Hamamatsu-Photonics K.k.

Keiichi Ota

Sadaharu Takimoto

Hiroshi Watanabe

Makoto Kono

Tetsuya Taka

Ryo Takiguchi

A solid-state imaging device according to the disclosure includes a semiconductor substrate which has a main surface having a plurality of photosensitive regions, and an insulating film which is provided on the main surface of the semiconductor substrate. When the main surface of the semiconductor substrate is taken as a reference surface, a thickness of the insulating film from the reference surface is 0.5 μm or more, a surface (a main surface) of the insulating film on the side opposite to the main surface is a surface having flatness, and a plurality of types of bottom surfaces of which depths from the reference surface are different from each other are provided on the main surface of the semiconductor substrate in the photosensitive regions.

Solid-state imaging device

In a linear image sensoraccording to an embodiment of the present invention, a plurality of embedded photodiodes PD(n) of an elongated shape are arrayed. Each of the embedded photodiodes PD(n) comprises a first semiconductor regionof a first conductivity type; a second semiconductor regionformed on the first semiconductor region, having a low concentration of an impurity of a second conductivity type, and having an elongated shape; a third semiconductor regionof the first conductivity type formed on the second semiconductor regionso as to cover a surface of the second semiconductor region; and a fourth semiconductor regionof the second conductivity type for extraction of charge from the second semiconductor region; the fourth semiconductor regioncomprises a plurality of fourth semiconductor regions arranged as separated in a longitudinal direction of the second semiconductor region on the second semiconductor region

Linear image sensor

In an image sensoraccording to an embodiment of the present invention, a plurality of embedded photodiodes PD(m,n) are arrayed. Each of the embedded photodiodes PD(m,n) comprises a first semiconductor regionof a first conductivity type; a second semiconductor regionformed on the first semiconductor regionand having a low concentration of an impurity of a second conductivity type; a third semiconductor regionof the first conductivity type formed on the second semiconductor regionso as to cover a surface of the second semiconductor region; and a fourth semiconductor regionof the second conductivity type for extraction of charge from the second semiconductor region; the fourth semiconductor regioncomprises a plurality of fourth semiconductor regionsarranged as separated, on the second semiconductor region

Growing community of inventors

Hamamatsu, Japan

Keiichi Ota