Sharp Kabushiki Kaisha Corporation

Mitsubishi Chemical Corporation

Keiichi Sawai

Hiroyoshi Higashisaka

Hajime Oda

Katsuji Iguchi

Tsuyoshi Ono

Makoto Ishikawa

Takanobu Matsuo

Takayuki Taniguchi

Masumi Maegawa

Yuta Ikawa

Osamu Jinushi

Akio Shimoyama

Noriyuki Saitou

Yoshihide Suzuki

Yasuhiro Koyama

Masaru Miyoshi

Katsuji Kawakami

Mutsuo Kawasaki

Osamu Miyake

A semiconductor device is provided with a first semiconductor chip and a second semiconductor chip that are arranged so as to oppose each other. The first semiconductor chip has a first connecting portion provided in a first hole portion, and the second semiconductor chip has an electrically conductive second connecting portion that is composed of a concave metal film formed on the front surface of a second electrode portion, the side surface of a second hole portion, and the front surface of a second protective film. The first electrode portion and the second electrode portion are electrically connected via the first connecting portion and the second connecting portion.

Semiconductor device and manufacturing method for semiconductor device

Bonding equipment includes a laminar flow source, a chip handling portion, a cleaning portion for cleaning a chip, a bonding portion for bonding the chip and a substrate, and a transfer mechanism for transferring the chip from the chip handling portion to the bonding portion. Among these, at least the bonding portion and the cleaning portion are disposed in a laminar flow by the laminar flow source.

Bonding equipment

In a light-emitting element module, at least two or more first electrodes of a first substrate that includes a circuit element are joined to at least two or more light-emitting elements. The first substrate includes a first wiring line to an n-th wiring line (n is an integer of 2 or more) that are formed into layers in order from the at least two or more light-emitting elements in a thickness direction of the first substrate. The first wiring line that is located in one of the layers of the first substrate nearest to the at least two or more light-emitting elements is formed at least in an interelectrode region between the adjacent first electrodes of the first substrate in a plan view.

Light-emitting element module

The present invention is a method for mounting, on a ceramic substrate (), an LED chip (), in which an upper surface of a positive electrode () is in a higher position than an upper surface of a negative electrode (). The method includes the steps of: (i) laminating resist () on the negative electrode () and the positive electrode () and forming openings (and) in the resist (); (ii) forming bumps (and) in the respective openings (and); (iii) removing the resist (); and (iv) bonding bumps (and) to the ceramic substrate (). A cross-sectional area of the opening () is larger than a cross-sectional area of the opening ().

Mounting method for semiconductor light emitter using resist with openings of different sizes

A method of manufacturing a semiconductor device can suppress the generation of burrs when an array of integrated circuits to which a supporting member is bonded for assistance is separated into chips. The supporting member having thinned regions (or void regions which are openings in the supporting member) located correspondingly beneath the scribing lines extending between the integrated circuits is bonded by an adhesive to the back side of a semiconductor substrate on which integrated circuits are arrayed at the primary side. Then, a dicing tape is attached to the support member to secure the entire assembly, and the assembly of the integrated circuits, the semiconductor substrate, the adhesive, and the supporting member are cut along the scribing lines, and then the dicing tape is removed.

Semiconductor device and manufacturing method thereof

An etching liquid contains iodine, an iodine compound and alcohol as solute, and solvent such as water. The etching liquid etches a gold or gold alloy layer formed on the surface of a substrate for a semiconductor device or a liquid crystal device evenly. A plurality of gold or gold alloy columns is formed on the layer. The columns are etched scarcely by the etching liquid. The etching liquid etches the gold or gold alloy layer existing between the columns evenly. The etching liquid may further contain a surfactant.

Etching liquid

In a semiconductor chip mounted in a semiconductor device, when an opening portion ( ) is formed in a surface protective film ( ) on a pad ( ), the opening portion ( ) is so formed as to have a plurality of openings ( ), each smaller than a tip diameter of a probe needle ( ) and arranged in a grid pattern or stripe pattern. In this configuration, electrical continuity is achieved between the probe needle ( ) and the pad ( ) through a bump electrode ( ) if the bump electrode is properly formed. Electrical continuity between the probe needle ( ) and the pad ( ) is prevented by the opening ( ) and is not achieved if the bump electrode ( ) is improperly formed.

Semiconductor device having contact opening smaller than test probe, and manufacturing process and inspecting method thereof

Growing community of inventors

Sakai, Japan

Keiichi Sawai