Sanyo Electric Co., Ltd.

Keiichi Sano

Shigeru Noguchi

Hiroshi Iwata

Satoshi Ishida

Yoichiro Aya

Shoichiro Nakayama

Hiroyuki Kuriyama

Yasuki Harata

Koji Nishio

Hitoshi Hirano

Keiichi Kuramoto

Yoichi Domoto

Seiichi Kiyama

Hiroaki Izu

Ikuro Nakane

Akira Terakawa

Kaneo Watanabe

Yasuaki Yamamoto

Hiroshi Hosokawa

Takashi Kuwahara

Takahisa Sakakibara

Norihiro Terada

Masaaki Kameda

An EL device (,) formed from an anode, a cathode, and a light emitting device layer sandwiched between both electrodes, a first TFT (,) of which a drain electrode (,) is connected to a drain signal line D and a gate electrode (,) is connected to a gate signal line G, and a second TFT (,) of which a source electrode is connected to a third TFT (,), a drain electrode is connected to a driving power supply (,-,), and a gate electrode is connected to the source electrode of the first TFT (,), are provided. A third and a fourth TFT (,), which are connected between the second TFT (,) and the EL device (,), for switching in accordance with an external signal of 10 kHz repeatedly charges and discharges a charging capacitor (,-,) between the third and fourth TFTs, the discharge of which supplies a current to the EL device (,). The charging capacitor (,-,) is charged up to a gate voltage V,of the second TFT (,) and a current in accordance with the voltage charged to this charging capacitor (,-,) is supplied to the organic EL device (,) so that the light emission at the organic EL devices can be kept uniform.

Electroluminescence display apparatus

The disclosure relates to a photovoltaic device comprising a transparent electrode, one conductive type amorphous semiconductor, another conductive type crystal semiconductor, an intrinsic amorphous semiconductor, another conductive type amorphous semiconductor and a metal electrode and having a first semiconductor junction composed of the one conductive type amorphous semiconductor and the another conductive type crystal semiconductor, and a second semiconductor junction composed of the another type crystal semiconductor and the another conductive type amorphous semiconductor, wherein the transparent electrode is located on light incident side of the one conductive type amorphous semiconductor, the metal electrode is located on another side, the intrinsic amorphous semiconductor is located between the another conductive type crystal semiconductor and the another conductive type amorphous semiconductor, the first semiconductor junction is located on the light incident side, and the second semiconductor junction is located on the another side. In the device, the crystal semiconductor is composed single-crystalline semiconductor or polycrystalline semiconductor.

Photovoltaic device

A photovoltaic element is produced by forming a plurality of layers of amorphous semiconductor thin films on a substrate, whereby at least one of the plurality of layers contains an impurity that hinders crystallization resulting from thermal annealing, and then thermally annealing the amorphous semiconductor thin films thereby crystallizing the film except for the layer containing the impurity. In the finished photovoltaic element, the resulting crystalline semiconductor film and the non-crystallized, amorphous semiconductor film can form a heterojunction. The amorphous film can be arranged closer to the substrate, i.e. between the crystalline film and the substrate.

Photovoltaic element and method of manufacturing the same

The content of bonding hydrogen in an a - SiGe film is so adjusted that in a case where the content of bonding hydrogen per Si atom in the film is in the range of approximately 8 to 14 at. %, [SiH.sub.2 ]/[Si] and [SiH]/[Si] are respectively in the ranges of approximately 0.5 to 4 at. % and approximately 7 to 10 at. %, and both [SiH.sub.2 ]/[Si] and [SiH]/[Si] increase at approximately equal slops as the content of bonding hydrogen increases.

Amorphous silicon germanium film and semiconductor device using the same

In a photovoltaic device, when an internal electric field in a photoelectric conversion layer becomes non-uniform in the surface direction of the layer for a reason such as the interface between a transparent conductive film and the photoelectric conversion layer being formed in an irregular shape, the internal electric field in the photoelectric conversion layer is made uniform by (1) making the thickness of an intrinsic layer inside the photoelectric conversion layer in portions of the photoelectric conversion layer where the internal electric field becomes weak smaller than that in the other portions, (2) providing regions where conductivity is high and activation energy is low in the photoelectric conversion layer in the said portions, or (3) containing a ferroelectric material in a portion of the intrinsic layer inside the photoelectric conversion layer.

A semiconductive film is formed on a substrate having a surface with indentations defining a plurality of plane regions and elevated step difference portions between adjacent plane regions. The semiconductive film is irradiated with energy beams to be polycrystallized, whereby the positions of the crystal grain boundaries in the polycrystalline semiconductive film are controlled.

Polycrystalline semiconductive film, semiconductor device using the same

A polycrystalline silicon film is prepared by forming an amorphous silicon film containing hydrogen and having an intensity ratio TA/TO of at least 0.5 of TA peak intensity to TO peak intensity in a Raman spectrum, and then heat treating the amorphous silicon film for converting the same to a polycrystalline silicon film. The polycrystalline silicon film has improved characteristics as a photoelectric conversion layer in a photovoltaic device.

Polycrystalline silicon photovoltaic device

A polysilicon thin film obtained by using a heat treatment to crystallize an amorphous silicon thin film formed on a substrate has substantially no grain boundaries present in the direction of its thickness, i.e. substantially no grain boundaries extend across the thickness direction. Such a polysilicon thin film can be prepared by forming a doped first amorphous silicon layer containing dispersed crystal phases on a substrate, forming an undoped second amorphous silicon layer on the first amorphous silicon layer, and crystallizing the first and second amorphous silicon layers by heat treatment.

Polysilicon thin film and method of preparing polysilicon thin film and

The disclosure relates to a semiconductor device comprising silicon having a substrate composed of low grade silicon, a silicon layer whose silicon purity is higher than that of the low grade silicon formed on the substrate and an electrode formed on the silicon layer. In the device, the low grade silicon may be selected from metallurgical grade silicon and silicon whose purity is less than 99.99%, and the silicon layer may be over 99.999% purity or semiconductor grade.

Photovoltaic device having a semiconductor grade silicon layer formed on

Disclosed herein is a method of preparing a polycrystalline silicon film comprising a step of forming an amorphous silicon film containing hydrogen and having an intensity ratio TA/TO of at least 0.5 of TA peak intensity to TO peak intensity in a Raman spectrum, and a step of heat treating the amorphous silicon film for converting the same to a polycrystalline silicon film.

Method of preparing polycrystalline silicon film

The body of a micromachine has a plurality of energy-power converting means for receiving different forms of energy including rays, microwaves and sound waves and converting the different forms of energy to electric power, i.e., photoelectromotive devices, a microwave-power converter and an acousto-electromotive device. The electric power obtained by these means is supplied to a drive system and an operation system incorporated in the machine body.

Micromachines

A photovoltaic device has a transparent substrate, a transparent electrode layer, a photovoltaic layer, and a back electrode which are stacked in this order. The photovoltaic layer has a p-type a-SiC layer provided on the transparent electrode layer, a buffer layer provided on the p-type a-SiC layer, a photosensitive layer provided on the buffer layer, and an n-type semiconductor layer provided on the photosensitive layer. The buffer layer is an a-SiC layer first deposited on the p-type a-SiC layer and then subjected to a plasma treatment. The plasma treatment should be carried out using a gas selected from a group consisting of hydrogen (H.sub.2), Argon (Ar), Helium (He), Neon (Ne), Krypton (Kr), and Xenon (Xe). In the device, the buffer layer may be composed of a microcrystalline SiC layer or an amorphous SiC layer. The buffer layer may have a thickness ranging from about 10 .ANG. to about 100 .ANG., and may be formed by a plasma-CVD process.

Photovoltaic device and manufacturing method therefor

A photovoltaic device includes an i-type amorphous silicon thin film and a p-type amorphous silicon thin film arranged on portions of an n-type crystalline silicon substrate, a collecting electrode arranged on the amorphous silicon thin film, and an insulating layer arranged around the portions where the amorphous silicon thin film is formed. Thus, a pin junction is formed only below the collecting electrode.

A photovoltaic device having a tab soldered onto it for modularization, includes a first conductivity type crystalline semiconductor layer, a collector electrode electrically connected to the tab by soldering, a short-preventing layer formed under a soldered portion of the collector electrode, and a second, opposite conductivity type amorphous semiconductor layer formed above the crystalline semiconductor layer. The short-preventing layer is an insulating layer of SiO.sub.2 or the like, or an opposite conductivity type doped layer formed in the first conductivity type crystalline semiconductor layer.

Photovoltaic device and method of manufacturing the same

A mold of crystalline silicon having a textured surface is placed on an amorphous silicon film so that projecting portions of the textured surface are in contact with a surface of the silicon film. The amorphous silicon film is then heated for crystallizing the same by solid phase epitaxy, thereby forming a crystalline silicon film having a textured surface corresponding to that of the mold.

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Takatsuki, Japan

Keiichi Sano