International Superconductivity Technology Center, the Juridical Foundation

Fujitsu Corporation

Other

International Superconductivity Technology Center

Hitachi, Ltd.

Nec Corporation

Japan Oil, Gas and Metals National Corporation

The Chugoku Electric Power Co., Inc.

Sharp Kabushiki Kaisha Corporation

The Furukawa Electric Co., Ltd.

Fujikura Limited

Nippon Telegraph and Telephone Public Corporation

Swcc Showa Cable Systems Co., Ltd.

Mitsui Mineral Development Engineering Co., Ltd.

Superconducting Sensor Technology Corporation

Keiichi Tanabe

Seiji Adachi

Hideo Suzuki

Hironori Wakana

Masahiro Horibe

Yoshinobu Tarutani

Tsunehiro Hato

Akira Tsukamoto

Yoshihiro Ishimaru

Akira Yoshida

Nobuyoshi Inoue

Mutsuo Hidaka

Koji Tsubone

Satoru Hirano

Yasuo Oshikubo

Tsuyoshi Sugano

Kenji Nakanishi

Kenji Hinode

Koichi Nakao

Shuichi Nagasawa

Takato Machi

Kota Katayama

Shizuka Yoshii

Yoshihiro Kitagawa

Hisataka Takenaka

Osamu Michikami

Yujiro Katoh

Masayuki Motoori

Hidehiro Ishikawa

Osami Horibe

Sinya Hasuo

Michitaka Maruyama

Takuya Himi

Atsushi Taguchi

Shuuichi Nagasawa

Tomo Yoshida

Tatsunori Nakamura

A magnetic field measuring element includes a Superconducting QUantum Interference Device magnetic sensors, the first sensor disposed either on a second plane perpendicular to a first plane including a coil surface of the third sensor and which includes the center of the third sensor, or in the vicinity of the second plane, and a second sensor disposed either on a third plane perpendicular to the first plane and the second plane, or in the vicinity of the third plane. The center of the first sensor is present either on a straight line which passes through the center of the third sensor and is perpendicular to the first plane, or in the vicinity of said straight line, and the center of the second sensor is present in a position displaced from a line joining the center of the third sensor and the center of the first sensor.

Magnetic field measuring element, magnetic field measuring device, and magnetic field measuring system

The invention relates to a liquid nitrogen cooling sensor device container and liquid nitrogen cooling sensor equipment, and effectively reduces low-frequency noise while maintaining the ease with which a probe can be inserted in and removed from liquid nitrogen. Said invention comprises: a liquid nitrogen containing insulating container that contains liquid nitrogen; a sensor fixing member which has a distal end portion to which a sensor operating at a temperature of the liquid nitrogen is attached; and a fixing buffer member which is for fixing the sensor fixing member to the liquid nitrogen containing insulating container, wherein the fixing buffer member exerts a buffering effect in the liquid nitrogen.

Liquid nitrogen cooling sensor device container and liquid nitrogen cooling sensor device

An oxide superconductor includes: a substrate made of a metal; an insulating intermediate layer provided on the substrate; an oxide superconducting layer provided on the intermediate layer; a metal stabilizing layer provided on the oxide superconducting layer; and a plurality of dividing grooves which divide the metal stabilizing layer and the oxide superconducting layer along a longitudinal direction of the substrate, reach the inside of the intermediate layer through the oxide superconducting layer from the metal stabilizing layer, and do not reach the substrate. The metal stabilizing layer and the oxide superconducting layer are divided to form a plurality of filament conductors by the plurality of dividing grooves, and in each dividing groove of the plurality of dividing grooves, a width of a groove opening portion of the dividing groove is equal to or greater than a width of a groove bottom portion of the dividing groove.

Oxide superconductor and method for manufacturing same

A high-temperature superconducting magnetic sensor having superconducting layers formed on a substrate, a superconducting quantum interference device (SQUID) being formed on the superconducting layers, the high-temperature superconducting magnetic sensor includes: a pickup coil that is formed on the superconducting layer and is connected to an inductor of the SQUID; and an input coil that is formed on the superconducting layer, is connected to the inductor of the SQUID and the pickup coil to form a closed loop, and is magnetically coupled with the inductor of the SQUID. In planar view, at least one turn of the input coil surrounds the inductor of the SQUID, or is surrounded by the inductor of the SQUID. The width of the superconductor forming the inductor of the SQUID is 10 &#x3bc;m or less.

High-temperature superconducting magnetic sensor

A high-temperature superconducting magnetic sensor having a superconducting layer formed on a substrate and a plurality of superconducting quantum interference devices fabricated on the superconducting layer, which includes: a plurality of input coils that are formed on the superconducting layer and connected to or magnetically coupled with each of the plurality of the superconducting quantum interference devices; a pickup coil that is formed on the superconducting layer and connected so as to form a closed loop together with the plurality of the input coils; and a plurality of trimming wires that are formed on the superconducting layer and can be cut off, while making a short-circuit between both ends of each of the plurality of the input coils.

High-temperature superconducting magnetic sensor and fabrication method of the same

A superconducting junction element has a lower electrode formed by a superconductor layer, a barrier layer provided on a portion of a surface of the lower electrode, an upper electrode formed by a superconductor and covering the barrier layer, and a superconducting junction formed by the lower electrode, the barrier layer and the upper electrode. A critical current density of the superconducting junction is controlled based on an area of the lower electrode.

Superconducting junction element and superconducting junction circuit

The present invention provides a superconducting device including a substrate, a first superconducting pattern formed on the substrate, an insulating pattern formed on the first superconducting pattern, and a second superconducting pattern formed at the uppermost level in the multilayered superconducting pattern. A barrier layer of a Josephson junction is formed on the lower side of, or within the second superconducting pattern. The second superconducting pattern constitutes a circuit element on the insulating pattern.

Superconducting device and method of manufacturing the same

A Josephson device includes a first superconducting electrode layer, a barrier layer and a second superconducting electrode layer that are successively stacked. The first and second superconducting electrode layers are made of an oxide superconductor material having (RE)(AE)CuOas a main component, where an element RE is at least one element selected from a group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, and an element AE is at least one element selected from a group consisting of Ba, Sr and Ca. The barrier layer is made of a material that includes the element RE, the element AE, Cu and oxygen, where in cations within the material forming the barrier layer, a Cu content is in a range of 35 At. % to 55 At. % and an RE content is in a range of 12 At. % to 30 At. %, and the barrier layer has a composition different from compositions of the first and second superconducting electrode layers.

Josephson device, method of forming Josephson device and superconductor circuit

In a superconducting random access memory according to this invention, drive lines such as a word line and a bit line, and a sense line for accessing a memory cell array are each divided into a plurality of blocks and an in-block signal propagation circuit having a level-logic drive circuit and sense circuit each with high load drive capability is used for signal propagation in each of the blocks. Further, for long-distance signal propagation between the blocks, superconducting passive transmission lines formed by single flux quantum (SFQ) devices and capable of high-speed operation are used. As a result, the high-speed operation as a whole is enabled. It is possible to additionally use splitters or confluence buffers and latch circuits and, further, a binary tree structure may be adopted.

Method of configuring superconducting random access memory, device structure of the same, and superconducting drive circuit

A superconducting circuit includes a first transformer to produce a first alternating-current output at a secondary-side inductor, a second transformer to produce a second alternating-current output at a secondary-side inductor, a first pulse generating circuit to produce a single flux quantum pulse responsive to the first alternating-current output, a second pulse generating circuit to produce a single flux quantum pulse responsive to the second alternating-current output, and a confluence buffer circuit to merge the single flux quantum pulses from the pulse generating circuits, wherein each of the pulse generating circuits includes a superconducting loop including the secondary-side inductor, a first Josephson junction situated in the superconducting loop to generate the single flux quantum pulse, and a second Josephson junction situated in the superconducting loop, a threshold value of the second Josephson junction for an electric current flowing through the secondary-side inductor being different from that of the first Josephson junction.

Superconducting circuit for generating pulse signal

A high-temperature superconductive device is disclosed, including a ramp-edge junction. The ramp-edge junction includes a first electrode layer () that defines the size of the ramp-edge junction and a second electrode layer (). The width of the second electrode layer () is greater than the width of the first electrode layer (). The first electrode layer () and the second electrode layer () touch in part, and are separated via a first insulation layer () in remaining part. Because the ramp-edge junction includes the first electrode layer () and the second electrode layer (), the inductance of the ramp-edge junction can be reduced with the critical current density Jbeing kept at a high level.

High-temperature superconductive device

A first Josephson junction in a Single Flux Quantum circuit (SFQ circuit) and a second Josephson junction in an interface circuit (latch driver circuit) are formed with junction materials different from each other, and the junction materials are selected so that the hysteresis of the first Josephson junction in a current-voltage characteristic is smaller than the hysteresis of the second Josephson junction in a current-voltage characteristic.

Superconducting circuit

A circuit includes a latch circuit including a Josephson junction and configured to perform a latch operation based on a hysteresis characteristic in response to a single flux quantum, a load circuit including load inductance and load resistance and coupled to an output of the latch circuit, and a reset circuit provided between the output of the latch circuit and the load circuit and configured to reset the latch circuit a predetermined time after the latch operation by the latch circuit, wherein the Josephson junction is driven by a direct current.

Superconducting latch driver circuit generating sufficient output voltage and pulse-width

To obtain a superconducting driver circuit which can obtain an output voltage of several millvolts or above, can use a DC power source as a driving power source, can form no capacitance between it and a ground plane, and has a small occupation area, the superconducting driver circuit is constructed by superconducting flux quantum interference devices (SQUIDs) each constructing a closed loop having as components two superconducting junctions and an inductor. The SQUIDs share the inductors and are connected in series in three or more stages.

Superconducting driver circuit

Growing community of inventors

Mito, Japan

Keiichi Tanabe