Sumitomo Electric Industries, Limited

Rikagaku Kenkyusho

Keiichiro Tanabe

Naoji Fujimori

Akihiko Ikegaya

Yuichiro Seki

Yoshiyuki Yamamoto

Toshiya Takahashi

Nobuhiro Ota

Takahiro Imai

Akihoko Ikegaya

Hideaki Nakahata

Shin-ichi Shikata

Takashi Tsuno

Katsuko Harano

Koji Nitta

Norio Okada

Shinji Inazawa

Shoichiro Sakai

Atsushi Fukunaga

Koma Numata

Susumu Yoshimoto

Yoshiaki Kumazawa

Tsuneo Urisu

Eiko Itani

Hideo Kitamura

Shuji Asaka

Noaji Fujimori

Hisaharu Sakae

Provided is a power supply system capable of being used in a well over a long period of time. A power supply system for a well according to the present invention includes a secondary battery having an operating temperature range including a temperature of the inside of a well and supplying power to a device installed in the well; and a charge-discharge mechanism for charging and discharging the secondary battery, and is installed in the well. The secondary battery to be used in the power supply system may be a molten salt battery, and may include a sensor and communication apparatus.

Power supply system for well

A substrateis set in a film-forming apparatus, such as a metal organic vapor phase epitaxy system, and a GaN buffer film, an undoped GaN film, and a GaN filmcontaining a p-type dopant are successively grown on the substrateto form an epitaxial substrate E. The semiconductor filmalso contains hydrogen, which was included in a source gas, in addition to the p-type dopant. Then the epitaxial substrate Eis placed in a short pulsed laser beam emitter. A laser beam Lis applied to a part or the whole of a surface of the epitaxial substrate Eto activate the p-type dopant by making use of a multiphoton absorption process. When the substrate is irradiated with the pulsed laser beam Lwhich can induce multiphoton absorption, a p-type GaN filmis formed. There is thus provided a method of optically activating the p-type dopant in the semiconductor film to form the p-type semiconductor region, without use of thermal annealing.

Method for forming p-type semiconductor region, and semiconductor element

This polishing apparatus permits for polishing of hard-material coated complex films that traditionally have been difficult to polish due to the hardness of the films, the fragility of the substrate, and the inherent distortion of the film. The polishing apparatus includes a rotary turn-table, a holder for a wafer having the film, a shaft connected to the center of the holder for transmitting rotation and pressure to the holder and permitting the holder to incline, an arm rotatably supporting the holder, a cylinder for applying pressure to the center of the shaft, a driving device for rotating the shaft, and at least one auxiliary shaft. The auxiliary shaft pushes peripheral points along a diameter of the holder in order to impart a swaying motion on the holder.

Polishing apparatus for polishing a hard material-coated wafer

A method of producing and polishing a hard-material-coated wafer. A hard-material film is disposed on a substrate to form the wafer and provide the wafer with a convex shape. A surface of the substrate is fixed on a holder of a polishing machine having a whetstone turn-table. The holder is rotated about its axis, and the whetstone turn-table is revolved about its shaft. The convex film surface of the hard-material film is polished on the whetstone turn-table while the inclination angle of the holder relative to the turn-table is changed. In this way, the convex film surface is polished either from its center to its periphery or from its periphery to its center.

Method of polishing a hard material-coated wafer

An object of the invention is to provide a window for an optical use having excellent transmission property over a wide range of from infra-red to vacuum ultraviolet as well as excellent baking resistance and capable of being fitted to an ultra-high vacuum apparatus and a process for the production of the same. This object can be attained by a window for an optical use comprising a diamond as a window material, a flange for a vacuum apparatus, a frame for bonding the diamond to the flange and the specified adhesive material for bonding the frame and diamond, and a process for the production of the window for an optical use comprising a step of preparing a diamond plate, a step of fitting a frame to a flange and bonding the diamond plate to the frame through an adhesive material. The benefits can be enlarged by suitably selecting the shape, material, etc. of the frame.

Window for an optical use and a process for the production of the same

A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.

Diamond wafer and method of producing a diamond wafer

No wide bulk diamond wafer exists at present. A wide diamond-coated wafer is proposed instead of the bulk diamond wafer. Diamond is heteroepitaxially deposited on a convex-distorted non-diamond single crystal substrate by a vapor phase deposition method. In an early step, a negative bias is applied to the substrate. In the case of a Si substrate, an intermediate layer of .beta.-SiC is first deposited on the Si substrate by supplying a low carbon concentration material gas. Then the carbon concentration is raised for making a diamond film. The convex-distorted wafer is stuck to a holder having a shaft which is capable of inclining to the holder. The wafer is pushed to a turn-table of a polishing machine. The convex diamond wafer can fully be polished by inclining the holder to the shaft. A wide distorted mirror wafer of diamond is produced. Fine wire patterns can be made on the diamond mirror wafer by the photolithography.

Wafer and method of producing same

An X-ray generation apparatus has an anticathode which includes a high thermal conductive substrate and a target for generating X-rays by irradiation with electrons. The target penetrates the high heat conductive substrate. Improved cooling efficiency and durability of the anticathode is obtained as well as miniaturization and simplification of the X-ray generation apparatus is achieved.

X-ray generation apparatus

A diamond wafer including a substrate and a (111) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (111) oriented film is produced by supplying a lower carbon concentration gas and a higher carbon concentration gas alternately. The lower carbon concentration means 0% to 1% of the atomic ratio C/H. The higher carbon concentration means 1% to 8% of the atomic ratio C/H. More than 40% of layered defects are either parallel with or slanting at an angle less than 5 degrees to the surface. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.

Wafer and method of producing a wafer

High quality diamond excellent in crystalline property as well as transparency, can be synthesized at a high growth speed by a process which comprises using, as a raw material gas, a mixed gas of hydrogen gas A, an inert gas B, a carbon atom-containing gas C and an oxygen atom-containing inorganic gas D in such a proportion as satisfying the following relationship by mole ratio:

Highly crystalline diamond

A hard material-coated wafer that having a distortable substrate and a hard material film deposited thereon by a CVD method is provided. The substrate is substantially flat while in a free-standing state. However, deposition of the hard material film having a Vickers hardness of more than Hv3000 on the substrate causes the substrate to distort into a generally convex-shape. Specifically, the wafer is distorted to the film side with a distortion height H of -150 .mu.m to -2 .mu.m. The resulting wafer can have a total thickness that ranges from 0.1 mm to 2.1 mm; and a diameter that is bigger than 25 mm. Moreover, more than 50% of the film can be polished to a roughness less than Rmax 50 nm and Ra 20 nm.

Hard material-coated wafer, method of making same, polishing apparatus

A window material, which has a high thermal conductivity material layer having a thermal conductivity of at least 10 W/cm.multidot.K and which has a cooling medium flow path on or in the high thermal conductivity material layer, has a high heat-dissipating property and a high transmittance.

Window and preparation thereof

A substrate, which has a high thermal conductivity material layer having a thermal conductivity of at least 10 W/cm.multidot.K and which has a cooling medium flow path on or in the high thermal conductivity material layer, has a high heat-dissipating property.

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Hyogo, Japan

Keiichiro Tanabe