Nec Corporation

Nec Electronics Corporation

Other

Sumitomo Chemical Company, Limited

Keiji Hirano

Hidemitsu Aoki

Noriyuki Nakayama

Tatsuya Koito

Kenichi Tokioka

Masayuki Takashima

Hiroaki Tomimori

Kunio Sano

Yoshiko Kasama

Shinya Nakamoto

Junji Okamura

Tsutomu Taira

Mitsuaki Ikeda

Tatsuya Koita

A stripping composition comprising (a) an anticorrosive agent, (b) a stripping agent and (c) a solvent, wherein the anticorrosive agent (a) is a heterocyclic compound having a nitrogen atom-containing six-membered ring.

Stripping agent composition and method of stripping

According to this invention, residues generated after selectively removing a low-dielectric-constant film such as SiOC can be effectively removed without damage on an insulating film or metal film. Specifically, residuesandgenerated after forming an interconnect trench in an SiOC filmare removed using a fluoride-free weak alkaline amine stripper. After the removing step, the wafer is rinsed with isopropyl alcohol and then dried without drying with pure water.

Preparation process for semiconductor device

A stripping composition comprising at least one of alcohols having an ether-bond in the molecule thereof as component (a), and an anticorrosive as component (b). Furfuryl alcohol or tetrahydrofurfuryl alcohol is preferable as component (a).

Stripping composition

The present invention provides a method of treating waste water including nitrogen-containing organic compounds to convert these compounds into harmless gases without performing a post-treatment. The method comprises spraying waste water in a heated space to gasify the waste water into waste gas, and oxidizing the waste gas by contacting it with a catalyst to convert the nitrogen-containing organic compounds into harmless gases. An apparatus for treating waste water using the method is also disclosed.

Method of treating waste water and apparatus for treating waste water using the method

According to the present invention, there is provided a method for nonbiologically treating an chlorinated organic compound contained in an environment polluted with the chlorinated organic compound, which comprises the step of introducing silicon into the environment to dechlorinate the chlorinated organic compound.

Method for treating chlorinated organic compound

Method for the remediation of polluted soils by using microorganisms under anaerobic conditions wherein the degradation action of pollutants such as tetrachloroethylene, nitrate or nitrite by microorganisms under anaerobic conditions is induced or promoted by the addition of silicon to said polluted soils, without any risk of secondary pollution.

Methods for the remediation of polluted soils

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Tokyo, Japan

Keiji Hirano