Hitachi Maxell, Limited

Keiichiro Uenae

Masayuki Yamada

Tsunemi Ohiwa

Kazunobu Matsumoto

Akira Inaba

Naokage Tanaka

Masaaki Yoshitake

Katsumi Takiguchi

Souichi Ogawa

[Objectives] The present invention provides a non-aqueous secondary battery in which a material containing Si and O as constituent elements is used in a negative electrode. The present invention provides a non-aqueous secondary battery having good charge discharge cycle characteristics, and suppressing the battery swelling associated with the charge and the discharge. Also, the present invention relates to a negative electrode that can provide the non-aqueous secondary battery. [Solution] The negative electrode includes a negative electrode active material, including a composite of a material containing Si and O as constitution elements (atom ratio x of O to Si is 0.5&#x2266;x&#x2266;1.5) in combination with a carbon material, and graphite. The graphite has an average particle diameter dg (&#x3bc;m) of 4 to 20 &#x3bc;m. The material containing Si and O as constitution elements has an average particle diameter ds (&#x3bc;m) of 1 &#x3bc;m or more. The ratio ds/dg (i.e., ds to dg) is 0.05 to 1. The material containing Si and O as constitution elements has a crystallite diameter of 50 nm or less, the crystallite diameter is calculated from a half width at a (220) plane of Si obtained by an X-ray diffraction method, using Scherrer Formula. In 100 mass % of the composite of the material containing Si and O as constitution elements, and the carbon material, a ratio of the material containing Si and O as constitution elements is 70 to 95 mass %.

Negative electrode for non-aqueous secondary battery, and a non-aqueous secondary battery

In a dual insulation thin film type electroluminescence device comprising a first insulation layer, a light emitting layer and a second insulation layer between a transparent electrode layer and a back electrode layer, a tantalum oxynitride layer is provided between the transparent electrode layer and the first insulation layer to prevent increase of the resistance in the transparent electrode and to prevent increase of current leakage in the insulation layer so that a high luminescence can be achieved.

Dual insulation oxynitride blocking thin film electroluminescence

Growing community of inventors

Kyoto, Japan

Keiichiro Uenae