductor light-emitting element, semiconductor light-emitting element, and illumination device

The present invention provides: an epitaxial film forming method capable of fabricating a +c-polarity epitaxial film made of a Group III nitride semiconductor by sputtering; and a vacuum processing apparatus suitable for this epitaxial film forming method. In one embodiment of the present invention, a Group III nitride semiconductor thin film is epitaxially grown by sputtering on an &#x3b1;-AlOsubstrate heated to a desired temperature by using a heater. First, the &#x3b1;-AlOsubstrate is disposed on a substrate holder including the heater in such a way that the &#x3b1;-AlOsubstrate is disposed away from the heater by a predetermined distance. Then, an epitaxial film of a Group III nitride semiconductor thin film is formed on the &#x3b1;-AlOsubstrate in the state where the &#x3b1;-AlOsubstrate is disposed away from the heater by the predetermined distance.

Epitaxial film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device

A vacuum processing apparatus, including a reactor and a partitioning plate having a plurality of through-holes through which radicals are allowed to pass and separating the reactor into a plasma generating space and a substrate process space, the process, such as a film deposition process, being carried out on a substrate placed in the substrate process space by delivering a gas into the plasma generating space for generating a plasma, producing radicals with the plasma thus generated, and delivering the radicals through the plurality of through-holes on the partitioning plate into the substrate process space. The partitioning plate includes a partitioning body having a plurality of through-holes and a control plate disposed on the plasma generating space side of the partitioning body and having radical passage holes in the positions corresponding to the plurality of through-holes on the partitioning plate.

Vacuum processing apparatus

In a hydrogen atom generation source in a vacuum treatment apparatus which can effectively inhibit hydrogen atoms from being recombined due to contact with an internal wall surface of a treatment chamber of the vacuum treatment apparatus and an internal wall surface of a transport passage, and being returned into hydrogen molecules, at least a part of a surface facing a space with the hydrogen atom generation source formed therein of a member surrounding the hydrogen atom generation source is coated with SiO. In a hydrogen atom transportation method for transporting hydrogen atoms generated by the hydrogen atom generation source in the vacuum treatment apparatus to a desired place, the hydrogen atoms are transported via a transport passage whose internal wall surface is coated with SiO.

Hydrogen atom generation source in vacuum treatment apparatus, and hydrogen atom transportation method

A heating element CVD system wherein one or a plurality of connection terminal holders is placed in the processing container, and each of the connection terminal holders holds a plurality of connection terminals. Each of the connection terminals connects the heating element to the electric power supply mechanism electrically such that a connection region of the heating element connected to the connection terminal is not exposed to a space in the processing container.

Heating element CVD system and connection structure between heating element and electric power supply mechanism in the heating element CVD system

A silicon oxide film formation method enhances the efficiency of generating atomic oxygen and improves film quality of a silicon film (SiOfilm) in forming the silicon oxide film using an RS-CVD system. Nitrogen atom containing gas (Ngas, NO gas, NO gas, NOgas or the like) is added to oxygen atom containing gas (Ogas, Ogas or the like) introduced into a plasma generating space in a vacuum container to produce plasmas with these gases and to thereby increase the quantity of atomic oxygen generated by the plasmas in the plasma generating space.

Silicon oxide film formation method

The present invention provides a method for efficiently and completely removing a film deposited inside a film forming chamber. In addition, the invention provides a CVD apparatus using heating element which an in-situ cleaning method can be applied and its in-situ leaning method. The removal method of this invention comprises a method for removing a film deposited inside a chamber which can be exhausted and/or on a member placed in the chamber, wherein after the chamber is exhausted, a heating element, at least the surface of which is composed of platinum, disposed in said vacuum chamber, is heated at a prescribed temperature and a cleaning gas which is decomposed and/or activated by the heating element to generate an activated species that converts the deposited film into gaseous substance is introduced into the chamber.

Hot element CVD apparatus and a method for removing a deposited film

A heating element CVD device capable of providing a high productivity and decomposing and/or activating the material gas led into a processing container by a heating element and stacking film on a substrate disposed in the processing container, wherein the connection part area of the heating element to a connection terminal for connecting the hearing element to a power supply mechanism is not exposed to a space inside the processing container, specifically, the connection part area is covered by a cylindrical body or a platy body covering the connection part area while providing a space part thereof from the hearing element, or the connection part area allows the space part to be present in a space thereof from the connection terminal and is covered by the cylindrical body or platy body covering the connection part area while providing the space part in a space thereof from the heating element, and hydrogen gas is led from the connection terminal side into the processing container through the space part, whereby the portion of the heating element near the connection part to the power supply mechanism can be prevented from being deteriorated by the material gas, the material gas can be prevented from reacting with cleaning gas during the cleaning for removing the film adhered to the inside of the processing container, the service life of the heating element can be increased, and a film forming environment can be stabilized.

Heating element CVD system

A method for efficiently and completely removing a film deposited inside a film forming chamber and an in-situ cleaning method of a hot element CVD apparatus. A hot element is disposed in a chamber is heated up to a temperature of 2000&deg; C. or higher after the chamber is exhausted. Thereafter a cleaning gas which is decomposed and/or activated by the hot element to generate an activated species that converts the deposited film into gaseous substance is introduced into the chamber.

Method for removing a deposited film

A combined RF-DC magnetron sputtering method stops the production of tracking arcs and promotes the consistent manufacture of thin films during the manufacture of thin films by such RF-DC magnetron sputtering. Magnets are placed behind the target . RF and DC power are simultaneously supplied to the target to produce a plasma, and sputtering is used to manufacture a thin film on a substrate facing the target. The supply of RF and DC power to the target is simultaneously and periodically stopped. The time that the power is supplied is shorter than the time needed to produce tracking arcs. The RF and DC power is both supplied and stopped simultaneously, and RF and DC power is intermittently supplied to the target.

Growing community of inventors

Kawasaki, Japan

Keiji Ishibashi