Mitsubishi Electric Corporation

Jfe Mineral Company, Ltd.

Mitsubishi Denki Kabushiki Kaisha

Keiichiro Nakamura

Hitoshi Sadakuni

Takuya Otsuka

Osamu Kisanuki

Masanori Osumi

Katsuhiko Nakamura

Hitoshi Taniguchi

Naochika Yamamoto

Yukinori Koike

Yuki Hyodo

Kiyoshi Sonoda

Yosuke Iwasaki

Takahide Watanabe

Masazumi Yamamoto

Hiroki Sanuki

Kazuhiko Echizenya

Yohei Ono

A method for producing a piezoelectric single crystal ingot shows small variation in the concentration of PbTiOin the growth direction of single crystal. A complete solid solution-type piezoelectric single crystal ingot is produced by using the Bridgman method, including: filling a starting material, wherein a relaxor having a compositional formula Pb(B, B)Ois blended with lead titanate having a composition PbTiOto give a preset composition, into a crucible for growth; heating to the melting temperature to give a melted liquid layer; then moving the crucible for growth toward the low temperature side; and thus starting one-direction solidification from the lower part of the crucible to thereby produce a single crystal. During solidification, the feedstock containing the relaxor and lead titanate having a maximum grain size &#x2264;3 mm is continuously supplied into the crucible.

Method for producing piezoelectric single crystal ingot and piezoelectric single crystal ingot

Provided is an aluminum nitride single crystal which is easier to cut than conventional ones. The presently disclosed aluminum nitride single crystalhas a matrix region M constituting a matrix of the aluminum nitride single crystal, and at least one domain region D included in the matrix region M.

Aluminum nitride single crystal

A gas insulated switching apparatus includes a transformer line unit and a power transmission and reception line unit adjacent to each other. The power transmission and reception line unit includes two cable heads. The cable heads are arranged at an interval between units in an extension direction in which a bus-bar extends, and the cable head is disposed in a space behind the transformer line unit.

Gas insulated switching apparatus

Gas insulated switchgear

A gas insulated electrical apparatus in which electric devices for three phases are housed within a common gas-filled vessel includes a first and a second curved wall spaced apart from each other by a first distance and a third and a fourth curved wall connected between the first and second curved walls and spaced apart from each other by a second distance smaller than the first distance to define a substantially oval cross-sectional shape. The electric devices are arranged in a row extending between the first and second walls. The first and second curved walls may have a first radius of curvature and the third and fourth curved walls may have a second radius of curvature larger than the first radius of curvature.

Gas insulated electrical apparatus

Growing community of inventors

Tokyo, Japan

Keiichiro Nakamura