Renesas Technology Corp.

Mitsubishi Denki Kabushiki Kaisha

Keiichiro Wakamiya

Toshihiro Iwasaki

Michitaka Kimura

Yasumichi Hatanaka

Satoshi Yamada

There is described an improved semiconductor device of chip-scale package (CSP) comprising posts provided on respective electrode pads of a semiconductor chip, and solder balls which are provided on the respective posts as external terminals after the semiconductor chip has been encapsulated with resin while the posts are held in a projecting manner. The semiconductor device prevents occurrence of cracks, which would otherwise be caused by stress which is induced by a difference in coefficient of linear expansion between the semiconductor chip and the sealing resin and is imposed on the posts. In order to alleviate the stress imposed on the posts, a stress-absorbing layer formed from a metal layer having a low Young's modulus, such as gold (Au) or palladium (Pd), is interposed in the middle of each of the posts.

Semiconductor device

A semiconductor device includes a semiconductor chip, and a circuit substrate disposed such that the circuit substrate faces the semiconductor chip and is electrically connected to the semiconductor chip through a connection conductor. A pad electrode and a terminal electrode are formed on a surface of the semiconductor chip and a surface of the circuit substrate, respectively. The connection conductor is connected between the pad electrode and the terminal electrode. The surface of the semiconductor and the surface of the circuit substrate face each other. A conductive dummy pattern is formed on the facing surface of the semiconductor chip or the circuit substrate. A space between the facing surfaces is filled with nonconductive resin. With this arrangement, it is possible to make uniform the temperature distribution between the facing surfaces, thereby making the temperature and the viscosity of the nonconductive resin uniform to reduce attenuation of ultrasonic waves.

A semiconductor device includes a first substrate, a second substrate, a plurality of conductors, and supporting members. The first substrate has a plurality of electrode portions disposed on one side thereof. The second substrate has a plurality of electrode portions disposed on one side thereof. The conductors are for connecting the plurality of electrode portions of the first substrate to the plurality of electrode portions of the second substrate. The supporting members supporting the first substrate and the second substrate are disposed on a location where resonance caused by ultrasonic oscillation externally supplied is restrained in the state where the first substrate is connected to the second substrate. The supporting members prevent irregular oscillation and resonance caused by the ultrasonic oscillation.

The semiconductor device has a flip chip structure. The chip is electrically connected to the chip mounting member via function bumps provided on the chip. Dummy bumps acting against a local bending force of the chip are interposed between the chip and the chip mounting member.

A semiconductor device comprises an insulated circuit board which includes a terminal electrode disposed on the rear surface or at a plane between the rear surface and the front surface thereof. An opening is formed in the insulating circuit board in such a manner as to reach the terminal electrode. A semiconductor substrate including an electrode pad is mounted on the insulated circuit board in such a manner that the electrode pad faces to the terminal electrode. A non-conductive resin is interposed in a gap between the semiconductor substrate and the insulated circuit board. The electrode pad on the semiconductor substrate is electrically connected to the terminal electrode via a connecting conductor inserted in the opening.

Growing community of inventors

Tokyo, Japan

Keiichiro Wakamiya