Tokuyama Corporation

Keiichiro Hironaka

Toru Kinoshita

Toru Nagashima

A substrate includes aluminum nitride, wherein the aluminum nitride substrate has on at least a surface thereof an aluminum nitride single-crystal layer having as a principal plane a plane that is inclined 0.05&#xb0; to 0.40&#xb0; in the m-axis direction from the (0001) plane of a wurzite structure.

Aluminum nitride substrate and group-III nitride laminate

A production method of aluminum based group III nitride single crystal includes a reaction step, wherein a halogenated gas and an aluminum contact at 300&#xb0; C. or more to 700&#xb0; C. or less, producing a mixed gas including an aluminum trihalide gas and an aluminum monohalide gas; a converting step, wherein the aluminum monohalide gas is converted to a solid by setting a temperature of the mixed gas equal to or higher than a temperature to which a solid aluminum trihalide deposit, and lower by 50&#xb0; C. or more than a temperature to which halogenated gas and aluminum contact in the reaction step; a separation step, wherein the aluminum trihalide gas is removed; and a crystal growth step, wherein the aluminum trihalide gas is used for an aluminum based group III nitride single crystal raw material, keeping its temperature equal to or higher than a temperature of the converting step.

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Yamaguchi, Japan

Keiichiro Hironaka