Panasonic Corporation

Nippon Shokubai Co., Ltd.

Nippon Steel Corporation

Keiichi Nakamoto

Bunji Mizuno

Yuichiro Sasaki

Katsumi Okashita

Hiroyuki Ito

Hisataka Kanada

Kanji Nakao

Tsutomu c/o Nippon Steel Corp Tech Devlp Okada

Takehiko c/o Hokkai Iron & Coke Sato

Kazuyuki c/o Nippon Steel Corp Yawata Shinagawa

Yohzoh c/o The Iron And Steel Inst Hosotani

The emulsion for water-based inks of the present invention comprises an emulsion particle containing a polymer component having a glass transition temperature of 55° C. or more and a polymer component having a glass transition temperature of less than 55° C., and the emulsion particle having an acid value derived from carboxyl groups of 0 to 6. Further, the ink composition for water based inks of the present invention comprises the above-mentioned emulsion for water-based inks.

Emulsion for water-based ink and ink composition for water-based ink containing the same

A resin composition for sealers as well as a resin composition for sealers and a paint composition for sealers that contains the resin composition for sealers are useful for sealers to be used with such inorganic building materials as ceramic-based building materials. The resin emulsion for sealers is a resin emulsion which contains emulsion particles having an inner layer and an outer layer. The inner layer is formed with a polymer which is formulated by means of emulsion polymerization of a monomer component containing styrene and a monomer other than the styrene, and the outer layer is formed with a polymer which is formulated by means of emulsion polymerization of a monomer component containing a carboxyl-group-containing monomer and a monomer other than the carboxyl-group-containing monomer.

Resin emulsion for sealer

First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r' of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature rof the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2&#xd7;r. The radius of curvature r&#x2032; of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature rof the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2&#xd7;r

Method for producing a semiconductor device have fin-shaped semiconductor regions

A semiconductor device includes: a fin-type semiconductor region () formed on a substrate (); a gate insulating film () formed so as to cover an upper surface and both side surfaces of a predetermined portion of the fin-type semiconductor region (); a gate electrode () formed on the gate insulating film (); and an impurity region () formed on both sides of the gate electrode () in the fin-type semiconductor region (). An impurity blocking portion () for blocking the introduction of impurities is provided adjacent both sides of the gate electrode () over an upper surface of the fin-type semiconductor region ().

Semiconductor device

A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resistivity of the second impurity region is substantially equal to or smaller than that of the first impurity region.

Method for producing a semiconductor device by plasma doping a semiconductor region to form an impurity region

A semiconductor device includes: a first semiconductor region formed on a substrate and having an upper surface and a side surface; a first impurity region of a first conductivity type formed in an upper portion of the first semiconductor region; a second impurity region of a first conductivity type formed in a side portion of the first semiconductor region; and a gate insulating film formed so as to cover at least a side surface and an upper corner of a predetermined portion of the first semiconductor region. A radius of curvature r' of an upper corner of a portion of the first semiconductor region located outside the gate insulating film is greater than a radius of curvature r of an upper corner of a portion of the first semiconductor region located under the gate insulating film and is less than or equal to 2r.

Semiconductor device and method for producing the same

A substrate is exposed to a plasma generated from a gas containing an impurity, thereby doping a surface portion of the substrate with the impurity and thus forming an impurity region. A predetermined plasma doping time is used, which is included within a time range over which a deposition rate on the substrate by the plasma is greater than 0 nm/min and less than or equal to 5 nm/min.

Method for manufacturing semiconductor device

A fin-shaped semiconductor region is formed on a substrate, and then the substrate is placed in a chamber. Then, an ignition gas is introduced into a chamber to thereby turn the ignition gas into a plasma, and then a process gas containing an impurity is introduced into the chamber to thereby turn the process gas into a plasma. Then, a bias voltage is applied to the substrate so as to dope the semiconductor region with the impurity after confirming attenuation of an amount of the ignition gas remaining in the chamber.

Method for manufacturing semiconductor device using plasma doping

An amount of leakage of a substrate-cooling gas into a vacuum container is measured by using a flow-rate measuring device so that the flow rate of a diluting gas that is the same as the substrate-cooling gas is controlled by a control device or a plasma doping time is prolonged, in accordance with the amount of leakage.

Plasma doping processing device and method thereof

A plasma of a gas containing an impurity is produced through a discharge in a vacuum chamber, and a plurality of substrates are successively doped with the impurity by using the plasma, wherein a plasma doping condition of a subject substrate is adjusted based on an accumulated discharge time until the subject substrate is placed in the vacuum chamber.

Method for producing semiconductor device and semiconductor producing apparatus

It is an object of the present invention to provide an emulsion which can form a coating excellent in water penetration resistance as well as impregnating adhesion property, its production method, and a structure body using the emulsion. The present invention is directed to an emulsion comprising a hydrophobic resin particle (A) dispersed in a water-based medium as a resin component, wherein 20 to 60% by weight in the entire resin components including the hydrophobic resin particles (A) is a polymer emulsifier (B) and the average particle diameter of the particles contained therein is 50 nm or smaller.

Growing community of inventors

Osaka, Japan

Keiichi Nakamoto