Skyworks Solutions, Inc.

Toshiba Hokuto Electronics Corporation

Nichia Corporation

Keiichi Maki

Rei Goto

Hironori Fukuhara

Gong Bin Tang

Hiroyuki Nakamura

Yosuke Hamaoka

Benjamin Paul Abbott

Takanori Yasuda

Koji Seo

Ousmane I Barry

Michael David Hill

Siarhei Dmitrievich Barsukou

Yuya Hiramatsu

Yumi Torazawa

An acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode disposed over the piezoelectric layer. The interdigital transducer electrode is thicker in a center region of the interdigital transducer electrode than in a gap region of the interdigital transducer electrode to thereby reduce a mass loading of the interdigital transducer electrode in the gap region. The interdigital transducer electrode has a layer of more dense material disposed of a layer of less dense material.

Acoustic wave device with multi-layer interdigital transducer electrode having layer of more dense material over layer of less dense material

An acoustic wave device is disclosed. The acoustic wave device includes a support layer, a ceramic layer positioned over the support layer, a piezoelectric layer positioned over the ceramic layer, and an interdigital transducer electrode positioned over the piezoelectric layer. The support layer has a higher thermal conductivity than the ceramic layer. The ceramic layer can be a polycrystalline spinel layer. The acoustic wave device can be a surface acoustic wave device configured to generate a surface acoustic wave.

Acoustic wave device with multi-layer substrate including ceramic

A packaged surface acoustic wave device is disclosed. the packaged surface acoustic wave device can include a support substrate that includes a conductive via formed therein, a piezoelectric layer over the support substrate, an interdigital transducer electrode over the piezoelectric layer, a roof structure over the interdigital transducer electrode, and a conductive pillar directly over the conductive via. The conductive pillar supports the roof structure and defines at least a portion of a signal pathway between the interdigital transducer electrode and the conductive via.

Packaged multilayer piezoelectric surface acoustic wave device with conductive pillar

A surface acoustic wave device is disclosed. The surface acoustic wave device can include a ceramic substrate, a piezoelectric layer over the ceramic substrate, and an interdigital transducer electrode over the piezoelectric layer. The ceramic substrate can be a polycrystalline spinel substrate. The surface acoustic wave device can also include a temperature compensating layer over the interdigital transducer electrode.

Acoustic wave device with ceramic substrate

A temperature compensated surface acoustic wave device is disclosed. The temperature compensated surface acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The interdigital transducer electrode includes a first layer, a second layer over the first layer, and a buffer layer between the first layer and the second layer. A thermal conductivity of the second layer is greater than a thermal conductivity of the buffer layer. The buffer layer can be a titanium layer. A thickness of the buffer layer can be in a range of 20 nm to 200 nm, or in a range of 5% to 30% of a thickness of the interdigital transducer electrode.

Temperature compensated acoustic wave device with multilayer interdigital transducer electrode including buffer layer

A method of manufacturing a packaged surface acoustic wave filter chip is disclosed. The method can include providing a structure having first interdigital transducer electrodes formed with a first piezoelectric layer, second interdigital transducer electrodes formed with a second piezoelectric layer, and a substrate between the first and second piezoelectric layers. The method can include forming a plurality of through electrodes extending at least partially through a thickness of the structure such that a first set of through electrodes of the plurality of through electrodes are electrically connected to the first interdigital transducer electrodes and a second set of through electrodes of the plurality of through electrodes are electrically isolated from the first interdigital transducer electrodes.

Methods of manufacturing multi-band surface acoustic wave filters

Aspects of this disclosure relate to a filter that includes an acoustic wave device with a multi-layer substrate with heat dissipation. The multi-layer substrate includes a support substrate (e.g., a quartz substrate), a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and a thermally conductive layer configured to dissipate heat associated with the acoustic wave device. The thermally conductive layer is disposed between the support substrate and the piezoelectric layer. The thermally conductive layer has a thickness that is greater than 10 nanometers and less than a thickness of the piezoelectric layer.

Acoustic wave device with multi-layer piezoelectric substrate with heat dissipation

An acoustic wave filter includes a piezoelectric layer. A first acoustic wave device includes a portion of the piezoelectric layer and a first multi-layer interdigital transducer electrode disposed over the first portion of the piezoelectric layer. Additional acoustic wave devices are coupled to the first acoustic wave device, the additional acoustic wave devices including a second portion of the piezoelectric layer and a plurality of multi-layer interdigital transducer electrodes disposed over the second portion of the piezoelectric layer. At least one of the plurality of multi-layer interdigital transducer electrodes includes a layer that is thinner than a corresponding layer of the same material of the first multi-layer interdigital transducer electrode of the first acoustic wave device.

Acoustic wave filter with multiple acoustic wave devices on a subtrate

A surface acoustic wave device has a piezoelectric substrate having a cut angle (e.g., the piezoelectric angle is cut so as to have a crystal orientation) that allows the surface acoustic wave device to operate as a longitudinally leaky surface acoustic wave device that confines the acoustic wave energy within the piezoelectric substrate and that has less propagation attenuation and a higher electromechanical coupling coefficient k.

Multilayer piezoelectric substrate for acoustic wave device

Aspects of this disclosure relate to an acoustic wave device with transverse mode suppression. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a multi-layer mass loading strip. The mass loading strip has a density that is higher than a density of the temperature compensation layer. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. The mass loading strip can include a first layer for adhesion and a second layer for mass loading. The mass loading strip can suppress a transverse mode.

Acoustic wave device with transverse mode suppression

Aspects of this disclosure relate to acoustic wave devices on stacked die. A first die can include first acoustic wave device configured to generate a boundary acoustic wave. A second die can include a second acoustic wave device configured to generate a second boundary acoustic wave, in which the second die is stacked with the first die. The first acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and high acoustic velocity layers on opposing sides of the piezoelectric layer. The high acoustic velocity layers can each have an acoustic velocity that is greater than a velocity of the boundary acoustic wave.

Acoustic wave devices on stacked die

A piezoelectric microelectromechanical system microphone comprises a support substrate, a membrane including a piezoelectric material attached to the support substrate and configured to deform and generate an electrical potential responsive to impingement of sound waves on the membrane, and a compliant anchor including a trench defined in the support substrate about a portion of a perimeter of the membrane to increase sensitivity of the piezoelectric microelectromechanical system microphone.

Anchor silicon dioxide layer for piezoelectric microelectromechanical system microphone

An acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode disposed over the piezoelectric layer. The interdigital transducer electrode is thicker in a center region of the interdigital transducer electrode than in a gap region of the interdigital transducer electrode to thereby reduce a mass loading of the interdigital transducer electrode in the gap region. The interdigital transducer electrode has a layer of less dense material disposed of a layer of more dense material.

Acoustic wave device with multi-layer interdigital transducer electrode

An acoustic wave device, a method of manufacture of the same, and a radio frequency filter including the same. The acoustic wave device comprises a multilayer piezoelectric substrate (MPS) including a layer of piezoelectric material having a lower surface disposed on an upper surface of a layer of a dielectric material having a lower surface disposed on an upper surface of a carrier substrate. An interdigital transducer (IDT) is disposed on the multilayer piezoelectric substrate and includes an active region configured to generate an acoustic wave. First and second high impedance portions are included within the multilayer piezoelectric substrate, the first and second high impedance portions each positioned outside the active region of the interdigital transducer and extending in the direction of propagation of the acoustic wave to be generated by the interdigital transducer. The first and second high impedance portions reduce side leakage and suppress transverse modes.

Multilayer piezoelectric substrate with reduced side leakage and transverse mode suppression

An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer positioned over a substrate. The acoustic wave device can also include an interdigital transducer electrode positioned over the piezoelectric layer. The acoustic wave device can also include a grounding structure positioned over the piezoelectric layer. The acoustic wave device can also include a conductive layer positioned under the substrate such that the substrate is positioned between the conductive layer and the grounding structure. The acoustic wave device can further include an electrical pathway that electrically connects the conductive layer to the grounding structure.

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Suita, Japan

Keiichi Maki