Kabushiki Kaisha Toshiba

Keiichi Shimada

Takamasa Usui

Hajime Kaneko

A semiconductor device includes a first contact plug, a diametric dimension of an upper end portion thereof greater than the lower end portion thereof; a first insulating film above a substrate and covering the first plug; a second contact plug, a diametric dimension of an upper end portion thereof less than lower end portion thereof, the lower end portion contacting the upper end portion of the first plug; a second insulating film above the first insulating film and the first plug and covering the second plug; a wiring layer including a lower end portion contacting the upper end portion of the second plug; and a third insulating film above the second insulating film and the second plug and covering the wiring layer; wherein the upper end portion of the first plug displaced from the lower end portion of the second plug has a step.

Growing community of inventors

Yokkaichi, Japan

Keiichi Shimada