Murata Manufacturing Co., Ltd.

National Institute of Advanced Industrial Science and Technology

National Institute of Advanced Industrial Science

Keiichi Umeda

Hiroshi Yamada

Takehiko Kishi

Toshio Nishimura

Morito Akiyama

Takashi Hase

Atsushi Honda

Toshimi Nagase

Hideki Kawamura

Takashi Miyake

Keisuke Takeyama

Keiko Nishikubo

Yasuhiro Aida

Takaaki Mizuno

Hiroaki Kaida

Ville Kaajakari

Hajime Yamada

Yoshihisa Inoue

Masato Uehara

Tadayuki Okawa

Atsushi Tanaka

Taku Kamoto

Takahiro Oguchi

Masashi Omura

Ryo Nakagawa

Teruhisa Shibahara

Ryota Kawai

Yuichi Goto

Masakazu Fukumitsu

Daisuke Nakamura

Kenichi Uesaka

Osamu Nakagawara

Yoshimitsu Ushimi

Toshio Imanishi

Kiyoto Araki

Naoto Yatani

A resonance device is provided for reducing the influence on the resonant frequency of the resonance device of the electric charge borne by an insulating film of a frame. The resonance device includes a resonator including a vibration portion and a frame disposed in at least a part of a vicinity of the vibration portion. The frame includes a holding body and an insulating film, with the holding body holding the vibration portion to vibrate and the insulating film being formed above the holding body. A lower cover is provided having a recess forming at least a part of a space in which the vibration portion vibrates. An inner side surface of the insulating film is disposed at a first distance from an inner surface of a side wall defining the recess.

Resonance device

A MEMS device is provided that includes a piezoelectric film, a first electrode and a second electrode sandwiching the piezoelectric film, a protective film that covers at least part of the second electrode and having a cavity that opens part of the second electrode, a third electrode that contacts the second electrode at least in the cavity and is provided so as to cover at least part of the protective film, and a first wiring layer having a first contact portion in contact with the third electrode.

MEMS device

A gallium nitride structure that includes: a substrate; a gallium nitride layer opposed to the substrate and containing gallium nitride as a main component thereof; and a first electrode between the gallium nitride layer and the substrate. The first electrode includes at least one hafnium layer containing a single metal of hafnium as a main component thereof, and the at least one hafnium layer is in contact with the gallium nitride layer.

Gallium nitride structure, piezoelectric element, method of manufacturing piezoelectric element, and resonator using piezoelectric element

A piezoelectric element includes a first piezoelectric layer which has a first polarization axis direction in a thickness direction of the first piezoelectric layer and is made of AlN. A second piezoelectric layer made of GeAIN which is deposited on the first piezoelectric layer and has a second polarization axis direction opposite to the first polarization axis direction. A first electrode is provided on a side of the first piezoelectric layer which is opposite from a side where the second piezoelectric layer is disposed. A second electrode provided on a side of the second piezoelectric layer which is opposite from a side where the first piezoelectric layer is disposed.

Piezoelectric element, piezoelectric microphone, piezoelectric resonator and method for manufacturing piezoelectric element

A resonator including a lower electrode, an upper electrode, and a piezoelectric film that is formed between the lower electrode and the upper electrode. A MEMS device is provided that includes an upper lid that faces the upper electrode, and a lower lid that faces the lower electrode and that seals the resonator together with the upper lid. A CMOS device is mounted on a surface of the upper lid or the lower lid opposite a surface that faces the resonator. The CMOS device includes a CMOS layer and a protective layer that is disposed on a surface of the CMOS layer opposite a surface that faces the resonator. The upper or lower lid to which the CMOS device is joined includes a through-electrode that electrically connects the CMOS device to the resonator.

A piezoelectric film that includes crystalline AlN; at least one first element partially replacing Al in the crystalline AlN; and a second element doping the crystalline AlN and which has an ionic radius smaller than that of the first element and larger than that of Al.

Piezoelectric thin film and piezoelectric vibrator

A method for manufacturing a resonator that effectively addresses variations in resistivity for each wafer. The method for manufacturing a resonator includes forming a Si oxide film on a surface of a degenerated Si wafer, where the Si oxide film has a thickness set that is based on the doping amount of impurity in the degenerated Si wafer.

Resonator manufacturing method

A piezoelectric thin film composed of aluminum nitride and which contains magnesium and 31 to 120 atomic percent of niobium relative to 100 atomic percent of the magnesium, and the total content of the magnesium and the niobium relative to the total sum of contents of the magnesium, the niobium and the aluminum nitride falls within the range of 10 to 67 atomic percent.

Piezoelectric thin film, manufacturing method therefor, and piezoelectric element

A germanium-containing aluminum nitride piezoelectric film and a method for manufacturing an aluminum nitride piezoelectric film in which a germanium-containing aluminum nitride piezoelectric film is grown on a substrate by sputtering.

Aluminum nitride piezoelectric thin film, piezoelectric material, piezoelectric component, and method for manufacturing aluminum nitride piezoelectric thin film

A piezoelectric element includes a first piezoelectric layer which has a first polarization axis direction in a thickness direction of the first piezoelectric layer and is made of AlN. A second piezoelectric layer made of GeAlN which is deposited on the first piezoelectric layer and has a second polarization axis direction opposite to the first polarization axis direction. A first electrode is provided on a side of the first piezoelectric layer which is opposite from a side where the second piezoelectric layer is disposed. A second electrode provided on a side of the second piezoelectric layer which is opposite from a side where the first piezoelectric layer is disposed.

A resonance device that includes a lower cover formed from non-degenerate silicon; a resonator having a degenerate silicon substrate with a lower surface facing the lower cover, and including first and second electrode layers laminated on the substrate with a piezoelectric film formed therebetween and having a surface opposing an upper surface of the substrate. Moreover, the lower surface of the substrate has an adjustment region where a depth or height of projections and recesses formed on the surface is larger than that in another region of the lower surface of the substrate or is a region where an area of the projections and recesses is larger than that in the other region of the lower surface of the substrate.

Resonance device and manufacturing method therefor

A piezoelectric device that includes: a diaphragm; a supporting part configured to support at least a portion of an end of the diaphragm; a piezoelectric film disposed along a portion supported by the supporting part on the diaphragm, a width of the film along the supported portion being narrower than a width of the portion; a lower electrode disposed at a face of the piezoelectric film on a diaphragm side; and an upper electrode disposed on a face of the piezoelectric film on an opposite side to the diaphragm.

Piezoelectric device

A vibration device that includes a support member, vibration arms connected to the support member and each having an n-type Si layer which is a degenerate semiconductor, and electrodes provided so as to excite the vibration arms, and silicon oxide films containing impurities in contact with a respective lower surface of the n-type Si layers of each vibration arm.

Vibration device and manufacturing method of the same

A piezoelectric vibrator that includes first and second vibration portions that vibrate with mutually reverse phases. Each of the vibration portions includes a silicon layer, a first piezoelectric layer and a second piezoelectric layer that has polarization in an opposite direction to a direction of polarization of the first piezoelectric layer. First and second electrodes are disposed on opposite sides of the second piezoelectric layer. The piezoelectric vibrator has a structure such that a first potential is applied to the first electrode of the first vibration portion and the second electrode of the second vibration portion, and a second potential is applied to the second electrode of the first vibration portion and the first electrode of the second vibration portion.

Piezoelectric vibrator and piezoelectric vibration device

A piezoelectric resonator that includes a single crystal Si layer, a piezoelectric thin film formed from aluminum nitride and provided on the single crystal Si layer, and first and second electrodes provided so as to sandwich the piezoelectric thin film. An element excluding nitrogen and aluminum is doped into the piezoelectric thin film formed from aluminum nitride, and a synthetic acoustic velocity of portions of the piezoelectric resonator other than the single crystal Si layer substantially coincide with the acoustic velocity of the single crystal Si layer.

Growing community of inventors

Nagaokakyo, Japan

Keiichi Umeda