Sumco Corporation

Keiichiro Mori

Makoto Takemura

Takahiro Nagasawa

Kaori Hashimoto

Chie Hide

Motoi Kurokami

A method of evaluating a semiconductor wafer by a laser surface inspection device. The method includes performing evaluation of the wafer by detecting a defect kind of one of a deposit and a non-deposited convex defect present on a surface of a coating layer as a light point defect based on a plurality of measurement results including three kinds of low incidence angle measurement results obtained by, on the surface of the coating layer, reception of a radiated light radiated by reflection or scattering of a light incident from a first incident system at the surface by three kinds of light receiving systems, and at least one high incidence angle measurement result obtained by reception of a radiated light radiated by reflection or scattering of a light incident from a second incident system at the surface by at least one of the three kinds of light receiving systems.

Method of evaluating semiconductor wafer

The method includes detecting a COP in a surface of a reference wafer with a laser surface inspection apparatus to be calibrated and an apparatus for calibration that obtains an X coordinate position and a Y coordinate position of the COP; determining a COP that is detected as the same COP with a determination criterion that a positional difference between a detected position obtained by the laser surface inspection apparatus to be calibrated and a detected position obtained by the apparatus for calibration on the reference wafer surface is within a threshold range; and calibrating the coordinate position identification accuracy of the laser surface inspection apparatus to be calibrated by adopting the X and Y coordinate positions obtained by the apparatus for calibration as true values of the X and Y coordinate positions.

Method of calibrating coordinate position identification accuracy of laser surface inspection apparatus and method of evaluating semiconductor wafer

Provided is a method of evaluating a silicon wafer, the method including a first determination that determines the presence or absence of an abnormality by inspecting a surface of an evaluation-target silicon wafer with a light scattering type surface inspection device; and a second determination that determines the presence or absence of an abnormality through observing, with an atomic force microscope, a region of the surface of the evaluation-target silicon wafer, where the presence of an abnormality has not been confirmed in the first determination.

Method of evaluating silicon wafer, method of evaluating silicon wafer manufacturing process, method of manufacturing silicon wafer, and silicon wafer

Provided is a method of preparing a sample surface on which a marking is formed, wherein the marking is a local oxide film locally formed on the sample surface, the local oxide film is formed by applying voltage between a probe and the sample surface while a tip of the probe is in contact with the sample surface, and the probe is brought into contact with the sample surface after moisture supply.

Method of preparing sample surface, method of analyzing sample surface, field-enhanced oxidation probe, and scanning probe microscope including field-enhanced oxidation probe

A method of evaluating a semiconductor wafer, which has a polished surface, by using a laser surface-inspection device including light-incident and light-receiving systems, includes evaluating the semiconductor wafer by detecting, as a light point defect, an abnormality of a process-induced defect and a surface-adhered foreign matter present on the polished surface of the semiconductor wafer, on the basis of measurement result obtained by directing incident light to the polished surface of the semiconductor wafer from one light-incident system and receiving, with a first light-receiving system, radiation light which has been radiated by the incident light being reflected or scattered by the polished surface, measurement result obtained by receiving the radiation light with a second light-receiving system, and measurement result obtained by receiving the radiation light with a third light-receiving system, and at least one of a light-receiving angle and polarization selectivity differs among the first, second and third light-receiving systems.

Semiconductor wafer evaluation method and semiconductor wafer

A method of evaluating a semiconductor wafer, which has a polished surface, by using a laser surface-inspection device including incident and light-receiving systems, includes evaluating the semiconductor wafer by detecting, as a light point defect, an abnormality of a process-induced defect and a surface-adhered foreign matter present on the polished surface of the semiconductor wafer, on the basis of measurement result obtained by directing incident light to the polished surface of the semiconductor wafer from one incident system and receiving, with a first light-receiving system, radiation light which has been radiated by the incident light being reflected or scattered by the polished surface, measurement result obtained by receiving the radiation light with a second light-receiving system, and measurement result obtained by receiving the radiation light with a third light-receiving system, and at least one of a light-receiving angle and polarization selectivity differs among the first, second and third light-receiving systems.

The method of evaluating an epitaxial wafer includes performing evaluation of an epitaxial wafer by detecting, as a light point defect, an abnormal substance selected from the group consisting of a defect and a surface deposit of an epitaxial wafer to be evaluated with a surface inspection apparatus including two types of incidence systems with different incidence angles and two types of light receiving systems with different light receiving angles, based on two types of measurement results.

Method of evaluating epitaxial wafer

To provide a cleaning method which makes it possible to reduce alkaline component mixing in an ozone cleaning solution, thereby preventing impairment of cleaning ability of ozone. In the cleaning method, before chuck members retain another workpiece having previously been dipped in an ozone cleaning solution in an ozone cleaning tank, alkaline component attached to part of transfer arms and the chuck members is removed by cleaning, thereby preventing the alkaline component from mixing into the ozone cleaning solution.

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Saga, Japan

Keiichiro Mori