Canon Kabushiki Kaisha

The University of Tokyo

Keiji Hirabayashi

Noriko Kurihara

Keiko Ikoma

Yasushi Taniguchi

Kiyoshi Yamamoto

Susumu Ito

Tohru Den

Keishi Saito

Tatsuo Takeuchi

Akio Maruyama

Masao Sugata

Yoshihiro Oguchi

Hiroshi Satomura

Masaaki Matsushima

Yoichi Hirose

Kuniji Osabe

Takeo Tsukamoto

Masahiko Okunuki

Toshiaki Yoshikawa

Shigeru Hashimoto

Kenji Ando

Daisuke Arai

Hiroyuki Kubo

Atsushi Yamagami

Nobuo Watanabe

Koji Teranishi

Shintaro Yagi

Susumu Itoh

Hideo Akiba

Kunio Shiota

Yusuke Owaki

Shinji Fukui

Toshinao Tatsuno

Koji Hayakawa

Mitsuko Hirosawa-Takamori

A substrate holding board includes a first layer and a second layer forming an interfacial surface with the first layer. The first layer and the second layer contain diamond-like carbon. A refractive index of the first layer in a wavelength is higher than a refractive index of the second layer in the wavelength. A distance from the second layer to a topmost surface of the substrate holding board is smaller than a thickness of the first layer.

Substrate holding board, manufacturing method of device, and exposure device

A wafer chuck includes a base made of a ceramic containing silicon carbide. The base has an oxidation-treated layer, and a film made of diamond-like carbon (DLC) is formed on an outermost surface of the base.

Wafer chuck, method for producing the same, and exposure apparatus

Provided is a method of producing an optical element forming mold, the method including forming a ta-C filmon a mold matrixfor an optical element forming mold by an FCVA process, in which the mold matrixis kept at a floating potential, a voltage is applied to a mold matrix-holding memberfor holding the mold matrix via insulating members (), and a magnetinternally provided in the mold matrix forms a magnetic field for applying a magnetic force in a normal direction of a transfer surface of the mold matrix so as to follow a magnetic force applied by a filter coil, thereby homogenizing the film quality.

Method of producing optical element forming mold and optical element forming mold

The invention provides a method for producing an orexin neuron by culturing a pluripotent stem cell or a neural progenitor cell in the presence of N-acetyl-D-mannosamine and optionally in the presence of at least one inhibitor selected from the group consisting of a Sirtuin 1 inhibitor and an O-linked &#x3b2;-N-acetylglucosamine transferase inhibitor. The invention also provides a therapeutic agent for narcolepsy or eating disorders, such as anorexia, containing N-acetyl-D-mannosamine, which is based on the induction of orexin neuron in vivo.

Methods for inducing orexin neurons and agent for treating narcolepsy or eating disorder

A diamond product comprising a semiconductor layer having an outer surface region of graphite in contact with the metal electrode to form an ohmic junction with the metal electrode, wherein the outer surface region of graphite has a thickness of at least about 12 &angst;.

Process of making diamond-metal ohmic junction semiconductor device

A diamond covered member which has a diamond crystal layer is formed by vapor phase synthesis on a surface of a substrate. The process comprises depositing plate-shaped diamond crystals by CVD at a carbon source concentration ranging from 0.01 to 10% at an atomic ratio of oxygen to carbon (O/C) of 0.5.ltoreq.(O/C).ltoreq.1.2 in a starting gas. The crystals may also be deposited by a burning flame method using an oxygen-acetylene flame at a molar ratio of oxygen to acetylene in a main starting gas in the range of 0.9.ltoreq.(O.sub.2 /C.sub.2 H.sub.2).ltoreq.1.0. The plate-shaped diamond crystals are grown to coalesce into a film to form the diamond crystal layer.

Process for producing diamond covered member

In a method for forming a diamond film by a high-frequency plasma CVD method, an inductive coupling discharge is used and the frequency of a high-frequency wave is set in the range of from 40 to 250 MHz, whereby a starting gas containing carbon is decomposed in a plasma state and a diamond film is formed on a substrate.

Method for forming diamond film

There is disclosed a mold for pressing molding of an optical element of glass. On at least the molding surface of the mold base of the mold, there is formed a mixing layer which consists of carbon and at least one of the elements constituting the mold base. The atomic percentage of carbon increases toward the molding surface and decreases toward the mold base, while the atomic percentage of the other element decreases toward the surface and increases toward the mold base. The mold may contain an intermediate layer at least on the molding surface of the mold base.

Mold for forming an optical element

A diamond electronic device constituted of a diamond crystal formed on a substrate comprises a diamond crystal having the ratio (h/L) of length (h) of the diamond crystal in direction substantially perpendicular to the face of the substrate to length (L) of the diamond crystal in direction parallel to the face of the substrate ranging from 1/4 to 1/1000 and an upper face of the diamond crystal making an angle of from substantially 0.degree. to 10.degree. to the face of the substrate, and a semiconductor layer and an electrode layer provided on the diamond crystal, wherein the diamond crystal serves as a heat-radiating layer.

Diamond electronic device and process for producing the same

A diamond crystal forming method with which a diamond crystal is formed on a substrate by a sputtering process uses high-frequency energy in the frequency range of 40 MHz to 250 MHz to form plasma.

Diamond crystal forming method

A diamond crystal comprises a tabular diamond crystal formed on a substrate by gas phase synthesis, wherein the diamond crystal has a ratio of thickness to width of from 1:4 to 1:1,000 and the surface of the substrate on which the diamond crystal has been formed and the top surface of the diamond crystal are at an angle ranging from 0.degree. to 10.degree..

Diamond crystal and method for forming the same

A diamond semiconductor device has a pn junction formed by a p-type diamond semiconductor portion containing boron as an impurity and an n-type diamond semiconductor portion containing lithium as an impurity. The diamond semiconductor is formed by a diamond crystal growth on a single nucleation site on an insulating substrate. Electroluminescene takes place in the diamond crystal.

Monocrystalline diamond semiconductor device and several electronic

A diamond covered member is provided which has a diamond crystal layer formed by vapor phase synthesis on a surface of a substrate, the diamond crystal layer being constituted of plate-shaped diamond crystals at least at an initial stage of crystal growth, and being a polycrystal film formed by growth and coalescence of the plate-shaped diamond crystals, and the polycrystal film being uniformly oriented and having surface roughness (Rmax) of not larger than 0.2 .mu.m. A process for producing the diamond covered member is also provided. The diamond covered member has high hardness, high thermal conductivity, and high chemical stability.

Diamond covered member and process for producing the same

A tabular diamond crystal is formed on a substrate by gas phase synthesis, wherein the diamond crystal has a ratio of thickness to width of from 1:4 to 1:1,000 and the surface of the substrate on which the diamond crystal has been formed and the top surface of the diamond crystal are at an angle ranging from 0.degree. to 10.degree..

Growing community of inventors

Tokyo, Japan

Keiji Hirabayashi